IRG4CC30UB

PD- 91771 IRG4CC30UB IRG4CC30UB IGBT Die in Wafer Form C 600 V Size 3 Ultra-Fast Speed 6" Wafer G E Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) 2.2V Max. 600V Min. 3.0V Min., 6.0V Max. 250µA Max. ± 1.1µA Max. Test Conditions IC = 6A, TJ = 25°C, VGE = 15V TJ = 25°C, ICES = 250µA, V GE = 0V VGE = VCE , TJ =25°C, IC =250µA TJ = 25°C, VCE = 600V TJ = 25°C, VGE = +/- 20V Mechanical Data Norminal Backmetal Composition, Thickness: Norminal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Cr-Ni / V-Ag (1 kA-2kA-2.5kA ) 99% Al, 1% Si (3 microns) 0.141" x 0.164" 150mm, with std. < 100 > flat .015" + / -.003" 01-5225 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination Reference Standard IR packaged part ( for design ) : IRG4BC30U Die Outline www.irf.com 1 09/27/07