StrongIRFET™
IRFS7762PbF
IRFSL7762PbF
HEXFET® Power MOSFET
Application
Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC inverters
VDSS
75V
RDS(on) typ.
5.6m
max
6.7m
D
G
S
ID
D
D
Benefits
Improved gate, avalanche and dynamic dV/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dV/dt and dI/dt capability
Lead-free, RoHS compliant
S
G
G
IRFSL7762PbF
TO-262
IRFS7762PbF
D2-Pak
Tube
Tube
Tape and Reel Left
18
S
Source
Orderable Part Number
50
50
800
IRFSL7762PbF
IRFS7762PbF
IRFS7762TRLPbF
100
ID = 51A
16
80
14
T J = 125°C
12
10
8
T J = 25°C
6
60
40
20
4
0
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
D
Drain
Standard Pack
Form
Quantity
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m )
Package Type
S
D
TO-262
IRFSL7762PbF
D2Pak
IRFS7762PbF
G
Gate
Base part number
85A
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25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFS/SL7762PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
Parameter
Max.
Continuous Drain Current, VGS @ 10V
85
Continuous Drain Current, VGS @ 10V
60
Pulsed Drain Current
335
Maximum Power Dissipation
140
Linear Derating Factor
0.95
VGS
Gate-to-Source Voltage
± 20
TJ
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Avalanche Characteristics
Symbol
Max.
Parameter
EAS (Thermally limited)
160
Single Pulse Avalanche Energy
EAS (Thermally limited)
243
Single Pulse Avalanche Energy
IAR
Avalanche Current
See Fig 15, 16, 23a, 23b
Repetitive Avalanche Energy
EAR
Thermal Resistance
Symbol
Parameter
Typ.
Max.
Junction-to-Case
RJC
–––
1.05
Junction-to-Ambient (PCB Mount)
RJA
–––
40
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Units
A
W
W/°C
V
°C
Units
mJ
A
mJ
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
58
––– mV/°C Reference to 25°C, ID = 1mA
5.6
6.7
VGS = 10V, ID = 51A
m
6.6
–––
VGS = 6.0V, ID = 26A
–––
3.7
V
VDS = VGS, ID = 100µA
–––
1.0
VDS = 75V, VGS = 0V
µA
––– 150
VDS = 75V,VGS = 0V,TJ = 125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
2.5
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 120µH, RG = 50, IAS = 51A, VGS =10V.
ISD 51A, di/dt 735A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRFS/SL7762PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min.
Typ.
Max. Units
Conditions
VDS = 10V, ID = 51A
ID = 51A
VDS = 38V
nC
VGS = 10V
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg – Qgd)
Turn-On Delay Time
Rise Time
180
–––
–––
–––
–––
–––
–––
–––
85
21
26
60
11
49
–––
130
–––
–––
–––
–––
–––
td(off)
Turn-Off Delay Time
–––
57
–––
–––
–––
–––
–––
40
4440
370
230
–––
–––
–––
–––
–––
330
–––
VGS = 0V, VDS = 0V to 60V
–––
430
–––
VGS = 0V, VDS = 0V to 60V
Min.
Typ.
