PD - 97002A
Applications
l High frequency DC-DC converters
l Plasma Display Panel
Benefits
l Low Gate-to-Drain Charge to
Reduce\ Switching Losses
l Fully Characterized Capacitance
Including Effective COSS to Simplify
Design, (See App. Note AN1001)
l Fully Characterized Avalanche
Voltage and Current
l Lead-Free
IRFB52N15DPbF
IRFS52N15DPbF
IRFSL52N15DPbF
HEXFET® Power MOSFET
Key Parameters
VDS
VDS (Avalanche) min.
RDS(ON) max @ 10V
TJ max
TO-220AB
IRFB52N15DPbF
150
200
32
175
D2Pak
IRFS52N15DPbF
V
V
m:
°C
TO-262
IRFSL52N15DPbF
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TA = 25°C
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
51*
36*
240
3.8
230*
1.5*
± 30
5.5
-55 to + 175
Units
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient
Typ.
Max.
–––
0.50
–––
–––
0.47*
–––
62
40
Units
°C/W
* RθJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wearout of the die attach medium.
Notes
through
www.irf.com
are on page 11
1
09/22/10
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
150
–––
–––
3.0
–––
–––
–––
–––
Typ.
–––
0.16
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
32
mΩ VGS = 10V, ID = 36A
5.0
V
VDS = VGS, ID = 250µA
25
VDS = 150V, VGS = 0V
µA
250
VDS = 120V, VGS = 0V, TJ = 150°C
100
VGS = 30V
nA
-100
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
19
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
60
18
28
16
47
28
25
2770
590
110
3940
260
550
Max. Units
Conditions
–––
S
VDS = 50V, ID = 36A
89
ID = 36A
27
nC
VDS = 75V
42
VGS = 10V,
–––
VDD = 75V
–––
ID = 36A
ns
–––
R G = 2.5Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 120V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 120V
Avalanche Characteristics
Parameter
EAS
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
VDS (Avalanche)
c
dh
c
Repetitive Avalanche Voltage c
Min.
Typ.
Max.
Units
–––
–––
470
mJ
–––
–––
36
A
–––
450
–––
mJ
200
–––
–––
V
Diode Characteristics
IS
ISM
VSD
trr
Qrr
ton
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
60
––– –––
showing the
A
G
integral reverse
––– ––– 240
S
p-n junction diode.
––– ––– 1.5
V
TJ = 25°C, IS = 36A, VGS = 0V
––– 140 210
nS
TJ = 25°C, IF = 36A
––– 780 1170 nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
www.irf.com
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
1000
1000
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
100
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
5.0V
1
100
10
5.0V
1
300µs PULSE WIDTH
Tj = 175°C
300µs PULSE WIDTH
Tj = 25°C
0.1
0.1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
100
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000.00
3.0
I D = 60A
2.5
T J = 175°C
T J = 25°C
10.00
VDS = 15V
300µs PULSE WIDTH
1.00
5.0
7.0
9.0
11.0
13.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
www.irf.com
15.0
2.0
(Normalized)
100.00
RDS(on) , Drain-to-Source On Resistance
ID, Drain-to-Source Current (Α)
10
VDS, Drain-to-Source Voltage (V)
1.5
1.0
0.5
V GS = 10V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature
100 120 140 160 180
( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance(pF)
10000
Ciss
1000
Coss
100
Crss
12
VGS, Gate-to-Source Voltage (V)
100000
ID = 36A
VDS = 120V
VDS = 75V
10
8
6
4
2
0
10
0
1
10
100
1000
1000
ID , Drain-to-Source Current (A)
1000.00
100.00
10.00
T J = 25°C
1.00
50
60
70
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100µsec
10
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.10
0.1
0.5
40
100
T J = 175°C
0.0
30
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
ISD, Reverse Drain Current (A)
20
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
1.0
1.5
2.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
2.5
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
70
RD
V DS
60
VGS
50
I D , Drain Current (A)
D.U.T.
RG
+
-VDD
10V
40
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
90%
10
0
25
50
75
100
125
TC , Case Temperature
150
( ° C)
175
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
(Z thJC )
1
D = 0.50
0.1
0.20
Thermal Response
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P DM
0.01
t1
t2
Notes:
1. Duty factor D =
2. Peak T
0.001
0.00001
0.0001
0.001
0.01
t1 / t 2
J = P DM x Z thJC
+TC
0.1
1
t 1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
900
15V
ID
15A
26A
36A
TOP
+
V
- DD
IAS
20V
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
D.U.T
RG
720
DRIVER
L
VDS
BOTTOM
540
360
180
0
25
50
75
100
125
Starting Tj, Junction Temperature
150
175
( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
10 V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EXAMPLE: T HIS IS AN IRF1010
LOT CODE 1789
AS S EMBLED ON WW 19, 1997
IN THE AS SEMBLY LINE "C"
Note: "P" inass embly line position
indicates "Lead - Free"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
TO-220 package is not recommended for Surface Mount Application.
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS SEMBLED ON WW 02, 2000
IN T HE AS S EMBLY LINE "L"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
F530S
DAT E CODE
P = DES IGNAT ES LEAD - FREE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS S EMBLY S IT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
9
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
IGBT
1- GATE
TO-262 Part Marking Information
EXAMPLE: T HIS IS AN IRL3103L
LOT CODE 1789
ASS EMBLED ON WW 19, 1997
IN T HE ASSEMBLY LINE "C"
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
DAT E CODE
P = DESIGNAT ES LEAD-F REE
PRODUCT (OPT IONAL)
YEAR 7 = 1997
WEEK 19
A = ASS EMBLY SIT E CODE
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
IRFB52N15DPbF/IRFS52N15DPbF/IRFSL52N15DPbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Notes:
1% Duty cycle, 100 pulses, limited by
Coss eff. is a fixed capacitance that gives the same charging time
max. junction temperature.
as Coss while VDS is rising from 0 to 80% VDSS.
Starting TJ = 25°C, L = 0.72mH
This is only applied to TO-220AB package.
RG = 25Ω, IAS = 36A.
This is applied to D2Pak, when mounted on 1" square PCB
ISD ≤ 36A, di/dt ≤ 400A/µs, VDD ≤ V(BR)DSS,
(FR-4 or G-10 Material ). For recommended footprint and soldering
TJ ≤ 175°C.
techniques refer to application note #AN-994.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/2010
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11
IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
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