PD - 91620A
IRG4BC20K-S
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
• Combines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
VCES = 600V
VCE(on) typ. = 2.27V
G
@VGE = 15V, IC = 9.0A
E
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGBC20K-S and
IRGBC20M-S devices
D 2 Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
16
9.0
32
32
10
±20
29
60
24
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient ( PCB Mounted,steady-state)V
Weight
Typ.
Max.
–––
0.5
–––
1.44
2.1
–––
40
–––
Units
°C/W
g
1
4/24/2000
IRG4BC20K-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ. Max. Units
Conditions
Collector-to-Emitter Breakdown Voltage
600
—
—
V
VGE = 0V, IC = 250µA
Emitter-to-Collector Breakdown Voltage T 18
—
—
V
VGE = 0V, IC = 1.0A
Temperature Coeff. of Breakdown Voltage — 0.49 —
V/°C VGE = 0V, IC = 1.0mA
— 2.00 —
IC = 6.0A
VGE = 15V
— 2.27 2.8
IC = 9.0A
Collector-to-Emitter Saturation Voltage
V
— 3.01 —
IC = 16A
See Fig.2, 5
— 2.43 —
IC = 9.0A , TJ = 150°C
Gate Threshold Voltage
3.0
—
6.0
VCE = VGE, IC = 250µA
Temperature Coeff. of Threshold Voltage
—
-10
— mV/°C VCE = VGE, IC = 250µA
Forward Transconductance U
2.9
4.3
—
S
VCE = 100 V, IC = 9.0A
—
—
250
VGE = 0V, VCE = 600V
Zero Gate Voltage Collector Current
—
—
2.0
µA
VGE = 0V, VCE = 10V, TJ = 25°C
—
— 1000
VGE = 0V, VCE = 600V, TJ = 150°C
Gate-to-Emitter Leakage Current
—
— ±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
Eon
Eoff
Ets
LE
Cies
Coes
Cres
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
34
51
IC = 9.0A
4.9 7.4
nC
VCC = 400V
See Fig.8
14
21
VGE = 15V
28
—
27
—
TJ = 25°C
ns
150 220
IC = 9.0A, VCC = 480V
100 150
VGE = 15V, RG = 50Ω
0.15 —
Energy losses include "tail"
0.25 —
mJ See Fig. 9,10,14
0.40 0.6
—
—
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 50Ω , VCPK < 500V
28
—
TJ = 150°C,
29
—
IC = 9.0A, VCC = 480V
ns
190
—
VGE = 15V, RG = 50Ω
190
—
Energy losses include "tail"
0.68 —
mJ See Fig. 11,14
0.07 —
TJ = 25°C, VGE = 15V, RG = 50Ω
0.13 —
mJ IC = 6.0A, VCC = 480V
0.20 —
Energy losses include "tail"
7.5
—
nH
Measured 5mm from package
450
—
VGE = 0V
61
—
pF
VCC = 30V
See Fig. 7
14
—
ƒ = 1.0MHz
Details of note Q through V are on the last page
2
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IRG4BC20K-S
5.0
F o r b o th :
T ria n g u la r w a ve :
D uty c yc le: 50%
T J = 125°C
55°C
T s ink = 90°C
G ate driv e as spec ified
4.0
C la m p vo l ta g e :
8 0 % o f ra te d
Load Current ( A )
P o w e r D is s ip a tio n = 1 .8 W
3.0
S q u a re wave :
6 0 % o f ra te d
vo l ta g e
2.0
1.0
Id e a l d io de s
A
0.0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
TJ = 25 o C
TJ = 150 o C
10
V
= 15V
20µs PULSE WIDTH
GE
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
10
TJ = 150 o C
TJ = 25 oC
V
= 50V
5µs PULSE WIDTH
CC
1
5
10
15
20
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20K-S
20
5.0
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
15
10
5
0
25
50
75
100
125
150
I C = 18 A
4.0
3.0
I C = 9.0A
9A
I C = 4.5 A
2.0
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20K-S
C, Capacitance (pF)
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
600
Cies
400
200
C
oes
20
VGE , Gate-to-Emitter Voltage (V)
800
VCC = 400V
I C = 9.0A
16
12
8
4
C
res
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
9.0A
I C = 9A
0.4
0.3
0.2
0
10
20
30
40
, GateResistance
Resistance (Ohm)
(Ω)
RGRG, Gate
