IRFZ44VSTRL

PD - 94050A IRFZ44VS IRFZ44VL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Optimized for SMPS Applications HEXFET® Power MOSFET D VDSS = 60V RDS(on) = 16.5mΩ G ID = 55A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. D2Pak IRFZ44VS TO-262 IRFZ44VL The through-hole version (IRFZ44VL) is available for low-profile applications. Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚ Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 55 39 220 115 0.77 ± 20 115 55 11 4.5 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RθJC RθJA www.irf.com Junction-to-Case Junction-to-Ambient Typ. Max. Units ––– ––– 1.3 40 °C/W 1 01/04/02 IRFZ44VS/IRFZ44VL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 60 ––– ––– 2.0 24 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.062 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 13 97 40 57 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ––– 4.5 LS Internal Source Inductance ––– 7.5 Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– 1812 393 103 V(BR)DSS ∆V(BR)DSS/∆TJ IGSS Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 16.5 mΩ VGS = 10V, ID = 31A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 31A„ 25 VDS = 60V, VGS = 0V µA 250 VDS = 48V, VGS = 0V, TJ = 150°C 100 VGS = 20V nA -100 VGS = -20V 67 ID = 51A 18 nC VDS = 48V 25 VGS = 10V, See Fig. 6 and 13 „ ––– VDD = 30V ––– ID = 51A ns ––– RG = 9.1Ω ––– RD = 0.6Ω, See Fig. 10 „ Between lead, ––– 6mm (0.25in.) nH G from package ––– and center of die contact ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 55 ––– ––– showing the A G integral reverse ––– ––– 220 S p-n junction diode. ––– ––– 2.5 V TJ = 25°C, IS = 51A, VGS = 0V „ ––– 70 105 ns TJ = 25°C, IF = 51A ––– 146 219 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 89µH ƒ ISD ≤ 51A, di/dt ≤ 227A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C „ Pulse width ≤ 300µs; duty cycle ≤ 2%. RG = 25Ω, IAS = 51A. (See Figure 12) 2 www.irf.com IRFZ44VS/IRFZ44VL 1000  1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 100 100 10 4.5V 1  20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10  V DS = 25V 20µs PULSE WIDTH 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 12 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175° C  6 10 100 Fig 2. Typical Output Characteristics TJ = 25 ° C  5 1 VDS , Drain-to-Source Voltage (V) 1000 1  20µs PULSE WIDTH TJ = 175°C 1 0.1 100 Fig 1. Typical Output Characteristics 100 4.5V 10 VDS , Drain-to-Source Voltage (V) 4  VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP 3.0 ID = 55A  2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V  20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig 4. Normalized On-Resistance vs. Temperature 3 IRFZ44VS/IRFZ44VL 20 4000 Crss = Cgd Coss = Cds + Cgd 3000 C, Capacitance(pF) VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Cis = Cgs + Cgd, Cds SHORTED 2000 Ciss 1000 Coss  ID = 51A  V DS= 48V V DS= 30V V DS= 12V 16 12 8 4 Crss 0 0 1 10 0 100 1000 1000 ID , Drain Current (A) 10us  100 TJ = 25 ° C  100us  10  1ms 1 V GS = 0 V  0.7 100 DS(on) 100 0.1 0.2 80 OPERATION IN THIS AREA LIMITED BY R  TJ = 175° C  10 60 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage Fig 5. Typical Capacitance vs. Drain-to-Source Voltage ISD , Reverse Drain Current (A) 40 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) 1.2 1.7 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 20 2.2 1  10ms  TC = 25 ° C TJ = 175 °C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFZ44VS/IRFZ44VL RD VDS 60 VGS ID , Drain Current (A) 50 D.U.T. RG + V DD - 40 10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS td(on) Fig 9. Maximum Drain Current vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50  0.20 0.10 0.1 PDM 0.05 0.02 0.01 0.01 0.00001 t1  SINGLE PULSE (THERMAL RESPONSE) t2  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x ZthJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 15V L VDS D R IV E R D .U .T RG + - VD D IA S 20V 0 .0 1 Ω tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D S S tp A EAS , Single Pulse Avalanche Energy (mJ) IRFZ44VS/IRFZ44VL  250 ID 21A 36A BOTTOM 51A TOP 200 150 100 50 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature ( ° C) Fig 12c. Maximum Avalanche Energy vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS D.U.T. QGD + V - DS VGS VG 3mA IG Charge Fig 13a. Basic Gate Charge Waveform 6 ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFZ44VS/IRFZ44VL Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer ƒ + ‚ - - „ +  • • • • RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ44VS/IRFZ44VL D2Pak Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) 10.29 (.405) 1.40 (.055) M A X. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 3 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 3X 1.40 (.055) 1.14 (.045) 3X 5.08 (.200 ) 0.55 (.022) 0.46 (.018) 0.93 (.037) 0.69 (.027) 0.25 (.010) M 8.89 (.350) REF. 1 .39 (.055) 1 .14 (.045) B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T 11.43 (.4 50) N O TE S : 1 D IM E N S IO N S A F T E R S O LD E R D IP . 2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982. 3 C O N T R O LLIN G D IM E N S IO N : IN C H . 4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S . 8.89 (.350) LE A D A S S IG N M E N TS 1 - G A TE 2 - D R A IN 3 - SOURCE 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X D2Pak Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 8 PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L www.irf.com IRFZ44VS/IRFZ44VL TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE www.irf.com PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C 9 IRFZ44VS/IRFZ44VL D2Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TR R 1 .6 0 (.0 63 ) 1 .5 0 (.0 59 ) 4 .10 (.16 1) 3 .90 (.15 3) F E E D D IR E C TIO N 1 .8 5 (.0 73 ) 1 .6 5 (.0 65 ) 1.60 (.06 3) 1.50 (.05 9) 1 1 .6 0 (.4 57 ) 1 1 .4 0 (.4 49 ) 0.3 6 8 (.01 4 5 ) 0.3 4 2 (.01 3 5 ) 15 .4 2 (.6 0 9 ) 15 .2 2 (.6 0 1 ) 24 .3 0 (.9 5 7 ) 23 .9 0 (.9 4 1 ) TR L 10 .9 0 (.4 2 9 ) 10 .7 0 (.4 2 1 ) 1.7 5 (.06 9 ) 1.2 5 (.04 9 ) 4 .7 2 (.1 36 ) 4 .5 2 (.1 78 ) 1 6 .1 0 (.63 4 ) 1 5 .9 0 (.62 6 ) F E E D D IR E C T IO N 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) M A X. N O T ES : 1. C O M F O R M S T O EIA-418. 2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER . 3. D IM EN SIO N ME AS UR ED @ HU B . 4. IN C LU DE S FLA N G E D IS TO RT IO N @ O U TE R E D G E. 60.00 (2.362) M IN . 26 .40 (1.03 9) 24 .40 (.961 ) 3 30.40 (1.197) M AX . 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/02 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/