0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IRFZ46NS

IRFZ46NS

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 55V 53A D2PAK

  • 数据手册
  • 价格&库存
IRFZ46NS 数据手册
PD - 91305C Advanced Process Technology l Surface Mount (IRFZ46NS) l Low-profile through-hole (IRFZ46NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ46NS IRFZ46NL HEXFET® Power MOSFET l D VDSS = 55V RDS(on) = 0.0165Ω G ID = 53Aˆ Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. S The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRFZ46NL) is available for lowprofile applications. D 2 Pak TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C V GS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V… Continuous Drain Current, VGS @ 10V… Pulsed Drain Current … Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ… Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 53 ˆ Units 37 180 3.8 107 0.71 ± 20 28 11 5.0 -55 to + 175 A W W W/°C V A mJ V/ns 300 (1.6mm from case ) °C Thermal Resistance Parameter RθJC RθJA www.irf.com Junction-to-Case Junction-to-Ambient ( PCB Mounted,steady-state)** Typ. Max. Units ––– ––– 1.4 40 °C/W 1 04/08/04 IRFZ46NS/IRFZ46NL Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance V GS(th) Gate Threshold Voltage gfs Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 55 ––– ––– 2.0 19 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– LS Internal Source Inductance ––– Ciss Coss Crss EAS Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy ‚ ––– ––– ––– ––– V (BR)DSS IDSS Drain-to-Source Leakage Current IGSS Typ. ––– 0.057 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– 14 76 52 57 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID =1mA… .0165 Ω VGS =10V, ID = 28A „ 4.0 V VDS = VGS, ID = 250µA ––– S VDS = 25V, ID = 28A„… 25 VDS = 55V, VGS = 0V µA 250 VDS = 44V, VGS = 0V, T J = 150°C 100 VGS = 20V nA -100 VGS = -20V 72 ID = 28A 11 nC VDS = 44V 26 VGS = 10V, See Fig. 6 and 13 „… ––– VDD = 28V ––– ID = 28A ns ––– RG = 12Ω ––– RD = 0.98Ω, See Fig. 10„… Between lead, nH 7.5 ––– and center of die contact 1696 ––– VGS = 0V 407 ––– pF VDS = 25V 110 ––– ƒ = 1.0MHz, See Fig. 5… 583† 152‡ IAS = 28A, L = 389mH Source-Drain Ratings and Characteristics IS I SM V SD t rr Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol ––– ––– 53 showing the A G integral reverse ––– ––– 180 p-n junction diode. S ––– ––– 1.3 V TJ = 25°C, IS = 28A, VGS = 0V „ ––– 67 101 ns TJ = 25°C, IF = 28A ––– 208 312 nC di/dt = 100A/µs „… Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes:  Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ‚ Starting TJ = 25°C, L = 389µH RG = 25Ω, IAS = 28A. (See Figure 12) ƒ ISD ≤ 28A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C. „ Pulse width ≤ 400µs; duty cycle ≤ 2%. … Uses IRFZ46N data and test conditions. † This is a typical value at device destruction and represents operation outside rated limits. ‡ This is a calculated value limited to TJ = 175°C. ˆ Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A. ** When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. 