StrongIRFET™
IRFB7787PbF
IRFS7787PbF
IRFSL7787PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
D
VDSS
75V
RDS(on) typ.
6.9m
max
8.4m
G
S
ID
76A
D
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
S
D
G
S
G
TO-220AB
IRFB7787PbF
D2Pak
IRFS7787PbF
G
Gate
Package Type
IRFB7787PbF
IRFSL7787PbF
TO-220
TO-262
IRFS7787PbF
D2-Pak
40
S
Source
Orderable Part Number
IRFB7787PbF
IRFSL7787PbF
IRFS7787PbF
IRFS7787TRLPbF
80
ID = 46A
30
20
TJ = 125°C
10
60
40
20
TJ = 25°C
0
4
8
12
16
20
VGS, Gate-to-Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
S
D
TO-262
IRFSL7787PbF
D
Drain
Standard Pack
Form
Quantity
Tube
50
Tube
50
Tube
50
Tape and Reel Left
800
ID , Drain Current (A)
RDS(on), Drain-to -Source On Resistance ( m)
Base part number
G
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0
25
50
75
100
125
150
175
TC , CaseTemperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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April 22, 2015
IRFB/S/SL7787PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Case-to-Sink, Flat Greased Surface
RCS
Junction-to-Ambient
RJA
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Max.
76
54
280
125
0.83
± 20
A
W
W/°C
V
-55 to + 175
°C
300
10 lbf·in (1.1 N·m)
144
209
mJ
See Fig 15, 16, 23a, 23b
A
mJ
Typ.
–––
0.50
–––
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Units
Max.
1.2
–––
62
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
0.06 ––– V/°C Reference to 25°C, ID = 1mA
6.9
8.4
m VGS = 10V, ID = 46A
8.2
–––
VGS = 6.0V, ID = 23A
–––
3.7
V VDS = VGS, ID = 100µA
–––
1.0
VDS = 75 V, VGS = 0V
µA
––– 150
VDS = 75V,VGS = 0V,TJ =125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
2.1
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.138mH, RG = 50, IAS = 46A, VGS =10V.
ISD 46A, di/dt 425A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as C oss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques
refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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IRFB/S/SL7787PbF
Dynamic Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
154
–––
–––
–––
–––
–––
–––
Typ.
–––
73
18
23
50
11
48
td(off)
Turn-Off Delay Time
–––
51
Max. Units
Conditions
–––
S VDS = 10V, ID =46A
109
ID = 46A
–––
VDS = 38V
nC
–––
VGS = 10V
–––
–––
VDD = 38V
–––
ID = 46A
ns
–––
RG= 2.7
tf
Fall Time
–––
39
–––
VGS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
4020
330
205
–––
–––
–––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
–––
295
–––
VGS = 0V, VDS = 0V to 60V
–––
380
–––
VGS = 0V, VDS = 0V to 60V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
76
–––
–––
280
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
10
33
39
42
61
2.2
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
pF
Diode Characteristics
Symbol
IS
ISM
3
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© 2015 International Rectifier
A
V
D
G
S
TJ = 25°C,IS = 46A,VGS = 0V
V/ns TJ = 175°C,IS =46A,VDS = 75V
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 46A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
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IRFB/S/SL7787PbF
1000
1000
100
BOTTOM
10
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
100
BOTTOM
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
4.5V
10
60µs PULSE WIDTH
Tj = 175°C
60µs PULSE WIDTH
Tj = 25°C
1
1
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
100
2.5
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
ID = 46A
VGS = 10V
2.0
1.5
1.0
0.5
7.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
100000
0
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 5. Typical Transfer Characteristics
Fig 6. Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = Cgs + C gd , Cds SHORT ED
C rss = Cgd
C oss = C ds + C gd
C, Capacitance (pF)
10
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
10000
Ciss
1000
Coss
Crss
ID= 46A
12
VDS= 60V
VDS= 38V
VDS= 15V
10
8
6
4
2
0
100
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
1
VDS, Drain-to-Source Voltage (V)
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0
20
40
60
80
100
QG Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFB/S/SL7787PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100µsec
