IRG4BC30U-SPBF

PD - 95692A IRG4BC30U-SPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package • Lead-Free VCES = 600V VCE(on) typ. = 1.95V G @VGE = 15V, IC = 12A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's D2Pak Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy ƒ Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range 600 23 12 92 92 ± 20 10 100 42 -55 to + 150 V A V mJ W Thermal Resistance Parameter RθJC RθJA Junction-to-Case Junction-to-Ambient, ( PCB Mounted,steady-state)* Typ. Max. Units ––– ––– 1.2 40 °C/W * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 02/05/10 IRG4BC30U-SPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA V(BR)CES V(BR)ECS Emitter-to-Collector Breakdown Voltage „ 18 — — V VGE = 0V, IC = 1.0A V/°C VGE = 0V, IC = 1.0mA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.63 — — 1.95 2.1 IC = 12A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 2.52 — IC = 23A See Fig.2, 5 V — 2.09 — IC = 12A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance … 3.1 8.6 — S VCE = 100V, IC = 12A — — 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 50 8.1 18 17 9.6 78 97 0.16 0.20 0.36 20 13 180 140 0.73 7.5 1100 73 14 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig.8 27 VGE = 15V — — TJ = 25°C ns 120 IC = 12A, VCC = 480V 150 VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 0.50 — TJ = 150°C, — IC = 12A, VCC = 480V ns — VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig.7 — ƒ = 1.0MHz Notes:  Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) ‚ VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) „ Pulse width ≤ 80µs; duty factor ≤ 0.1%. … Pulse width 5.0µs, single shot. ƒ Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30U-SPbF 6.0 For both: 5.0 Load Current (A) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink= 55°C Gate drive as specified Power Dissipation = 1.75W Clamp voltage: 80% of rated 4.0 Square wave: 3.0 60% of rated voltage 2.0 1.0 Ideal diodes A 0.0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 TJ = 25°C TJ = 150°C 10 1 VGE = 15V 20µs PULSE WIDTH A 0.1 0.1 1 10 IC , Collector-to-Emitter Current (A) IC , Collector-to-Emitter Current (A) 100 TJ = 150°C 10 TJ = 25°C 1 V CC = 10V 5µs PULSE WIDTH A 0.1 5 6 7 8 9 10 11 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 12 3 25 3.0 V GE = 15V VCE , Collector-to-Emitter Voltage (V) Maximum DC Collector Current (A IRG4BC30U-SPbF 20 15 10 5 A 0 25 50 75 100 125 V GE = 15V 80µs PULSE WIDTH IC = 24A 2.5 IC = 12A 2.0 I C = 6.0A A 1.5 -60 150 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) TC , Case Temperature (°C) Fig. 4 - Maximum Collector Current vs.Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 0.01 0.00001 t 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 /t 1 t2 2 2. Peak TJ = PDM x Z thJC + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30U-SPbF 20 V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc 1600 VGE , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 2000 Cies 1200 800 Coes 400 Cres 16 12 A 0 1 10 VCE = 400V I C = 12A 8 4 A 0 100 0 10 VCE, Collector-to-Emitter Voltage (V) 10 = 480V = 15V = 25°C = 12A 0.4 0.3 A 0.2 0 10 20 30 40 50 60 R G , Gate Resistance (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 40 50 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) VCC VGE TJ IC 30 Qg , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.5 20 RG = 23 Ω V GE = 15V V CC = 480V IC = 24A 1 I C = 12A I C = 6.0A A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30U-SPbF RG TJ V CC V GE 1.2 1000 = 23 Ω = 150°C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 1.6 0.8 0.4 A 0.0 0 10 20 I C , Collector-to-Emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 30 VGE = 20V GE TJ = 125°C 100 SAFE OPERATING AREA 10 1 0.1 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC30U-SPbF RL = VCC ICM L D.U.T. VC * 50V 1000V 0 - VCC c 480µF d * Driver same type as D.U.T.; Vc = 80% of Vce(max) * Note: Due to the 50V power supply, pulse width and inductor will increase to obtain rated Id. Pulsed Collector Current Test Circuit Fig. 13b - Pulsed Collector Fig. 13a - Clamped Inductive Current Test Circuit Load Test Circuit IC L Driver* D.U.T. VC Test Circuit 50V 1000V c Fig. 14a - Switching Loss d e * Driver same type as D.U.T., VC = 480V c d 90% e VC 10% 90% Fig. 14b - Switching Loss t d(off) 10% I C 5% Waveforms tf tr t d(on) t=5µs E on E off E ts = (Eon +Eoff ) www.irf.com 7 IRG4BC30U-SPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information 7 +, 6,6$1,5 )  6:, 7+ 3$57 180 % (5 /2 7&2' (  ,17 (5 1$7 ,21 $/ 5(&7 ,),( 5 $66 (0 % /('2 1::    )  6 /2 *2 ,17+ ($6 6(0 % /