StrongIRFET
IRFS7434PbF
IRFSL7434PbF
Applications
l
l
l
l
l
l
l
l
l
HEXFET® Power MOSFET
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
l
l
l
40V
RDS(on) typ.
1.25mΩ
max.
G
1.6mΩ
ID (Package Limited)
c
195A
D
D
S
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
320A
ID (Silicon Limited)
S
Benefits
l
VDSS
D
G
G
D2Pak
IRFS7434PbF
D
S
TO-262
IRFSL7434PbF
G
D
S
Gate
Drain
Source
Ordering Information
Package Type
IRFSL7434PbF
TO-262
IRFS7434PbF
D2Pak
Standard Pack
Form
Tube
Tube
Tape and Reel Left
5
Quantity
50
50
800
Complete Part Number
IRFSL7434PbF
IRFS7434PbF
IRFS7434TRLPbF
350
ID = 100A
T J = 125°C
3
2
1
TJ = 25°C
4
6
8
10
12
14
16
250
200
150
100
50
0
2
Limited By Package
300
4
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m Ω)
Base part number
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com © 2014 International Rectifier
1
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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November 19, 2014
IRFS/SL7434PbF
Absolute Maximum Ratings
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Max.
320
226
195
1270 *
294
1.96
± 20
5.0
-55 to + 175
d
f
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
d
Thermal Resistance
Symbol
490
RθJA
Junction-to-Ambient (PCB Mount) , D2 Pak
l
Typ.
Max.
–––
0.5
–––
40
Min.
Typ.
Max.
Units
V(BR)DSS
ΔV(BR)DSS/ΔTJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
–––
–––
1.6
–––
3.9
1.0
150
100
-100
–––
V
mV/°C
mΩ
mΩ
V
IGSS
2.2
–––
–––
–––
–––
–––
–––
32
1.25
1.8
3.0
–––
–––
–––
–––
2.1
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 195A by source
bonding technology . Note that current limitations arising from
heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.099mH
RG = 50Ω, IAS = 100A, VGS =10V.
ISD ≤ 100A, di/dt ≤ 1307A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
2
A
See Fig. 14, 15 , 22a, 22b
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
RG
mJ
1098
Parameter
j
W
W/°C
V
V/ns
°C
d
Junction-to-Case
A
300
e
k
RθJC
Units
c
c
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μA
nA
mJ
Units
°C/W
Conditions
VGS = 0V, ID = 250μA
Reference to 25°C, ID = 5mA
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 250μA
VDS = 40V, VGS = 0V
VDS = 40V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
g
g
d
Ω
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
Rθ is measured at TJ approximately 90°C.
Limited by TJmax starting TJ = 25°C, L= 1mH, RG = 50Ω, IAS = 47A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material).
∗
Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Pulse drain current is limited at 780A by source bonding technology.
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IRFS/SL7434PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Min.
211
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
216
51
77
139
24
68
115
68
10820
1540
1140
1880
2208
Max.
–––
324
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
S
Min.
Typ.
Max.
Units
nC
ns
Conditions
VDS = 10V, ID = 100A
ID = 100A
VDS =20V
VGS = 10V
ID = 100A, VDS =0V, VGS = 10V
VDD = 20V
ID = 30A
RG = 2.7Ω
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0 MHz, See Fig. 5
VGS = 0V, VDS = 0V to 32V , See Fig. 12
VGS = 0V, VDS = 0V to 32V
g
g
pF
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode)
VSD
d
Diode Forward Voltage
f
dv/dt
Peak Diode Recovery
trr
Reverse Recovery Time
Reverse Recovery Charge
Q rr
IRRM
Reverse Recovery Current
3
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–––
–––
c
320
A
–––
–––
1270*
–––
0.9
1.3
V
V/ns
–––
5.0
–––
–––
38
–––
–––
37
–––
–––
50
–––
–––
50
–––
–––
1.9
–––
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
ns
nC
A
TJ = 25°C, IS = 100A, VGS = 0V
g
S
TJ = 175°C, IS = 100A, VDS = 40V
TJ = 25°C
VR = 34V,
TJ = 125°C
IF = 100A
TJ = 25°C
di/dt = 100A/μs
g
TJ = 125°C
TJ = 25°C
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IRFS/SL7434PbF
1000
1000
100
BOTTOM
TOP
100
10
1
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
≤60μs PULSE WIDTH
BOTTOM
4.5V
10
≤60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
0.1
1
10
0.1
100
1
Fig 3. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
Fig 4. Typical Output Characteristics
1000
T J = 175°C
100
10
TJ = 25°C
1
VDS = 10V
≤60μs PULSE WIDTH
0.1
2
4
6
8
ID = 100A
1.8
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
10
-60
VGS, Gate-to-Source Voltage (V)
C oss = C ds + C gd
Ciss
10000
Crss
60
100
140
180
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
100000
20
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
1000000
-20
T J , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
10
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Coss
1000
ID= 100A
12.0
VDS= 32V
VDS= 20V
10.0
8.0
6.0
4.0
2.0
0.0
100
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
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0
50
100
