StrongIRFET™
IRFS7734-7PPbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
VDSS
75V
RDS(on) typ.
2.6m
max
3.05m
D
G
S
ID
197A
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
Package Type
IRFS7734-7PPbF
D2Pak-7PIN
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Complete Part Number
IRFS7734-7PPbF
IRFS7734TRL7PP
ID = 100A
10
8
6
TJ = 125°C
4
150
100
50
TJ = 25°C
2
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
S
Source
200
12
ID , Drain Current (A)
( )
RDS(on), Drain-to -Source On Resistance m
Base Part Number
D
Drain
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0
25
50
75
100
125
150
175
TC , CaseTemperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFS7734-7PPbF
Absolute Maximium Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
Repetitive Avalanche Energy
EAR
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Junction-to-Ambient
RJA
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
IDSS
Gate Threshold Voltage
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
RG
Max.
197
139
600
294
2.0
± 20
Typ. Max.
––– –––
53
–––
2.6 3.05
3.1
–––
–––
3.7
–––
1.0
––– 150
––– 100
––– -100
2.0
–––
A
W
W/°C
V
-55 to + 175
°C
300
350
670
mJ
See Fig 14, 15, 23a, 23b
A
mJ
Typ.
–––
–––
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Units
Units
V
mV/°C
m
m
V
µA
nA
Max.
0.51
40
Units
°C/W
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 100A
VGS = 6.0V, ID = 50A
VDS = VGS, ID = 250µA
VDS = 75 V, VGS = 0V
VDS = 75V,VGS = 0V,TJ =125°C
VGS = 20V
VGS = -20V
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.07mH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1314A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C..
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V.
2
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IRFS7734-7PPbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Min.
182
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
S VDS = 10V, ID =100A
180 270
ID = 100A
45
–––
VDS = 38V
nC
54
–––
VGS = 10V
126 –––
17
–––
VDD = 38V
ID = 100A
85
–––
ns
123 –––
RG= 2.7
VGS = 10V
75
–––
td(off)
Turn-Off Delay Time
–––
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
––– 10130 –––
––– 820 –––
––– 506 –––
Coss eff.(ER)
Effective Output Capacitance (Energy Related)
–––
715
–––
VGS = 0V, VDS = 0V to 60V
Coss eff.(TR)
Output Capacitance (Time Related)
–––
935
–––
VGS = 0V, VDS = 0V to 60V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ. Max. Units
–––
–––
197
–––
–––
600
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
4.8
46
51
73
95
2.7
–––
–––
–––
–––
–––
–––
VGS = 0V
VDS = 25V
pF ƒ = 1.0MHz
Diode Characteristics
Symbol
IS
ISM
3
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A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
G
S
TJ = 25°C,IS = 100A,VGS = 0V
V/ns TJ = 175°C,IS =100A,VDS = 75V
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 100A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
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IRFS7734-7PPbF
1000
1000
100
BOTTOM
10
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
7.0V
6.0V
5.5V
5.0V
4.5V
4.0V
4.0V
1
BOTTOM
100
4.0V
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
0.1
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
1000
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.5
VDS = 25V
60µs PULSE WIDTH
100
TJ = 175°C
10
TJ = 25°C
1
0.1
2.0
3.0
4.0
5.0
ID = 100A
VGS = 10V
2.0
1.5
1.0
0.5
6.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
100000
Fig 6. Normalized On-Resistance vs. Temperature
VGS, Gate-to-Source Voltage (V)
C oss = C ds + C gd
Ciss
Coss
1000
20 40 60 80 100 120 140 160 180
14
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
10000
0
TJ , Junction Temperature (°C)
Fig 5. Typical Transfer Characteristics
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
Crss
ID= 100A
12
VDS= 60V
VDS= 38V
VDS= 15V
10
8
6
4
2
0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs.
4
1
VDS, Drain-to-Source Voltage (V)
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0
50
100
150
200
250
QG Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFS7734-7PPbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
100
TJ = 175°C
TJ = 25°C
10
1
1msec
100
10msec
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.4
1
10
100
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
2.0
100
Id = 1.0mA
1.5
90
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
100µsec
1.0
80
0.5
0.0
70
0
-60 -40 -20 0 20 40 60 80 100120140160180
40
60
80
VDS, Drain-to-Source Voltage (V)
TJ , Temperature ( °C )
Fig 12. Typical Coss Stored Energy
Fig 11. Drain-to-Source Breakdown Voltage
( )
RDS(on), Drain-to -Source On Resistance m
20
4.5
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
4.0
VGS = 8.0V
VGS = 10V
3.5
3.0
2.5
0
50
100
150
200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFS7734-7PPbF
Thermal Response ( ZthJC ) °C/W
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
100
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAS, Single Pulse Avalanche Energy (mJ)
1400
ID
TOP
18A
35A
BOTTOM 100A
1200
1000
800
600
400
200
0
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRFS7734-7PPbF
20
IF = 60A
VR = 64V
3.5
TJ = 25°C
TJ = 125°C
15
3.0
IRRM (A)
VGS(th) Gate threshold Voltage (V)
4.0
ID = 250µA
ID = 1.0mA
ID = 1.0A
2.5
2.0
10
5
1.5
1.0
0
-75 -50 -25
0
25
50
75
100 125 150 175
0
200
TJ , Temperature ( °C )
600
800
1000
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
20
500
IF = 100A
VR = 64V
IF = 60A
VR = 64V
400
TJ = 25°C
TJ = 125°C
QRR (nC)
15
IRRM (A)
400
10
TJ = 25°C
TJ = 125°C
300
200
5
100
0
0
0
200
400
600
800
1000
0
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
500
IF = 100A
VR = 64V
QRR (nC)
400
TJ = 25°C
TJ = 125°C
300
200
100
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFS7734-7PPbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
I AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFS7734-7PPbF
D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches))
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFS7734-7PPbF
D2Pak-7Pin Part Marking Information
D2Pak-7Pin Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFS7734-7PPbF
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
Moisture Sensitivity Level
MSL1
(per JEDEC J-STD-020D††)
D2Pak-7Pin
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
Revision History
Date
Comment
03/05/2015
Updated EAS (L =1mH) = 670mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V” on page 2
Updated package outline on page 9 .
04/07/2015
Updated typo on Crss from “75pF” to “506pF” on page 3 .
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
