IRG4BC30S-SPBF

PD - 95786A IRG4BC30S-SPbF Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard: optimized for minimum saturation voltage and low operating frequencies (< 1kHz) • Generation 4 IGBT design provides tight parameter distribution and high efficiency • Lead-Free VCES = 600V VCE(on) typ. = 1.4V G @VGE = 15V, IC = 18A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions D2Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. Units 600 34 18 68 68 ±20 10 100 42 -55 to +150 V A V mJ W °C 300 (0.063 in. (1.6mm) from case ) Thermal Resistance RθJC RθCS RθJA Wt www.irf.com Parameter Typ. Max. Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight ––– 0.50 ––– 1.44 1.2 ––– 40 ––– Units °C/W g (oz) 1 02/05/10 IRG4BC30S-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) ∆V(BR)CES/∆TJ Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage „ Temperature Coeff. of Breakdown Voltage VCE(ON) Collector-to-Emitter Saturation Voltage V(BR)CES V(BR)ECS VGE(th) Gate Threshold Voltage ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage gfe Forward Transconductance … ICES Zero Gate Voltage Collector Current IGES Gate-to-Emitter Leakage Current Min. 600 18 — — — — 3.0 — 6.0 — — — — Typ. Max. Units Conditions — — V VGE = 0V, IC = 250µA — — V VGE = 0V, IC = 1.0A 0.75 — V/°C VGE = 0V, IC = 1.0mA 1.40 1.6 IC = 18A VGE = 15V 1.84 — IC = 34A See Fig. 2, 5 V 1.45 — IC = 18A , TJ = 150°C — 6.0 VCE = VGE, IC = 250µA -11 — mV/°C VCE = VGE, IC = 250µA 11 — S VCE = 100V, IC = 18A — 250 VGE = 0V, VCE = 600V µA — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — 1000 VGE = 0V, VCE = 600V, TJ = 150°C — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Q ge Qgc td(on) tr td(off) tf E on Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. Max. Units Conditions 50 75 IC = 18A 7.3 11 nC VCC = 400V See Fig. 8 17 26 VGE = 15V 22 — 18 — TJ = 25°C ns 540 810 IC = 18A, VCC = 480V 390 590 VGE = 15V, RG = 23Ω 0.26 — Energy losses include "tail" 3.45 — mJ See Fig. 9, 10, 14 3.71 5.6 21 — TJ = 150°C, 19 — IC = 18A, VCC = 480V ns 790 — VGE = 15V, RG = 23Ω 760 — Energy losses include "tail" 6.55 — mJ See Fig. 11, 14 7.5 — nH Measured 5mm from package 1100 — VGE = 0V 72 — pF VCC = 30V See Fig. 7 13 — ƒ = 1.0MHz Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature (See fig. 13b). ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a). „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30S-SPbF 50 For both: 40 Load Current ( A ) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 90°C Gate drive as specified I Clamp voltage: 80% of rated Power Dissipation = 21 W 30 Square wave: 60% of rated voltage 20 I 10 Ideal diodes A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 o C TJ = 150 o C 10 1 V GE = 15V 20µs PULSE WIDTH 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C, Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 TJ = 150 oC 10 TJ = 25 oC 1 0.1 V CC = 50V 5µs PULSE WIDTH 5 6 7 8 9 10 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4BC30S-SPbF 35 VCE , Collector-to-Emitter Voltage(V) 3.0 Maximum DC Collector Current(A) 30 25 20 15 10 5 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) VGE = 15V 80 us PULSE WIDTH IC = 36 A 2.5 2.0 IC = 18 A 1.5 IC = 9.09AA 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 0.05 0.02 0.01 t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.0001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30S-SPbF 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 2000 1500 Cies 1000 500 Coes Cres 0 1 10 16 12 8 4 0 100 VCE , Collector-to-Emitter Voltage (V) Total Switching Losses (mJ) Total Switching Losses (mJ) 100 V CC = 480V V GE = 15V TJ = 25 ° C 3.76 I C = 18A 3.72 3.68 3.64 10 20 30 40 RG , Gate Resistance (Ohm) Ω Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 10 20 30 40 50 60 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 3.80 0 0 QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 3.60 VCC = 400V I C = 18A 50 RG = 23Ohm Ω VGE = 15V VCC = 480V IC = 36 A 10 IC = 18 A A IC = 9.0 9A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30S-SPbF RG TJ VCC 12.0 VGE 1000 = 23Ohm Ω = 150° C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 15.0 VGE = 20V T J = 125 oC 100 9.0 6.0 3.0 0.0 0 10 20 30 40 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 50 10 1 SAFE OPERATING AREA 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC30S-SPbF RL = VCC ICM L D.U.T. VC * 50V 1000V 480µF 0 - VCC c d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Pulsed Collector Current Test Circuit Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L Driver* D.U.T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V c d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4BC30S-SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7+,6,6$1,5)6:,7+ 3$57180%(5 /27&2'( ,17(51$7,21$/ $66 (0%/('21:: 5(&7,),(5 )6 /2*2 ,17+($66(0%/