100
TJ = 175°C
10
TJ = 25°C
1
100
1msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
V GS = 0V
DC
0.1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1.6
1
10
VDS, Drain-toSource Voltage (V)
V SD, Source-to-Drain Voltage (V)
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
95
0.8
Id = 1.0mA
0.6
90
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
10msec
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
85
0.4
80
0.2
75
0.0
0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
TJ , Temperature ( °C )
Fig 11. Drain-to-Source Breakdown Voltage
RDS(on), Drain-to -Source On Resistance ( m)
10
Fig 12. Typical Coss Stored Energy
30.0
VGS = 5.5V
VGS = 6.0V
25.0
VGS = 7.0V
VGS = 8.0V
VGS = 10V
20.0
15.0
10.0
5.0
0
40
80
120
160
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFB/S/SL7787PbF
Thermal Response ( ZthJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C. (Single Pulse)
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
160
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 46A
EAR , Avalanche Energy (mJ)
140
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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© 2015 International Rectifier
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asT jmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed T jmax
(assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRFB/S/SL7787PbF
16
4.0
IF = 30A
VR = 64V
VGS(th) Gate threshold Voltage (V)
3.5
TJ = 25°C
TJ = 125°C
12
IRRM (A)
3.0
ID = 100µA
ID = 250µA
2.5
ID = 1.0mA
ID = 1.0A
2.0
8
4
1.5
1.0
0
-75
-50
-25
0
25
50
75
100 125 150 175
0
200
TJ , Temperature ( °C )
600
800
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
250
16
IF = 46A
VR = 64V
IF = 30A
VR = 64V
200
TJ = 25°C
TJ = 125°C
QRR (nC)
12
IRRM (A)
400
di F /dt ( A/µs)
8
4
TJ = 25°C
TJ = 125°C
150
100
50
0
0
0
200
400
600
0
800
200
400
600
800
di F /dt ( A/µs)
di F /dt ( A/µs)
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
250
IF = 46A
VR = 64V
QRR (nC)
200
TJ = 25°C
TJ = 125°C
150
100
50
0
0
200
400
600
800
di F /dt ( A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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IRFB/S/SL7787PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V (B R )D S S
tp
15V
D R IV E R
L
VDS
D .U .T
RG
IA S
+
VD D
-
A
20V
tp
IAS
0 .0 1
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
V g s (th )
Q gs1 Q gs2
Fig 25a. Gate Charge Test Circuit
8
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© 2015 International Rectifier
Q gd
Q godr
Fig 25b. Gate Charge Waveform
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IRFB/S/SL7787PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART N UM BER
D ATE C O D E
YEAR 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFB/S/SL7787PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EXAMPLE: THIS IS AN IRL3103L
LOT CODE 1789
ASSEMBLED ON WW19, 1997
IN THE ASSEMBLYLINE "C"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
WEEK 19
A = ASSEMBLYSITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFB/S/SL7787PbF
D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))
D2Pak (TO-263AB) Part Marking Information
THIS IS AN IRF530S WITH
LOT CODE 8024
ASSEMBLED ON WW 02, 2000
IN THE ASSEMBLY LINE "L"
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
YEAR 0 = 2000
WEEK 02
LINE L
OR
INTERNATIONAL
RECTIFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
F530S
DATE CODE
P = DESIGNATES LEAD - FREE
PRODUCT (OPTIONAL)
YEAR 0 = 2000
WEEK 02
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRFB/S/SL7787PbF
D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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IRFB/S/SL7787PbF
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
Moisture Sensitivity Level
TO-220
N/A
2
D Pak
MSL1
TO-262
(per JEDEC J-STD-020D††)
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
03/05/2015
04/21/15
Comment
Updated EAS (L =1mH) = 209mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 20A, VGS =10V” on page 2
Updated package outline on page 9,10,11.
Updated Vsd curve Fig 9 on page 5
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
13
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.