StrongIRFET™
IRFR7746PbF
IRFU7746PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
75V
9.5m
11.2m
59A
ID (Package Limited)
56A
D
G
S
D
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
D-Pak
IRFR7746PbF
G
Gate
Package Type
IRFR7746PbF
D-Pak
IRFU7746PbF
I-Pak
30
S
Source
Orderable Part Number
IRFR7746PbF
IRFR7746TRPbF
IRFU7746PbF
60
ID = 35A
Limited by package
50
25
20
TJ = 125°C
15
TJ = 25°C
10
40
30
20
10
5
2
4
6
8
10
12
14
16
18
20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate Voltage
1
I-Pak
IRFU7746PbF
D
Drain
Standard Pack
Form
Quantity
Tube
75
Tape and Reel
2000
Tube
75
ID, Drain Current (A)
RDS(on), Drain-to -Source On Resistance (m)
Base part number
S
D
G
S
www.irf.com © 2014 International Rectifier
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFR/U7746PbF
Absolute Maximum Rating
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
TJ
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
EAS (Thermally limited)
Single Pulse Avalanche Energy
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Junction-to-Case
RJC
Junction-to-Ambient (PCB Mount)
RJA
Junction-to-Ambient
RJA
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
Min.
75
–––
–––
–––
2.1
–––
–––
–––
–––
–––
Max.
59
42
56
230*
99
0.66
± 20
Units
A
W
W/°C
V
-55 to + 175
°C
300
116
160
mJ
See Fig 15, 16, 23a, 23b
A
mJ
Typ.
–––
–––
–––
Max.
1.52
50
110
Units
°C/W
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
53
––– mV/°C Reference to 25°C, ID = 1mA
9.5 11.2
VGS = 10V, ID = 35A
m
11.2 –––
VGS = 6.0V, ID = 18A
–––
3.7
V
VDS = VGS, ID = 100µA
–––
1.0
VDS =75 V, VGS = 0V
µA
––– 150
VDS =75V,VGS = 0V,TJ =125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
1.6
–––
Notes:
Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 56A by
source bonding technology. Note that current limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 190µH, RG = 50, IAS = 35A, VGS =10V.
ISD 35A, di/dt 570A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.
R is measured at TJ approximately 90°C.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to
application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V
*
Pulse drain current is limited at 224A by source bonding technology.
2
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IRFR/U7746PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qsync
td(on)
tr
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
Rise Time
Min.
112
–––
–––
–––
–––
–––
–––
Typ.
–––
59
14
18
41
7.9
30
td(off)
Turn-Off Delay Time
–––
34
tf
Ciss
Coss
Crss
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance
(Energy Related)
Output Capacitance (Time Related)
–––
–––
–––
–––
21
3107
257
159
–––
234
–––
VGS = 0V, VDS = 0V to 60V
–––
299
–––
VGS = 0V, VDS = 0V to 60V
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max. Units
–––
–––
59
–––
–––
230*
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
–––
–––
1.2
dv/dt
Peak Diode Recovery dv/dt
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
–––
–––
–––
–––
–––
–––
8.1
27
32
26
36
1.7
–––
–––
–––
–––
–––
–––
Coss eff.(ER)
Coss eff.(TR)
Max. Units
Conditions
–––
S VDS = 10V, ID =35A
89
ID = 35A
–––
VDS = 38V
nC
–––
VGS = 10V
–––
–––
VDD = 38V
–––
ID = 35A
ns
–––
RG= 2.7
VGS = 10V
–––
–––
–––
–––
pF
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
Diode Characteristics
Symbol
IS
ISM
3
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A
V
D
G
S
TJ = 25°C,IS = 35A,VGS = 0V
V/ns TJ = 175°C,IS = 35A,VDS = 75V
TJ = 25°C
VDD = 64V
ns
TJ = 125°C
IF = 35A,
TJ = 25°C di/dt = 100A/µs
nC
TJ = 125°C
A TJ = 25°C
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IRFR/U7746PbF
1000
100
BOTTOM
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
4.5V
100
BOTTOM
4.5V
10
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
1
0.1
1
10
100
0.1
1
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
1000
100
10
TJ = 175°C
TJ = 25°C
1
VDS = 25V
60µs PULSE WIDTH
0.1
ID = 35A
VGS = 10V
2.0
1.5
1.0
0.5
2
3
4
5
6
7
-60
-20
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
10
0.1
1
10
100
140
180
14.0
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
60
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
20
TJ , Junction Temperature (°C)
VGS, Gate-to-Source Voltage (V)
C, Capacitance (pF)
100
VDS, Drain-to-Source Voltage (V)
Fig 3. Typical Output Characteristics
100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
4
10
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ID = 35A
12.0
VDS = 60V
VDS = 38V
10.0
VDS= 15V
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60
70
80
QG, Total Gate Charge (nC)
Fig 8. Typical Gate Charge vs.
