IRFTS9342TRPBF

PD - 96411A IRFTS9342PbF HEXFET® Power MOSFET VDS -30 V VGS max ±20 V D 1 6 40 mΩ D 2 5 D 66 mΩ G 3 4 S 12 nC -5.8 A RDS(on) max (@VGS = -10V) RDS(on) max (@VGS = -4.5V) Qg typ ID (@TA= 25°C) A D TSOP-6 Top View Applications l l Battery operated DC motor inverter MOSFET System/Load Switch Features and Benefits Features Industry-Standard TSOP-6 Package results in RoHS Compliant Containing no Lead, no Bromide and no Halogen ⇒ MSL1, Consumer Qualification Orderable part number Package Type IRFTS9342TRPbF TSOP-6 Benefits Multi-Vendor Compatibility Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tape and Reel 3000 Note Absolute Maximum Ratings Parameter Max. VDS Drain-to-Source Voltage -30 VGS Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V ±20 ID @ TA = 25°C -4.6 IDM c V -5.8 Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current ID @ TA = 70°C Units A -46 PD @TA = 25°C Power Dissipation 2.0 PD @TA = 70°C Power Dissipation 1.3 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range 0.02 -55 to + 150 W W/°C °C Notes  through „ are on page 2 www.irf.com 1 02/29/12 IRFTS9342PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BVDSS ΔΒVDSS/ΔTJ Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient -30 ––– ––– 19 ––– ––– RDS(on) Static Drain-to-Source On-Resistance VGS(th) ΔVGS(th) Gate Threshold Voltage ––– ––– -1.3 32 53 ––– 40 66 -2.4 IDSS Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current ––– ––– -5.5 ––– IGSS Gate-to-Source Forward Leakage ––– ––– ––– ––– ––– ––– 12 V VDS = VGS, ID = -25μA ––– mV/°C -1.0 VDS = -24V, VGS = 0V μA -150 VDS = -24V, VGS = 0V, TJ = 125°C -100 VGS = -20V nA 100 VGS = 20V ––– S VDS = -10V, ID = -4.6A ––– VDS = -15V Gate-to-Source Reverse Leakage Forward Transconductance V VGS = 0V, ID = -250μA mV/°C Reference to 25°C, ID = -1mA mΩ Total Gate Charge ––– 6.8 ––– Qgs Qgd Gate-to-Source Charge Gate-to-Drain Charge ––– ––– 1.8 3.1 ––– ––– nC RG td(on) tr Gate Resistance Turn-On Delay Time Rise Time ––– ––– ––– 17 4.6 13 ––– ––– ––– Ω td(off) tf Turn-Off Delay Time Fall Time ––– ––– 45 28 ––– ––– Ciss Coss Input Capacitance Output Capacitance ––– ––– 595 133 ––– ––– Crss Reverse Transfer Capacitance ––– 85 ––– gfs Qg ns pF e e VGS = -10V, ID = -5.8A VGS = -4.5V, ID = -4.6A VGS = -10V ID = -4.6A VDD = -15V, VGS = -10V ID = -4.6A RG = 6.8Ω VGS = 0V VDS = -25V ƒ = 1.0KHz Diode Characteristics Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD Min. Typ. Max. Units Conditions MOSFET symbol D ––– ––– -2.0 (Body Diode) Diode Forward Voltage ––– ––– -46 ––– ––– -1.2 V p-n junction diode. TJ = 25°C, IS = -4.6A, VGS = 0V trr Qrr Reverse Recovery Time Reverse Recovery Charge ––– ––– 20 11 30 17 ns nC TJ = 25°C, IF = -4.6A, VDD = -24V di/dt = 100A/μs ton Forward Turn-On Time A c showing the integral reverse G e S e Time is dominated by parasitic Inductance Thermal Resistance RθJA Junction-to-Ambient e Parameter Typ. ––– Max. 62.5 Units °C/W Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Pulse width ≤ 400μs; duty cycle ≤ 2%. ƒ When mounted on 1 inch square copper board. 2 www.irf.com IRFTS9342PbF 100 100 10 BOTTOM 1 -2.8V ≤60μs PULSE WIDTH 10 BOTTOM -2.8V 1 ≤60μs PULSE WIDTH Tj = 150°C Tj = 25°C 0.1 0.1 1 10 0.1 100 0.1 -V DS, Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 100 1.6 RDS(on) , Drain-to-Source On Resistance (Normalized) -I D, Drain-to-Source Current (A) 1 -V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 T J = 150°C 1 T J = 25°C VDS = -15V ≤60μs PULSE WIDTH 0.1 ID = -5.8A VGS = -10V 1.4 1.2 1.0 0.8 0.6 1 2 3 4 5 6 7 -60 -40 -20 0 Fig 3. Typical Transfer Characteristics 10000 -V GS, Gate-to-Source Voltage (V) C oss = C ds + C gd Ciss Coss Crss 100 Fig 4. