PD -95174A
IRG4BC40KPbF
Short Circuit Rated
UltraFast IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
Short Circuit Rated UltraFast: optimized for high
operating frequencies >5.0KHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency
than Generation 3
Industry standard TO-247AC package
Lead-Free
VCES = 600V
VCE(on) typ. = 2.1V
G
@VGE = 15V, IC = 25A
E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
TO-220AB
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
tsc
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
42
25
84
84
10
±20
15
160
65
-55 to +150
V
A
µs
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
0.50
2 (0.07)
0.77
80
Units
°C/W
g (oz)
1
02/17/10
IRG4BC40KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage 18
Temperature Coeff. of Breakdown Voltage 0.46
2.10
Collector-to-Emitter Saturation Voltage
2.70
2.14
Gate Threshold Voltage
3.0
Temperature Coeff. of Threshold Voltage
-13
Forward Transconductance
7.0
14
Zero Gate Voltage Collector Current
Gate-to-Emitter Leakage Current
Max. Units
Conditions
V
VGE = 0V, IC = 250µA
V
VGE = 0V, IC = 1.0A
V/°C VGE = 0V, IC = 1.0mA
2.6
IC = 25A
VGE = 15V
IC = 42A
See Fig.2, 5
V
IC = 25A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 250µA
S
VCE = 100 V, IC = 25A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
2000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
t d(on)
tr
td(off)
tf
Eon
Eoff
Ets
t sc
t d(on)
tr
t d(off)
tf
E ts
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
10
Typ.
120
16
51
30
15
140
140
0.62
0.33
0.95
30
18
190
150
1.9
13
1600
130
55
Max. Units
Conditions
180
IC = 25A
24
nC
VCC = 400V
See Fig.8
77
VGE = 15V
TJ = 25°C
ns
210
IC = 25A, VCC = 480V
210
VGE = 15V, RG = 10Ω
Energy losses include "tail"
mJ See Fig. 9,10,14
1.4
µs
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
TJ = 150°C,
IC = 25A, VCC = 480V
ns
VGE = 15V, RG = 10Ω
Energy losses include "tail"
mJ See Fig. 11,14
nH
Measured 5mm from package
VGE = 0V
pF
VCC = 30V
See Fig. 7
= 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
Repetitive rating; pulse width limited by maximum
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
max. junction temperature. ( See fig. 13b )
(See fig. 13a)
2
junction temperature.
Pulse width 5.0µs, single shot.
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IRG4BC40KPbF
50
For both:
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
40
Clamp voltage:
80% of rated
Load Current (A)
Power Dissipation = 28W
30
Square wave:
60% of rated
voltage
20
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
TJ = 150 o C
10
TJ = 25 oC
V GE = 15V
20µs PULSE WIDTH
1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
IC , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
100
TJ = 150°C
TJ = 25°C
10
V CC = 50V
5µs PULSE WIDTH A
1
5
7
9
11
VGE, Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC40KPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
50
40
30
20
10
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
VGE = 15V
80 us PULSE WIDTH
IC = 50 A
4.0
3.0
IC = 25 A
IC =12.5 A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
1
0.50
0.20
0.1
0.10
PDM
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC40KPbF
3000
VGE , Gate-to-Emitter Voltage (V)
2500
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
2000
Cies
1500
1000
500
Coes
Cres
0
1
10
16
12
8
4
0
100
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
1.60 I C = 25A
1.40
1.20
1.00
10
20
30
40
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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20
40
60
80
100
120
140
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
1.80
0
0
QG , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.80
VCC = 400V
I C = 25A
50
RG = 10Ohm
Ω
VGE = 15V
VCC = 480V
IC = 50 A
IC = 25 A
IC = 12.5 A
1
0.1
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC40KPbF
RG
TJ
VCC
4.0 VGE
1000
= 10Ohm
Ω
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
5.0
VGE = 20V
T J = 125 oC
100
3.0
2.0
1.0
0.0
0
10
20
30
40
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
50
10
1
SAFE OPERATING AREA
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4BC40KPbF
RL = VCC
ICM
L
D.U.T.
VC *
50V
0 - VCC
1000V
c
480µF
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Pulsed Collector Current
Test Circuit
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4BC40KPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
(;$03/( 7+,6,6$1,5)
/27&2'(
$66(0%/('21::
,17+($66(0%/