Gate-to-Source Voltage
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IRFR/U7746PbF
1000
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100
TJ = 175°C
TJ = 25°C
10
1
100µsec
Limited by Package
10
1msec
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
VGS = 0V
0.01
0.1
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.4
10
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
0.6
94
Id = 1.0mA
0.5
90
0.4
88
Energy (µJ)
V(BR)DSS, Drain-to-Source Breakdown Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
VSD , Source-to-Drain Voltage (V)
92
DC
86
84
0.3
0.2
82
80
0.1
78
0.0
76
-60
-20
20
60
100
140
0
180
TJ , Temperature ( °C )
20
30
40
50
60
70
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Drain-to-Source Breakdown Voltage
RDS (on), Drain-to -Source On Resistance (m)
10
Fig 12. Typical Coss Stored Energy
50.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
5.0
0
50
100
150
200
ID, Drain Current (A)
Fig 13. Typical On-Resistance vs. Drain Current
5
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IRFR/U7746PbF
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Avalanche Current (A)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
140
TOP
Single Pulse
BOTTOM 1.0% Duty Cycle
ID = 35A
EAR , Avalanche Energy (mJ)
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
Fig 16. Maximum Avalanche Energy vs. Temperature
6
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Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
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IRFR/U7746PbF
4.5
14
4.0
12
IF = 24A
VR = 64V
3.5
10
TJ = 25°C
TJ = 125°C
IRRM (A)
VGS(th), Gate threshold Voltage (V)
3.0
2.5
ID = 100µA
ID = 250µA
ID = 1.0mA
ID = 10mA
ID = 1.0A
2.0
1.5
8
6
4
2
1.0
0
-60 -40 -20 0 20 40 60 80 100120140160180
0 100 200 300 400 500 600 700 800 900 1000
TJ , Temperature ( °C )
diF /dt (A/µs)
Fig 18. Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
200
14
IF = 35A
VR = 64V
12
TJ = 25°C
TJ = 125°C
140
QRR (nC)
IRRM (A)
160
TJ = 25°C
TJ = 125°C
10
IF = 24A
VR = 64V
180
8
6
120
100
80
4
60
2
40
20
0
0
200
400
600
800
0
1000
200
400
600
800
1000
diF /dt (A/µs)
diF /dt (A/µs)
Fig 20. Typical Stored Charge vs. dif/dt
Fig 19. Typical Recovery Current vs. dif/dt
200
IF = 35A
VR = 64V
180
160
TJ = 25°C
TJ = 125°C
QRR (nC)
140
120
100
80
60
40
20
0
200
400
600
800
1000
diF /dt (A/µs)
Fig 21. Typical Stored Charge vs. dif/dt
7
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Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V(BR)DSS
tp
15V
L
VDS
D.U.T
RG
IAS
20V
tp
DRIVER
+
V
- DD
A
I AS
0.01
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1 Qgs2
Fig 25a. Gate Charge Test Circuit
8
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Qgd
Qgodr
Fig 25b. Gate Charge Waveform
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IRFR/U7746PbF
D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH ASSEMBLY
LOT CODE 1234
ASSEMBLED ON WW 16, 2001
IN THE ASSEMBLY LINE "A"
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
Note: "P" in assembly line position
indicates "Lead-Free"
IRFR120
12
116A
34
ASSEMBLY
LOT CODE
DATE CODE
YEAR 1 = 2001
WEEK 16
LINE A
"P" in assembly line position indicates
"Lead-Free" qualification to the consumer-level
OR
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFR120
12
ASSEMBLY
LOT CODE
34
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
P = DESIGNATES LEAD-FREE
PRODUCT QUALIFIED TO THE
CONSUMER LEVEL (OPTIONAL)
YEAR 1 = 2001
WEEK 16
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFR/U7746PbF
I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: THIS IS AN IRFU120
WITH ASSEMBLY
LOT CODE 5678
ASSEMBLED ON WW 19, 2001
IN THE ASSEMBLY LINE "A"
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFU120
119A
56
78
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates Lead-Free"
DATE CODE
YEAR 1 = 2001
WEEK 19
LINE A
OR
INTERNATIONAL
RECTIFIER
LOGO
PART NUMBER
IRFU120
56
ASSEMBLY
LOT CODE
78
DATE CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 1 = 2001
WEEK 19
A = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRFR/U7746PbF
D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches)
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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IRFR/U7746PbF
Qualification Information†
Industrial
(per JEDEC JESD47F) ††
Qualification Level
D-Pak
Moisture Sensitivity Level
MSL1
I-Pak
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/7/2014
Comments
Updated EAS (L =1mH) = 160mJ on page 2
Updated note 10 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 18A, VGS =10V” on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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IMPORTANT NOTICE
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”) .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer’s products and any
use of the product of Infineon Technologies in
customer’s applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies office
(www.infineon.com).
WARNINGS
Due to technical requirements products may
contain dangerous substances. For information on
the types in question please contact your nearest
Infineon Technologies office.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be expected to result in personal
injury.
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