IRFSL23N20D

PD- 93904A IRFB23N20D IRFS23N20D IRFSL23N20D SMPS MOSFET HEXFET® Power MOSFET Applications High frequency DC-DC converters l Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS 200V TO-220AB IRFB23N20D RDS(on) max ID 0.10Ω 24A D2Pak IRFS23N20D TO-262 IRFSL23N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 24 17 96 3.8 170 1.1 ± 30 3.3 -55 to + 175 Units A W W/°C V V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Typical SMPS Topologies l Telecom 48V input Forward Converter Notes  through … www.irf.com are on page 11 1 4/26/00 IRFB/IRFS/IRFSL23N20D Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Typ. ––– 0.26 ––– ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, I D = 1mA † 0.10 Ω VGS = 10V, ID = 14A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 13 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 57 14 27 14 32 26 16 1960 300 65 2200 120 220 Max. Units Conditions ––– S VDS = 50V, ID = 14A 86 ID = 14A 21 nC VDS = 160V 40 VGS = 10V, „† ––– VDD = 100V ––– ID = 14A ns ––– RG = 4.6Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz† ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Avalanche Characteristics Parameter EAS IAR EAR Typ. Max. Units ––– ––– ––– 250 14 17 mJ A mJ Parameter Typ. Max. Units Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ ––– 0.50 ––– ––– 0.90 ––– 62 40 Single Pulse Avalanche Energy‚† Avalanche Current Repetitive Avalanche Energy Thermal Resistance RθJC RθCS RθJA RθJA °C/W Diode Characteristics IS ISM VSD trr Q rr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 24 ––– ––– showing the A G integral reverse ––– ––– 96 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 14A, VGS = 0V „ ––– 200 300 ns TJ = 25°C, IF = 14A ––– 1300 1940 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB/IRFS/IRFSL23N20D 100 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 10 1 5.0V 0.1 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 10 5.0V 100 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 ° C 10 TJ = 25 ° C 1 V DS = 50V 20µs PULSE WIDTH 8.0 9.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 100 Fig 2. Typical Output Characteristics 100 7.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 6.0 20µs PULSE WIDTH TJ = 175 °C 1 0.1 VDS , Drain-to-Source Voltage (V) 0.1 5.0 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP TOP 10.0 ID = 24A 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFB/IRFS/IRFSL23N20D VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 10000 Ciss 1000 Coss 100 Crss VGS , Gate-to-Source Voltage (V) 20 100000 10 100 VDS = 160V VDS = 100V VDS = 40V 16 12 8 4 10 1 ID = 14A FOR TEST CIRCUIT SEE FIGURE 13 0 1000 0 20 VDS , Drain-to-Source Voltage (V) 100 80 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 175 ° C I D , Drain Current (A) ISD , Reverse Drain Current (A) 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 10 TJ = 25 ° C 1 100 10us 100us 10 1ms 0.1 0.2 V GS = 0 V 0.5 0.8 1.1 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 40 QG , Total Gate Charge (nC) TC = 25 ° C TJ = 175 ° C Single Pulse 1 1.4 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFB/IRFS/IRFSL23N20D 25 RD VDS VGS I D , Drain Current (A) 20 D.U.T. RG + -VDD 15 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 10 Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.00001 P DM t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFB/IRFS/IRFSL23N20D 600 D R IV E R L VDS D .U .T RG + V - DD IA S 20V tp A 0 .0 1 Ω Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP 500 BOTTOM ID 5.9A 10A 14A 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. QG 10 V 50KΩ 12V .2µF .3µF QGS QGD D.U.T. VG + V - DS VGS 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFB/IRFS/IRFSL23N20D Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. D= Period + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFB/IRFS/IRFSL23N20D TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) -B - 3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -A - 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 ) 4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1 .1 5 (.0 4 5 ) M IN 1 2 3 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) 4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 ) 3X 3X 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 ) L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .3 6 (.0 1 4 ) 3X M B A M 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) 2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 ) 2 .5 4 (.1 0 0) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H 3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . TO-220AB Part Marking Information E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y LOT C ODE 9B1M A IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEMBLY LOT CODE 8 PART NU M BER IR F 1 0 1 0 9246 9B 1M D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK www.irf.com IRFB/IRFS/IRFSL23N20D D2Pak Package Outline 1 0.54 (.4 15) 1 0.29 (.4 05) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 1 0.16 (.4 00 ) RE F. -B - 4.69 (.1 85) 4.20 (.1 65) 6.47 (.2 55 ) 6.18 (.2 43 ) 15 .4 9 (.6 10) 14 .7 3 (.5 80) 3 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5 .28 (.20 8) 4 .78 (.18 8) 3X 1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0) 0.5 5 (.022 ) 0.4 6 (.018 ) 0 .93 (.03 7 ) 0 .69 (.02 7 ) 0 .25 (.01 0 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 5 5) 1.1 4 (.0 4 5) B A M M IN IM U M R E CO M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO L D ER D IP. 2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2. 3 C O N TRO L LIN G D IM EN SIO N : IN C H . 4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S. LE A D A SS IG N M E N TS 1 - G A TE 2 - D R AIN 3 - S O U RC E 8.89 (.3 50 ) 17 .78 (.70 0) 3 .8 1 (.15 0) 2 .08 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E www.irf.com A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK 9 IRFB/IRFS/IRFSL23N20D TO-262 Package Outline TO-262 Part Marking Information 10 www.irf.com IRFB/IRFS/IRFSL23N20D D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 ( .1 6 1 ) 3 .9 0 ( .1 5 3 ) F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 ) 1 .6 5 ( .0 6 5 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) 1 5 .42 (.60 9 ) 1 5 .22 (.60 1 ) TRL 1 0.9 0 (.4 2 9) 1 0.7 0 (.4 2 1) 1 .75 (.06 9 ) 1 .25 (.04 9 ) 4 .7 2 (.1 3 6) 4 .5 2 (.1 7 8) 16 .1 0 (.63 4 ) 15 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532 ) 12.80 (.504 ) 2 7.4 0 (1.079 ) 2 3.9 0 (.9 41) 4 3 30 .00 ( 14.1 73 ) MAX. Notes: N O TE S : 1 . CO M F OR M S TO E IA -418 . 2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER . 3 . DIM E NS IO N M EA S UR E D @ H U B. 4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 2.6mH RG = 25Ω, IAS = 14A. ƒ ISD ≤ 14A, di/dt ≤ 130A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C 6 0.0 0 (2.36 2) M IN . 26 .40 (1 .03 9) 24 .40 (.9 61 ) 3 30.4 0 (1.19 7) M A X. 4 „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS † This is only applied to TO-220AB package ‡ This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 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