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd 1000 20 40 60 80 100 120 140 160 T J , Junction Temperature (°C) -VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) VGS -10V -7.0V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) TOP VGS -10V -7.0V -5.0V -4.5V -4.0V -3.5V -3.0V -2.8V ID= -4.6A 12.0 VDS= -24V VDS= -15V 10.0 VDS= -6.0V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 -VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs.Drain-to-Source Voltage www.irf.com 0 2 4 6 8 10 12 14 16 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage 3 IRFTS9342PbF 100 1000 ID, Drain-to-Source Current (A) -I SD, Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) T J = 150°C 10 T J = 25°C 1 100 100μsec 10 1msec 10msec 1 0.1 VGS = 0V 0.01 0.1 0.4 0.6 0.8 1.0 1.2 0.01 1.4 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) -V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 6 -V GS(th), Gate threshold Voltage (V) 3.0 5 -I D, Drain Current (A) DC Tc = 25°C Tj = 150°C Single Pulse 4 3 2 1 0 25 50 75 100 125 2.8 2.6 2.4 2.2 2.0 1.8 ID = -25μA ID = -250μA 1.6 ID = -1.0mA ID = -10mA ID = -1.0A 1.4 1.2 1.0 150 -75 -50 -25 T A , Ambient Temperature (°C) 0 25 50 75 100 125 150 T J , Temperature ( °C ) Fig 10. Threshold Voltage vs. Temperature Fig 9. Maximum Drain Current vs. Case Temperature 100 Thermal Response ( Z thJA ) °C/W D = 0.50 10 0.20 0.10 0.05 1 0.02 0.01 0.1 0.01 0.001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + T A 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com 100 RDS(on), Drain-to -Source On Resistance ( mΩ) RDS(on), Drain-to -Source On Resistance (m Ω) IRFTS9342PbF ID = -5.8A 80 60 TJ = 125°C 40 T J = 25°C 20 0 2 4 6 8 10 12 14 16 18 220 200 180 160 Vgs = -4.5V 140 120 100 80 Vgs = -10V 60 40 20 20 0 10 -V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance vs. Gate Voltage 50 90 80 70 80 60 40 60 50 40 30 20 20 10 0 0.0001 0 25 50 75 100 125 150 0.001 Fig 14. Maximum Avalanche Energy vs. Drain Current D.U.T * 0.10 Driver Gate Drive + ‚ - „ D= D.U.T. ISD Waveform Reverse Recovery Current V DD + - Re-Applied Voltage Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Body Diode www.irf.com VDD Forward Drop InductorCurent Current Inductor Ripple ≤ 5% Reverse Polarity of D.U.T for P-Channel P.W. Period * + di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test 10 VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer  • • • • Period P.W. - 1 Fig 15. Typical Power vs. Time + ƒ RG 0.01 Time (sec) Starting T J , Junction Temperature (°C) * 40 100 ID TOP -0.91A -1.4A BOTTOM -4.6A Power (W) EAS , Single Pulse Avalanche Energy (mJ) 30 Fig 13. Typical On-Resistance vs. Drain Current 120 100 20 -I D, Drain Current (A) ISD * VGS = 5V for Logic Level Devices Fig 16. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs 5 IRFTS9342PbF Id Vds Vgs L VCC DUT 0 20K 1K Vgs(th) SS Qgodr Fig 17a. Gate Charge Test Circuit I AS D.U.T RG IAS -V GS -20V tp Qgs2 Qgs1 Fig 17b. Gate Charge Waveform L VDS Qgd VDD A DRIVER 0.01Ω tp V(BR)DSS 15V Fig 18b. Unclamped Inductive Waveforms Fig 18a. Unclamped Inductive Test Circuit V DS RD td(on) VGS RG D.U.T. - + t d(off) tf 10% V DD -V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % Fig 19a. Switching Time Test Circuit 6 tr VGS 90% VDS Fig 19b. Switching Time Waveforms www.irf.com IRFTS9342PbF TSOP-6 Package Outline TSOP-6 Part Marking Information Y = YEAR W = WEE K DATE CODE MARKING INSTRUCTIONS WW = (1-26) IF PRECEDED BY LAS T DIGIT OF CALENDAR YEAR PART NUMBER YEAR T OP LOT CODE PART NUMBE R CODE RE FE RE NCE: A = S I3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 F = IRF5801 G = IRF5803 H = IRF 5804 I = IRF 5805 J = IRF5806 K = IRF5810 N = IRF 5802 O= P= R= S = IRL T S 6342T RPBF IRFT S 8342T RPBF IRFT S 9342T RPBF Not applicable 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y 1 2 3 4 5 6 7 8 9 0 W 01 02 03 04 A B C D 24 25 26 X Y Z WW = (27-52) IF PRECEDED BY A LET T ER T = IRLT S 2242T RPBF Note: A line above the work week (as s hown here) indicates Lead-F ree. WORK WEEK YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ www.irf.com 7 IRFTS9342PbF TSOP-6 Tape and Reel Information 8mm FEED DIRECTION 4mm NOTES : 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Qualification information† Cons umer Qualification level Moisture Sensitivity Level RoHS compliant † †† ††† (per JE DE C JE S D47F TSOP-6 †† ††† guidelines ) MS L1 ††† (per IPC/JE DE C J-S T D-020D Yes ) Qualification standards can be found at International Rectifier’s web site http://www.irf.com/product-info/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ Applicable version of JEDEC standard at the time of product release. Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 02/2012 8 www.irf.com IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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