Max. Units
–––
–––
85
–––
–––
335
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
Coss eff.(ER)
(Energy Related)
Coss eff.(TR)
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Continuous Source Current
IS
(Body Diode)
Pulsed Source Current
ISM
(Body Diode)
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
13
34
46
54
69
2.7
–––
–––
–––
–––
–––
–––
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© 2015 International Rectifier
ns
pF
A
VSD
3
S
V
VDD = 38V
ID = 51A
RG= 2.7
VGS = 10V
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
D
G
S
TJ = 25°C,IS = 51A,VGS = 0V
V/ns TJ = 175°C,IS = 51A,VDS = 75V
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 51A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
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IRFS/SL7762PbF
1000
1000
100
BOTTOM
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
100
4.5V
60µs PULSE WIDTH
BOTTOM
4.5V
10
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
0.1
100
Fig 3. Typical Output Characteristics
100
3.0
100
TJ = 175°C
10
TJ = 25°C
1
V DS = 25V
60µs PULSE WIDTH
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 4. Typical Output Characteristics
1000
0.1
ID = 51A
V GS = 10V
2.5
2.0
1.5
1.0
0.5
2.0
3.0
4.0
5.0
6.0
7.0
-60 -40 -20 0 20 40 60 80 100120140160180
V GS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 5. Typical Transfer Characteristics
100000
V GS, Gate-to-Source Voltage (V)
ID= 51A
10000
Ciss
Coss
1000
Fig 6. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
Ciss = C gs + Cgd, C ds SHORTED
Crss = C gd
Coss = Cds + Cgd
C, Capacitance (pF)
1
V DS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Crss
100
12.0
V DS= 60V
V DS= 38V
10.0
V DS= 15V
8.0
6.0
4.0
2.0
0.0
1
10
100
0
20
40
60
80
100
V DS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
4
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February 19, 2015
IRFS/SL7762PbF
100
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
1000
TJ = 175°C
TJ = 25°C
10
OPERATION
IN THIS
AREA
LIMITED BY
RDS(on)
10
Tc = 25°C
Tj = 175°C
Single Pulse
DC
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
V SD, Source-to-Drain Voltage (V)
10
VDS, Drain-toSource Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.9
95
Id = 1.0mA
0.8
0.7
90
0.6
Energy (µJ)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
100µsec
10msec
1
V GS = 0V
1.0
1msec
100
85
0.5
0.4
0.3
80
0.2
0.1
0.0
75
-10
-60 -40 -20 0 20 40 60 80 100120140160180
T J , Temperature ( °C )
0
10
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
RDS(on), Drain-to -Source On Resistance ( m)
18.0
16.0
14.0
Vgs = 5.5V
Vgs = 6.0V
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
12.0
10.0
8.0
6.0
4.0
0
20 40 60 80 100 120 140 160 180 200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFS/SL7762PbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Avalanche Current (A)
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart = 25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
EAR , Avalanche Energy (mJ)
200
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 51A
160
120
80
40
0
25
50
75
100
125
150
175
Starting T J , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRFS/SL7762PbF
20
IF = 34A
V R = 64V
TJ = 25°C
3.5
15
3.0
TJ = 125°C
2.5
2.0
ID = 100µA
ID = 250µA
1.5
ID = 1.0mA
ID = 1.0A
IRRM (A)
V GS(th) , Gate threshold Voltage (V)
4.0
10
5
1.0
0.5
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
400
600
800
1000
diF /dt (A/µs)
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
400
20
IF = 34A
V R = 64V
TJ = 25°C
IF = 51A
V R = 64V
TJ = 25°C
TJ = 125°C
300
TJ = 125°C
QRR (nC)
15
IRRM (A)
200
TJ , Temperature ( °C )
10
200
5
100
0
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
QRR (nC)
300
250
IF = 51A
V R = 64V
TJ = 25°C
200
TJ = 125°C
150
100
50
0
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFS/SL7762PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
0.01
I AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFS/SL7762PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THISIS AN IRL3103L
LOTCODE1789
ASSEMBLED ON WW19, 1997
IN THEASSEMBLYLINE"C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOTCODE
PARTNUMBER
DATECODE
YEAR7 = 1997
WEEK 19
LINEC
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOTCODE
PARTNUMBER
DATECODE
P= DESIGNATES LEAD-FREE
PRODUCT(OPTIONAL)
YEAR7 = 1997
WEEK 19
A = ASSEMBLYSITECODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFS/SL7762PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFS/SL7762PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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© 2015 International Rectifier
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IRFS/SL7762PbF
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
Moisture Sensitivity Level
D2Pak
MSL1
TO-262
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
2/19/2015
Comments
Updated EAS (L =1mH) = 243mJ on page 2
Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 22A, VGS =10V” on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