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
30
40
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.5
10
QG , Total Gate Charge (nC)
50
50Ω
RG = Ohm
VGE = 15V
VCC = 480V
IC = 18 A
1
IC = 9.0A
9A
IC = 4.5 A
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC20K-S
RG
TJ
VCC
4.0 VGE
100
= 50
Ohm
Ω
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
5.0
3.0
2.0
1.0
VGE = 20V
T J = 125 oC
10
SAFE OPERATING AREA
1
0.0
0
8
16
24
32
1
40
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Tape & Reel Information
D2Pak
TR R
1 .6 0 ( .0 6 3 )
1 .5 0 ( .0 5 9 )
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )
F E E D D I RE C T IO N
1 .8 5 (.0 7 3 )
1 .6 5 (.0 6 5 )
1.6 0 (.0 6 3 )
1.5 0 (.0 5 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 1 .6 0 (.45 7 )
1 1 .4 0 (.44 9 )
1 5.4 2 (.6 0 9 )
1 5.2 2 (.6 0 1 )
2 4 .3 0 (.95 7 )
2 3 .9 0 (.94 1 )
TRL
1 0 .9 0 (.42 9 )
1 0 .7 0 (.42 1 )
1.7 5 (.0 6 9 )
1.2 5 (.0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 (.63 4 )
1 5 .9 0 (.62 6 )
F E E D D IR E C T I ON
1 3.50 (.53 2)
1 2.80 (.50 4)
2 7.4 0 ( 1.0 7 9)
2 3.9 0 ( .94 1 )
4
3 3 0.00
( 14 .1 73 )
M AX.
N O TE S :
1. C O MF O R M S T O EIA- 41 8.
2. C O N TR O LL IN G D IM EN SIO N : M IL LIM ET ER .
3. D IM EN S IO N M EAS UR ED @ H U B.
4. IN C L U D E S FL AN G E D IST O R T IO N @ O U T ER E D G E.
6
6 0.00 (2 .3 62)
M IN .
26 .4 0 (1 .03 9 )
24 .4 0 (.9 61 )
3
3 0.4 0 (1.19 7)
MA X.
4
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IRG4BC20K-S
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X I C@25°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
90 %
10 %
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
1 0%
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
Eon
E o ff
E ts = (E o n +E o ff )
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7
IRG4BC20K-S
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
V When mounted on 1" square PCB (FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer
to application note #AN-994.
S Repetitive rating; pulse width limited by maximum
junction temperature.
D2Pak Package Outline
1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )
1 .4 0 (.0 55 )
M A X.
-A -
1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )
2
1 .7 8 (.0 7 0 )
1 .2 7 (.0 5 0 )
1
1 0 .1 6 (.4 0 0 )
REF .
-B -
4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )
6 .4 7 (.2 5 5 )
6 .1 8 (.2 4 3 )
1 5 .4 9 (.6 1 0 )
1 4 .7 3 (.5 8 0 )
3
2 .7 9 (.1 1 0 )
2 .2 9 (.0 9 0 )
2 .6 1 (.1 0 3 )
2 .3 2 (.0 9 1 )
5 .2 8 (.2 0 8 )
4 .7 8 (.1 8 8 )
3X
1 .4 0 (.0 5 5 )
1 .1 4 (.0 4 5 )
3X
5 .0 8 (.2 0 0 )
0 .5 5 (.0 2 2 )
0 .4 6 (.0 1 8 )
0 .9 3 (.0 3 7 )
0 .6 9 (.0 2 7 )
0 .2 5 (.0 1 0 )
M
8 .8 9 (.3 5 0 )
REF.
1 .3 9 (.0 5 5 )
1 .1 4 (.0 4 5 )
B A M
M IN IM U M R E C O M M E N D E D F O O T P R IN T
1 1 .43 (.4 5 0 )
NOTES:
1 D IM E N S IO N S A F T E R S O L D E R D IP .
2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
3 C O N T R O L L IN G D IM E N S IO N : IN C H .
4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S .
L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - SOURCE
8 .8 9 (.3 5 0 )
1 7 .7 8 (.7 0 0 )
3 .8 1 (.1 5 0 )
2 .0 8 (.0 8 2 )
2X
2 .5 4 (.1 0 0 )
2X
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Data and specifications subject to change without notice. 10/00
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/