IRG4BC30FD-SPBF

PD - 95970A IRG4BC30FD-SPbF Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE C VCES = 600V Features • Fast: optimized for medium operating frequencies (1-5 kHz in hard switching, >20kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations. • Lead-Free VCE(on) typ. = 1.59V G @VGE = 15V, IC = 17A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available. • IGBT's optimized for specific application conditions. • HEXFRED diodes optimized for performance with IGBT's. Minimized recovery characteristics require less/no snubbing. • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's. D2Pak Absolute Maximum Ratings Parameter Max. Units V VCES Collector-to-Emitter Voltage 600 IC @ TC = 25°C Continuous Collector Current 31 IC @ TC = 100°C ICM Continuous Collector Current Pulse Collector Current (Ref.Fig.C.T.5) ILM Clamped Inductive Load current IF @ TC = 100°C Diode Continuous Forward Current 12 IFM Diode Maximum Forward Current 120 d 17 c A 124 124 VGE Gate-to-Emitter Voltage ±20 V PD @ TC = 25°C Maximum Power Dissipation 100 W PD @ TC = 100°C Maximum Power Dissipation Operating Junction and TJ 42 TSTG -55 to +150 °C Storage Temperature Range Thermal / Mechanical Characteristics Parameter RθJC Junction-to-Case- IGBT RθCS Case-to-Sink, flat, greased surface RθJA Junction-to-Ambient (PCB Mounted,steady state) Wt Weight www.irf.com g Min. Typ. Max. Units ––– ––– 1.2 °C/W ––– 0.50 ––– ––– ––– 40 ––– 2.0 (0.07) ––– g (oz.) 1 01/27/10 IRG4BC30FD-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter e V(BR)CES Collector-to-Emitter Breakdown Voltage ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Voltage Min. Typ. Max. Units 600 — — — 0.69 — — 1.59 1.8 — 1.99 — — 1.7 — VGE(th) Gate Threshold Voltage 3.0 — 6.0 ∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -11 — gfe ICES Forward Transconductance Zero Gate Voltage Collector Current 6.1 10 — — — 250 — — 2500 — 1.4 1.7 — 1.3 1.6 — — ±100 VFM f Diode Forward Voltage Drop IGES Gate-to-Emitter Leakage Current V Conditions VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 1mA IC = 17A V VGE = 15V IC = 31A See Fig. 2, 5 IC = 17A, TJ = 150°C V VCE = VGE, IC = 250µA mV/°C VCE = VGE, IC = 250µA S VCE = 100V, IC = 17A µA VGE = 0V, VCE = 600V V IF = 12A VGE = 0V, VCE = 600V, TJ = 150°C See Fig. 13 IF = 12A, TJ = 150°C nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Qg Total Gate Charge (turn-on) Conditions Min. Typ. Max. Units — 51 IC = 17A 77 VCC = 400V Qge Gate-to-Emitter Charge (turn-on) — 7.9 12 Qgc Gate-to-Collector Charge (turn-on) — 19 28 td(on) Turn-On delay time — 42 — tr Rise time — 26 — td(off) Turn-Off delay time — 230 350 VGE = 15V, RG = 23Ω tf Fall time — 160 230 Energy losses inlcude "tail" and Eon Turn-On Switching Loss — 0.63 — Eoff Turn-Off Switching Loss — 1.39 — Ets Total Switching Loss — 2.02 3.9 td(on) Turn-On delay time — 42 — tr Rise time — 27 — td(off) Turn-Off delay time — 310 — tf Fall time — 310 — Ets Total Switching Loss — 3.2 — mJ diode reverse recovery. LE Internal Emitter Inductance — 7.5 — nH Cies Input Capacitance — 1100 — Measured 5mm from package VGE = 0V — 74 — pF VCC = 30V ns TJ = 25°C Coes Output Capacitance Cres Reverse Transfer Capacitance — 14 — trr Diode Reverse Recovery Time — 42 60 — 80 120 6.0 Irr Diode Peak Reverse Recovery Current — 3.5 — 5.6 10 Qrr Diode Reverse Recovery Charge — 80 180 220 600 di(rec)M/dt Diode Peak Rate of Fall of Recovery — 180 — During tb — 120 — 2 nC See Fig. 8 VGE = 15V TJ = 25°C ns IC = 17A, VCC = 480V diode reverse recovery. mJ See Fig. 9, 10, 11, 18 TJ = 150°C ns See Fig. 9,10,11,18 IC = 17A, VCC = 480V VGE = 15V, RG = 23Ω Energy losses inlcude "tail" and See Fig. 7 f = 1.0MHz TJ = 125°C A TJ = 25°C nC TJ = 25°C TJ = 125°C TJ = 125°C A/µs TJ = 25°C TJ = 125°C See Fig. 14 IF = 12A See Fig. 15 VR = 200V See Fig. 16 di/dt 200A/µs See Fig. 17 www.irf.com IRG4BC30FD-SPbF www.irf.com 3 IRG4BC30FD-SPbF 4 www.irf.com IRG4BC30FD-SPbF www.irf.com 5 IRG4BC30FD-SPbF 6 www.irf.com IRG4BC30FD-SPbF www.irf.com 7 IRG4BC30FD-SPbF 90% Vge Same type device as D.U.T. +Vge Vce 430µF 80% of Vce D.U.T. Ic 90% Ic 10% Vce Ic 5% Ic td(off) tf Eoff = Fig. 18a - Test Circuit for Measurement of ∫ t1+5µS Vce icIcdtdt Vce t1 ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf GATE VOLTAGE D.U.T. 10% +Vg trr Ic Qrr = tx DUT VOLTAGE AND CURRENT Vce 10% Ic 90% Ic tr td(on) 10% Irr Ipk Vpk Vcc Irr Ic DIODE RECOVERY WAVEFORMS 5% Vce t1 ∫ t2 VceieIcdt dt Eon = Vce t1 t2 DIODE REVERSE RECOVERY ENERGY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ +Vg 10% Vcc Vcc trr id Ic dtdt tx ∫ t4 Erec = Vd VdidIcdt dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4BC30FD-SPbF Vg GATE SIGNAL DEVICE UNDER TEST CURRENT D.U.T. VOLTAGE IN D.U.T. CURRENT IN D1 t0 t1 t2 Fig.18e - Macro Waveforms for Figure 18a's Test Circuit RL = VCC ICM D.U.T. L 1000V Vc* 50V 6000µF 100V 0 - VCC 480µF Pulsed Collector Current Test Circuit Fig. 19 - Clamped Inductive Load Test Circuit www.irf.com Fig. 20 - Pulsed Collector Current Test Circuit 9 IRG4BC30FD-SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ /27&2'( $66(0%/('21:: ,17+($66(0%/