IRFU3707PBF

PD - 95019A IRFR3707PbF IRFRU3707PbF SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l l HEXFET® Power MOSFET VDSS RDS(on) max ID 30V 13mΩ 61A„ High Frequency Buck Converters for Computer Processor Power Lead-Free Benefits l Ultra-Low RDS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current D-Pak IRFR3707 I-Pak IRFU3707 Absolute Maximum Ratings Symbol VDS VGS ID @ TC = 25°C ID @ TC = 70°C IDM PD @TC = 25°C PD @TC = 70°C TJ , TSTG Parameter Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipationƒ Maximum Power Dissipationƒ Linear Derating Factor Junction and Storage Temperature Range Max. Units 30 ± 20 61 „ 51 „ 244 87 61 0.59 -55 to + 175 V V A W W mW/°C °C Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient Typ. Max. Units ––– ––– ––– 1.73 50 110 °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994 Notes  through „ are on page 9 www.irf.com 1 12/13/04 IRFR/U3707PbF Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 ––– ––– Static Drain-to-Source On-Resistance ––– Gate Threshold Voltage 1.0 ––– Drain-to-Source Leakage Current ––– Gate-to-Source Forward Leakage ––– Gate-to-Source Reverse Leakage ––– Typ. ––– 0.027 9.7 13.2 ––– ––– ––– ––– ––– Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 13 VGS = 10V, ID = 15A ƒ mΩ 17.5 VGS = 4.5V, ID = 12A ƒ 3.0 V VDS = VGS, ID = 250µA 20 VDS = 24V, VGS = 0V µA 100 VDS = 24V, VGS = 0V, TJ = 125°C 200 VGS = 16V nA -200 VGS = -16V Dynamic @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 37 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 19 8.2 6.3 18 8.5 78 11.8 3.3 1990 707 50 Max. Units Conditions ––– S VDS = 15V, ID = 49.6A ––– ID = 24.8A ––– nC VDS = 15V ––– VGS = 4.5V ƒ 27 VGS = 0V, VDS = 15V ––– VDD = 15V ––– ID = 24.8A ns ––– RG = 1.8Ω ––– VGS = 4.5V ƒ ––– VGS = 0V ––– VDS = 15V ––– pF ƒ = 1.0MHz Avalanche Characteristics Symbol EAS IAR Parameter Single Pulse Avalanche Energy‚ Avalanche Current Typ. Max. Units ––– ––– 213 61 mJ A Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  VSD Diode Forward Voltage trr Qrr trr Qrr Reverse Reverse Reverse Reverse 2 Recovery Recovery Recovery Recovery Time Charge Time Charge Min. Typ. Max. Units ––– ––– 61„ ––– ––– 244 ––– ––– ––– ––– ––– ––– 0.88 0.8 39 49 42 62 1.3 ––– 59 74 63 93 A V ns nC ns nC Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25°C, IS = 31A, VGS = 0V ƒ TJ = 125°C, IS = 31A, VGS = 0V ƒ TJ = 25°C, I F = 31A, VR=20V di/dt = 100A/µs ƒ TJ = 125°C, IF = 31A, VR=20V di/dt = 100A/µs ƒ www.irf.com IRFR/U3707PbF 1000 1000 VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 100 3.5V 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP 100 3.5V 10 20µs PULSE WIDTH Tj = 175°C 20µs PULSE WIDTH Tj = 25°C 1 1 0.1 1 10 100 0.1 VDS, Drain-to-Source Voltage (V) RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.5 TJ = 25 ° C TJ = 175 ° C 100 V DS = 15V 20µs PULSE WIDTH 5.0 6.0 7.0 8.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 1000 4.0 10 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 10 3.0 1 ID = 61A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U3707PbF VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 2500 Ciss 2000 1500 Coss 1000 500 10 ID = 24.8A VDS = 15V VGS , Gate-to-Source Voltage (V) 3000 8 6 4 2 Crss 0 0 1 10 0 100 Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) 20 30 40 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 175 ° C 10us 100 10 TJ = 25 ° C 1 100us 1ms 10 10ms 0.1 0.2 TC = 25 ° C TJ = 175° C Single Pulse V GS = 0 V 0.6 1.0 1.4 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 QG , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1.8 1 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFR/U3707PbF RD VDS 70 LIMITED BY PACKAGE VGS 60 D.U.T. I D , Drain Current (A) RG + -VDD 50 10V 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 10 0 90% 25 50 75 100 125 150 175 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 PDM 0.05 0.1 0.02 0.01 0.01 0.00001 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 RDS(on) , Drain-to -Source On Resistance ( Ω) RDS ( on ) , Drain-to-Source On Resistance ( Ω ) IRFR/U3707PbF 0.10 0.09 VGS = 4.5V 0.08 0.07 0.06 0.05 0.04 VGS = 10V 0.03 0.02 0.01 0.00 0 50 100 150 200 0.013 0.012 0.011 ID = 31A 0.010 0.009 4.0 250 5.0 6.0 7.0 8.0 9.0 10.0 VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A ) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. QG VGS .2µF QGS .3µF D.U.T. + V - DS QGD 600 EAS , Single Pulse Avalanche Energy (mJ) 50KΩ 12V VG VGS 3mA Charge IG ID Current Sampling Resistors Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms 15V V(BR)DSS tp L VDS D.U.T RG IAS 20V tp I AS DRIVER + - VDD 0.01Ω Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms 6 A ID 10.1A 20.7A BOTTOM 24.8A TOP 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( °C) Fig 15c. Maximum Avalanche Energy Vs. Drain Current www.irf.com IRFR/U3707PbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" PART NUMBER INTERNAT IONAL RECTIF IER LOGO Note: "P" in as sembly line position indicates "Lead-Free" IRFU120 12 916A 34 ASS EMBLY LOT CODE DATE CODE YEAR 9 = 1999 WEEK 16 LINE A OR PART NUMBER INTERNAT IONAL RECTIF IER LOGO IRFU120 12 ASS EMBLY LOT CODE www.irf.com 34 DATE CODE P = DES IGNATES LEAD-F REE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY SIT E CODE 7 IRFR/U3707PbF I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-251AA) Part Marking Information EXAMPLE: T HIS IS AN IRFU120 WIT H ASSEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRF U120 919A 56 78 ASS EMBLY LOT CODE Note: "P" in assembly line position indicates "Lead-Free" DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A OR INT ERNAT IONAL RECT IFIER LOGO PART NUMBER IRFU120 56 AS SEMBLY LOT CODE 8 78 DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE www.irf.com IRFR/U3707PbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 16.3 ( .641 ) 15.7 ( .619 ) 12.1 ( .476 ) 11.9 ( .469 ) FEED DIRECTION 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH 16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481. Notes:  Repetitive rating; pulse width limited by max. junction temperature. ‚ Starting TJ = 25°C, L = 0.7 mH RG = 25Ω, IAS = 24.8 A. ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%. „ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/