2 www.irf.com IRFZ46NS/IRFZ46NL 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D 100 10 4.5V 20µs PULSE WIDTH TCJ == 25°C T 25°C 1 0.1 1 10 A 100 100 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 25°C TJ = 175°C 10 V DS = 25V 20µs PULSE WIDTH 6 7 8 9 10 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 10 A 100 Fig 2. Typical Output Characteristics 2.5 5 1 VDS , Drain-to-Source Voltage (V) 1000 1 20µs PULSE WIDTH TTCJ = = 175°C 175°C 1 0.1 Fig 1. Typical Output Characteristics 100 4.5V 10 VDS , Drain-to-Source Voltage (V) 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP TOP A I D = 46A 2.0 1.5 1.0 0.5 VGS = 10V 0.0 -60 -40 -20 0 20 40 60 A 80 100 120 140 160 180 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFZ46NS/IRFZ46NL 2800 V GS , Gate-to-Source Voltage (V) 2400 C, Capacitance (pF) 20 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd V DS = 44V V DS = 28V 16 Ciss 2000 I D = 28A 12 1600 Coss 1200 800 Crss 400 0 10 4 FOR TEST CIRCUIT SEE FIGURE 13 0 A 1 8 0 100 VDS , Drain-to-Source Voltage (V) 20 30 40 50 A 60 Q G , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 OPERATION IN THIS AREA LIMITED BY R DS(on) I D , Drain Current (A) ISD , Reverse Drain Current (A) 10 100 TJ = 175°C TJ = 25°C 10 VGS = 0V 1 0.4 0.8 1.2 1.6 2.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 A 2.4 10µs 100 100µs 10 1ms 10ms TC = 25°C TJ = 175°C Single Pulse 1 1 A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFZ46NS/IRFZ46NL RD V DS 60 V GS ID, Drain Current (A) D.U.T. RG Limited By Package 50 + V-DD 10V 40 Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 30 Fig 10a. Switching Time Test Circuit 20 VDS 90% 10 0 25 50 75 100 125 150 175 T C , Case Temperature (°C) 10% VGS td(on) Fig 9. Maximum Drain Current Vs. Case Temperature tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 PDM 0.05 0.02 0.01 0.01 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 L VDS D.U.T. RG + V - DD IAS 10 V tp 0.01Ω Fig 12a. Unclamped Inductive Test Circuit V(BR)DSS tp VDD E AS , Single Pulse Avalanche Energy (mJ) IRFZ46NS/IRFZ46NL 500 TOP BOTTOM 400 ID 11A 20A 28A 300 200 100 0 VDD = 25V 25 50 A 75 100 125 150 175 Starting TJ , Junction Temperature (°C) VDS Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF 10 V QGS + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform 6 D.U.T. QGD IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFZ46NS/IRFZ46NL Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + D.U.T ƒ + ‚ - - „ +  RG • • • • dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. Period D= + - V DD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% * VGS ISD = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFZ46NS/IRFZ46NL D2Pak Package Outline 10.54 (.415) 10.29 (.405) 1.40 (.055) MAX. -A- 1.32 (.052) 1.22 (.048) 2 1.78 (.070) 1.27 (.050) 1 10.16 (.400) REF. -B- 4.69 (.185) 4.20 (.165) 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 3 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 5.28 (.208) 4.78 (.188) 1.40 (.055) 1.14 (.045) 3X 3X 5.08 (.200) 0.55 (.022) 0.46 (.018) 0.93 (.037) 0.69 (.027) 0.25 (.010) M 8.89 (.350) REF. 1.39 (.055) 1.14 (.045) B A M MINIMUM RECOMMENDED FOOTPRINT 11.43 (.450) NOTES: 1 2 3 4 DIMENSIONS AFTER SOLDER DIP. DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. CONTROLLING DIMENSION : INCH. HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2X 2.54 (.100) 2X Part Marking Information D2Pak INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 8 A PART NUMBER F530S 9246 9B 1M DATE CODE (YYWW) YY = YEAR WW = WEEK www.irf.com IRFZ46NS/IRFZ46NL TO-262 Package Outline Dimensions are shown in millimeters (inches) 1- GATE IGBT 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information /  / ,5 1 $ ,6 ,6 7+ ( 3/ 0 ;$ ( (5 ), 7, (& 5      : : 1 2 ' /( % (0 66 $ / $ 1 2 7, $ 1 5 7( ,1 (5 % 0 8 1 7 5 3$    ( ' 2 & 7 /2 2 * /2  & ( ,1 / /< % (0 66 $ ( + 7 ,1 ( ' 2 & 7( $ ' /< % 0 6( 6 $      5 $
IRFZ46NS 价格&库存

很抱歉,暂时无法提供与“IRFZ46NS”相匹配的价格&库存,您可以联系我们找货

免费人工找货