150
200
250
300
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFS/SL7434PbF
1000
10000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 175°C
100
T J = 25°C
10
1
1000
100μsec
1msec
100
Limited By Package
10msec
10
1
VGS = 0V
0.1
0.1
0.0
0.5
1.0
1.5
2.0
0.1
2.5
1
10
100
VDS, Drain-to-Source Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
1.6
50
Id = 5.0mA
49
VDS= 0V to 32V
1.4
48
1.2
47
Energy (μJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
DC
Tc = 25°C
Tj = 175°C
Single Pulse
46
45
44
43
1.0
0.8
0.6
0.4
42
0.2
41
0.0
40
-60
-20
20
60
100
140
0
180
T J , Temperature ( °C )
10
15
20
25
30
35
40
45
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( mΩ)
5
Fig 12. Typical COSS Stored Energy
20.0
VGS = 5.5V
15.0
VGS = 6.0V
10.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
5.0
0.0
0
100
200
300
400
500
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFS/SL7434PbF
Thermal Response ( Z thJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Avalanche Current vs.Pulse width
EAR , Avalanche Energy (mJ)
600
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a, 22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 100A
500
400
300
200
100
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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IRFS/SL7434PbF
10
IF = 60A
V R = 34V
8
3.5
IRRM (A)
VGS(th) , Gate threshold Voltage (V)
4.5
2.5
ID = 250μA
ID = 1.0mA
ID = 1.0A
1.5
TJ = 25°C
TJ = 125°C
6
4
2
0
0.5
-75
-25
25
75
125
175
0
225
200
600
800
1000
diF /dt (A/μs)
T J , Temperature ( °C )
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
10
240
IF = 100A
V R = 34V
8
IF = 60A
V R = 34V
220
200
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
180
6
QRR (nC)
IRRM (A)
400
4
160
140
120
100
2
80
60
0
40
0
200
400
600
800
1000
0
200
diF /dt (A/μs)
400
600
800
1000
diF /dt (A/μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
200
IF = 100A
V R = 34V
QRR (nC)
160
TJ = 25°C
TJ = 125°C
120
80
40
0
0
200
400
600
800
1000
diF /dt (A/μs)
7
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRFS/SL7434PbF
Driver Gate Drive
D.U.T
-
-
-
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
P.W.
Period
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
D=
Period
P.W.
+
V DD
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor
InductorCurrent
Curent
ISD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
DRIVER
L
VDS
tp
D.U.T
RG
20V
VGS
+
V
- DD
IAS
A
0.01Ω
tp
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
V DS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
V GS
D.U.T.
RG
+
- V DD
V10V
GS
10%
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
td(on)
Fig 23a. Switching Time Test Circuit
tr
t d(off)
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
12V
tf
.2μF
.3μF
D.U.T.
+
V
- DS
Vgs(th)
VGS
3mA
IG
ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
8
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Qgs1 Qgs2
Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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IRFS/SL7434PbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
T HIS IS AN IR F 530S WIT H
L OT CODE 8024
AS S E MB LE D ON WW 02, 2000
IN T HE AS S E MB LY LINE "L"
INT E RNAT IONAL
R E CT IF IE R
L OGO
PAR T NU MB E R
F 530S
DAT E CODE
YE AR 0 = 2000
WE E K 02
LINE L
AS S E MB L Y
L OT CODE
OR
INT E RNAT IONAL
R E CT IF IE R
L OGO
AS S E MB LY
LOT CODE
P AR T NU MB E R
F 530S
DAT E CODE
P = DE S IGNAT E S L E AD - F RE E
PR ODU CT (OPT IONAL)
YE AR 0 = 2000
WE E K 02
A = AS S E MB LY S IT E CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFS/SL7434PbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E XAMP L E :
T H IS IS AN IR L 3103L
L OT CODE 1789
AS S E MB L E D ON WW 19, 1997
IN T H E AS S E MB L Y L IN E "C"
P AR T N U MB E R
INT E R NAT ION AL
R E CT IF IE R
L OGO
DAT E CODE
YE AR 7 = 1997
WE E K 19
L INE C
AS S E MB L Y
L OT CODE
OR
INT E R N AT IONAL
R E CT IF IE R
L OGO
AS S E MB L Y
L OT CODE
P AR T N U MB E R
DAT E CODE
P = D E S IGN AT E S L E AD -F R E E
PR ODU CT (OPT ION AL )
YE AR 7 = 1997
WE E K 19
A = AS S E MB L Y S IT E COD E
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFS/SL7434PbF
D2Pak (TO-263AB) Tape & Reel Information Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
11
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IRFS/SL7434PbF
Qualification information†
Industrial
(per JEDEC JESD47F )††
Qualification level
MS L1
2
Moisture Sensitivity Level
D Pak
N/A
TO-262
RoHS compliant
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
11/19/2014
• Updated EAS (L =1mH) = 1098mJ on page 2
• Updated note 9 “Limited by TJmax , starting TJ = 25°C, L = 1mH, RG = 50Ω, IAS = 47A, VGS =10V”. on page 2
• Updated package outline on page 9 and 10.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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