IRG4BC20W-S

PD - 94076 IRG4BC20W-S INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications • Industry-benchmark switching losses improve efficiency of all power supply topologies • 50% reduction of Eoff parameter • Low IGBT conduction losses • Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability VCES = 600V VCE(on) typ. = 2.16V G @VGE = 15V, IC = 6.5A E N-channel Benefits • Lower switching losses allow more cost-effective operation than power MOSFETs up to 150kHz ("hard switched" mode) • Of particular benefit to single-ended converters and boost PFC topologies 150W and higher • Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300kHz) D2Pak Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 13 6.5 52 52 ± 20 200 60 24 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case ) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.5 ––– 1.44 2.1 ––– 40 ––– Units °C/W g (oz) 1 5/24/00 IRG4BC20W-S Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage — 0.48 — V/°C VGE = 0V, IC = 1.0mA — 2.16 2.6 IC = 6.5A VGE = 15V Collector-to-Emitter Saturation Voltage — 2.55 — IC = 13A See Fig.2, 5 V — 2.05 — IC = 6.5A , TJ = 150°C Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA Temperature Coeff. of Threshold Voltage — -8.8 — mV/°C VCE = VGE, IC = 250µA Forward Transconductance … 5.5 8.3 — S VCE = 100 V, IC = 6.5A — — 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 26 38 IC = 6.5A 3.7 5.5 nC VCC = 400V See Fig.8 10 15 VGE = 15V 22 — 14 — TJ = 25°C ns 110 160 IC = 6.5A, VCC = 480V 64 96 VGE = 15V, RG = 50Ω 0.06 — Energy losses include "tail" 0.08 — mJ See Fig. 9, 10, 14 0.14 0.2 21 — TJ = 150°C, 15 — IC = 6.5A, VCC = 480V ns 150 — VGE = 15V, RG = 50Ω 150 — Energy losses include "tail" 0.34 — mJ See Fig. 10, 11, 14 7.5 — nH Measured 5mm from package 490 — VGE = 0V 38 — pF VCC = 30V See Fig. 7 8.8 — ƒ = 1.0MHz Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. (See Fig. 13b) ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω, „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. (See Fig. 13a) ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC20W-S 25 F o r b o th : T ria n g u la r w a ve : D uty c yc le: 50% TJ = 125° C Ts ink = 90°C G ate drive as spec ified 20 C la m p vo l ta g e : 8 0 % o f ra te d Load Current ( A ) P o w e r D is s ip a tio n = 1 3 W 15 S q u a re wave : 6 0 % o f ra te d v o lta g e 10 5 Id e al d io de s A 0 0.1 1 10 100 1000 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 10 TJ = 150 °C TJ = 25 °C V GE = 15V 20µs PULSE WIDTH 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 9 10 11 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC20W-S 14 VCE , Collector-to-Emitter Voltage(V) 3.0 Maximum DC Collector Current(A) 12 10 8 6 4 2 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH I C = 13 A I C = 6.5 A 2.0 I C =3.25 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 P DM 0.05 0.1 0.01 0.00001 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC20W-S 1000 600 VGE , Gate-to-Emitter Voltage (V) 800 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 400 Coes 200 Cres 0 1 10 16 12 8 4 0 100 0 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 10 0.14 0.13 0.12 10 20 30 40 RG, Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 15 20 25 30 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 °C I C = 6.5A 0 5 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.15 VCC = 400V I C = 6.5A 50 50 Ω RG = Ohm VGE = 15V VCC = 480V 1 IC = 13 A IC = 6.5 A IC = 3.25 A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC20W-S RG TJ VCC VGE 100 Ω = 50 Ohm = 150 ° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 0.8 0.6 0.4 0.2 VGE = 20V T J = 125 oC 10 SAFE OPERATING AREA 0.0 1 0 2 4 6 8 10 12 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 14 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC20W-S L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X I C@25°C 480µF 960V  ‚ * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V * Driver same type as D.U.T., VC = 480V  ‚ ƒ  ‚ 90 % 10 % ƒ VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) www.irf.com 7 IRG4BC20W-S D2Pak Package Outline 1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A- 1.3 2 (.05 2) 1.2 2 (.04 8) 2 1.7 8 (.07 0) 1.2 7 (.05 0) 1 10 .1 6 (.4 00 ) R E F. -B- 4 .6 9 (.18 5) 4 .2 0 (.16 5) 6.47 (.2 55 ) 6.18 (.2 43 ) 3 1 5.49 (.6 10) 1 4.73 (.5 80) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 5.28 (.2 08 ) 4.78 (.1 88 ) 3X 1.40 (.0 55) 1.14 (.0 45) 5 .08 (.20 0) 0.55 (.0 22) 0.46 (.0 18) 0.9 3 (.0 37 ) 3X 0.6 9 (.0 27 ) 0.25 (.0 10 ) M 8.8 9 (.3 50 ) R E F. 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 ) NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS . LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E 8 .89 (.35 0) 17 .78 (.70 0) 3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X D2Pak Part Marking Information IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E 8 A PART NUM BER F530S 9 24 6 9B 1M DATE CODE (Y YW W ) YY = Y E A R W W = W EEK www.irf.com IRG4BC20W-S D2Pak Tape & Reel Information TR R 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 ) F EE D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 .6 5 (.0 6 5 ) 1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 1 1 .6 0 (.4 5 7 ) 1 1 .4 0 (.4 4 9 ) 0 .3 6 8 (.0 1 4 5 ) 0 .3 4 2 (.0 1 3 5 ) 1 5 .4 2 (.6 0 9 ) 1 5 .2 2 (.6 0 1 ) 2 4 .3 0 (.9 5 7 ) 2 3 .9 0 (.9 4 1 ) TRL 1 0 .9 0 (.4 2 9 ) 1 0 .7 0 (.4 2 1 ) 1 .7 5 (.0 6 9 ) 1 .2 5 (.0 4 9 ) 4 .7 2 (.1 3 6 ) 4 .5 2 (.1 7 8 ) 1 6 .1 0 (.6 3 4 ) 1 5 .9 0 (.6 2 6 ) F E E D D IR E C T IO N 1 3.5 0 (.5 32 ) 1 2.8 0 (.5 04 ) 2 7 .4 0 (1 .0 79 ) 2 3 .9 0 (.9 4 1) 4 3 3 0 .0 0 (1 4 .1 7 3) M A X. 6 0 .0 0 (2 .3 6 2) M IN . N OT ES : 1. C O M F O R M S T O E IA -4 1 8 . 2. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 3. D IM E N S IO N M E A S U R E D @ H U B . 4. IN C L U D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E . 2 6 .4 0 (1 .0 3 9 ) 2 4 .4 0 (.9 6 1 ) 3 3 0 .4 0 (1 .1 97 ) M AX . 4 Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR’s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.1/01 www.irf.com 9 Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/