IRG4BC30U

PD - 91452E IRG4BC30U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB package VCES = 600V VCE(on) typ. = 1.95V G @VGE = 15V, IC = 12A E n-channel Benefits • Generation 4 IGBTs offer highest efficiency available • IGBTs optimized for specified application conditions • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs TO-220AB Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw. 600 23 12 92 92 ± 20 10 100 42 -55 to + 150 V A V mJ W °C 300 (0.063 in. (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.50 ––– 2 (0.07) 1.2 ––– 80 ––– Units °C/W g (oz) 1 4/17/2000 IRG4BC30U Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 250µA Emitter-to-Collector Breakdown Voltage T 18 — — V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.63 — V/°C VGE = 0V, IC = 1.0mA — 1.95 2.1 IC = 12A VGE = 15V VCE(ON) Collector-to-Emitter Saturation Voltage — 2.52 — IC = 23A See Fig.2, 5 V — 2.09 — IC = 12A , TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 — 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -13 — mV/°C VCE = VGE, IC = 250µA gfe Forward Transconductance U 3.1 8.6 — S VCE = 100V, IC = 12A — — 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current µA — — 2.0 VGE = 0V, VCE = 10V, TJ = 25°C — — 1000 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V V(BR)CES V(BR)ECS Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — — — — — — — — — — Typ. 50 8.1 18 17 9.6 78 97 0.16 0.20 0.36 20 13 180 140 0.73 7.5 1100 73 14 Max. Units Conditions 75 IC = 12A 12 nC VCC = 400V See Fig.8 27 VGE = 15V — — TJ = 25°C ns 120 IC = 12A, VCC = 480V 150 VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 10, 11, 13, 14 0.50 — TJ = 150°C, — IC = 12A, VCC = 480V ns — VGE = 15V, RG = 23Ω — Energy losses include "tail" — mJ See Fig. 13, 14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig.7 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω, (See fig. 13a) T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. S Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30U 35 T ria n g u la r w a ve : F o r b o th : D uty cy cle: 50% T J = 125°C T s ink = 90°C Gate drive as s pecified Load Current ( A ) 30 25 I C la m p vo l ta g e : 8 0 % o f ra te d P o w e r D is s ip a tio n = 2 1 W 20 S q u a re wave : 6 0 % o f ra te d v o lta g e 15 I 10 Id e al d io de s 5 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=IRMS of fundamental; for triangular wave, I=IPK) 100 I C , C o lle cto r-to -E m itte r C u rre n t (A ) I C , C olle cto r-to -E m itte r C u rre n t (A ) 100 TJ = 2 5 ° C T J = 1 5 0 °C 10 1 VG E = 1 5 V 2 0 µ s P U L S E W ID T H A 0.1 0.1 1 10 T J = 1 5 0 °C 10 T J = 2 5 °C 1 V CC = 10V 5 µ s P U L S E W ID T H 0.1 5 6 7 8 9 10 11 V C E , C o lle cto r-to -E m itte r V o lta g e (V ) VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com A 12 3 3.0 25 V GE = 15V V C E , C ollector-to-Em itter Volta ge (V) M a xim u m D C C o lle c to r C u rre n t (A IRG4BC30U 20 15 10 5 A 0 25 50 75 100 125 VGE = 15V 8 0 µ s P U L S E W ID T H IC = 2 4 A 2.5 IC = 1 2 A 2.0 I C = 6 .0 A A 1.5 -60 150 -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n T e m p e ra tu re (°C ) TC , C a s e Te m p e ra tu re (°C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature T he rm al R e sp ons e (Z thJ C ) 10 1 D = 0 .5 0 0 .2 0 PD M 0 .1 0 0 .1 0 .0 1 0 .0 0 0 0 1 t 0 .0 5 0 .0 2 0 .0 1 1 t2 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 2 . P e a k T J = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30U V GE = C ie s = C re s = C oes = 1600 20 0V , f = 1MHz C g e + C g c , C ce S H O R TE D C gc C ce + C g c V G E , G ate -to -E m itter V olta g e (V ) C , C a pac ita n ce (pF ) 2000 C ie s 1200 800 C oes 400 C re s 16 12 A 0 1 10 VCE = 400V I C = 12A 8 4 A 0 100 0 10 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) 10 = 480V = 15V = 2 5 °C = 12A 0.3 A 0.2 10 20 30 40 50 60 R G , G a te R e s ista n ce ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 50 = 23 Ω V GE = 15V V CC = 480V RG 0.4 0 40 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage T otal S witch ing L os se s (m J ) T otal S witch ing Lo ss e s (m J ) VCC VGE TJ IC 30 Q g , To ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.5 20 IC = 2 4 A 1 IC = 12A I C = 6 .0 A A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Ju n c tio n T e m p e ra tu re (°C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4BC30U RG TJ V CC V GE 1.2 1000 = 23 Ω = 1 5 0 °C = 480V = 15V I C , C ollector-to-E m itter C urrent (A ) T ota l S witch in g Los se s (m J) 1.6 0.8 0.4 A 0.0 0 10 20 I C , C o lle c to r-to -E m itte r C u rre n t (A ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 30 VGGE E= 2 0V T J = 12 5 °C 100 S A FE O P E R A TIN G A R E A 10 1 0 .1 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA www.irf.com IRG4BC30U L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4BC30U Case Outline and Dimensions — TO-220AB 2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 ) 1 0 .5 4 (.41 5 ) 1 0 .2 9 (.40 5 ) 4 3.78 (.149) 3.54 (.139) -A- 1.32 (.052) 1.22 (.048) 6.47 (.255 ) 6.10 (.240 ) 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 ) 1.15 (.045) M IN 1 2 1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 2 0 A B . LEAD 1234- 3 3X 1 .4 0 (.0 5 5 ) 3 X 1 .1 5 (.0 4 5 ) -B - 4.69 (.185) 4.20 (.165) 3.96 (.160) 3.55 (.140) A S S IG N M E N T S GA TE C O L LE C T O R E M IT T E R C O L LE C T O R 4.06 (.160 ) 3.55 (.140 ) 3X 0.93 (.037) 0.69 (.027) 0 .3 6 (.01 4 ) M B A M 2 .5 4 (.1 0 0) 3X 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 2X CONFORMS TO JEDEC OUTLINE TO-220AB D im e ns io ns in M illim e ters a nd (In c he s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/