IRG4IBC10UD

PD - 93765 IRG4IBC10UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Co-Pack IGBT C VCES = 600V Features • UltraFast: Optimized for high operating up to 80 kHz in hard switching, > 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than previous generation • IGBT co-packaged with HEXFRED® ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-220 Full-Pak VCE(on) typ. = 2.15V G @VGE = 15V, IC = 5.0A E tf(typ.) = 140ns N-channel Benefits • Generation 4 IGBTs offer highest efficiencies available • IGBTs optimized for specific application conditions • HEXFRED® diodes optimized for performance with IGBTs Minimized recovery characteristics require less/no snubbing TO-220 Full-Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VISOL VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current  Clamped Inductive Load Current ‚ Diode Continuous Forward Current Diode Maximum Forward Current RMS Isolated Voltage, Terminal to case, t=1min Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec Mounting Torque, 6-32 or M3 Screw Max. Units 600 6.8 3.9 27 27 3.9 27 2500 ± 20 25 10 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– ––– ––– 2.1 (0.075) 5.0 9.0 65 ––– Units °C/W g (oz) 1 10/27/99 IRG4IBC10UD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES DV(BR)CES/DTJ VCE(on) VGE(th) DVGE(th)/DTJ gfe ICES VFM IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage ƒ 600 — Temperature Coeff. of Breakdown Voltage — 0.54 Collector-to-Emitter Saturation Voltage — 2.15 — 2.61 — 2.30 Gate Threshold Voltage „ 3.0 — Temperature Coeff. of Threshold Voltage — -8.7 Forward Transconductance 2.8 4.2 Zero Gate Voltage Collector Current — — — — Diode Forward Voltage Drop — 1.5 — 1.4 Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V/°C VGE = 0V, I C = 1.0mA 2.6 IC = 5.0A VGE = 15V See Fig. 2, 5 — V IC = 8.5A — IC = 5.0A, TJ = 150°C 6.0 VCE = VGE, I C = 250µA — mV/°C VCE = VGE, I C = 250µA — S VCE = 100V, IC = 5.0A 250 µA VGE = 0V, V CE = 600V 1000 VGE = 0V, VCE = 600V, TJ = 150°C 1.8 V IC = 4.0A See Fig. 13 1.7 IC = 4.0A, TJ = 125°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Q gc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr I rr Q rr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. — — — — — — — — — — — — — — — — — — — — — Diode Peak Reverse Recovery Current — — Diode Reverse Recovery Charge — — Diode Peak Rate of Fall of Recovery — During tb — Typ. 15 2.6 5.8 40 16 87 140 0.14 0.12 0.26 38 18 95 250 0.45 7.5 270 21 3.5 28 38 2.9 3.7 40 70 280 235 Max. Units Conditions 22 IC = 5.0A 4.0 nC VCC = 400V See Fig. 8 8.7 VGE = 15V — TJ = 25°C — ns IC = 5.0A, VCC = 480V 130 VGE = 15V, RG = 100W 210 Energy losses include "tail" and — diode reverse recovery. — mJ See Fig. 9, 10, 18 0.33 — TJ = 150°C, See Fig. 11, 18 — ns IC = 5.0A, VCC = 480V — VGE = 15V, RG = 100W — Energy losses include "tail" and — mJ diode reverse recovery. — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz 42 ns TJ = 25°C See Fig. 57 TJ = 125°C 14 IF = 4.0A 5.2 A TJ = 25°C See Fig. 6.7 TJ = 125°C 15 VR = 200V 60 nC TJ = 25°C See Fig. 105 TJ = 125°C 16 di/dt = 200A/µs — A/µs TJ = 25°C See Fig. — TJ = 125°C 17 Details of note  through „ are on the last page 2 www.irf.com IRG4IBC10UD 6.0 For both: Duty cycle : 50% Tj = 125°C Tsink = 90°C Gate drive as specified Power Dissipation = 7.0W Load Current ( A ) 5.0 4.0 Square w ave: 60% of rated voltage 3.0 2.0 Ideal diodes 1.0 0.0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 oC TJ = 150 oC 10 1 V GE = 15V 20µs PULSE WIDTH 0.1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) 100 10 TJ = 150 o C TJ = 25 o C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 12 13 14 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4IBC10UD 5.0 VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 8 6 4 2 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 10 A 4.0 3.0 IC = IC = 2.5 A 2.0 1.0 -60 -40 -20 TC , Case Temperature ( °C) 5A 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response ( Z thJC ) 10 D = 0.50 0.20 1 0.10 0.05 PDM 0.02 0.01 0.1 t SINGLE PULSE ( THERMAL RESPONSE ) 1 t2 Notes: 1. Duty factor D = t 1 /t 2 2. Peak TJ = P D Mx Z thJC + T C 0.01 1E-005 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4IBC10UD 500 VGE , Gate-to-Emitter Voltage (V) 400 C, Capacitance (pF) 20 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc Cies 300 200 Coes 100 VCC = 400V I C = 5.0A 16 12 8 4 Cres 0 0 1 10 100 0 VCE , Collector-to-Emitter Voltage (V) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 10 V CC = 480V V GE = 15V TJ = 25 ° C I C = 5.0A 0.25 0.20 50 60 70 80 90 100 RG , Gate Resistance (Ohm) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 8 12 16 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 0.30 4 QG , Total Gate Charge (nC) Ω RG =100 Ohm VGE = 15V VCC = 480V IC = 10 A 1 IC = 5.0A 5A IC = 2.5 A 0.1 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4IBC10UD RG TJ 1.2 VCC VGE 100 = 100Ω Ohm = 150 ° C = 480V = 15V I C, Collector Current (A) Total Switching Losses (mJ) 1.4 1.0 0.8 0.6 0.4 VGE = 20V T J = 125 o C 10 0.2 SAFE OPERATING AREA 1 0.0 0 2 4 6 8 1 10 10 100 1000 VCE, Collector-to-Emitter Voltage (V) I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Instantaneous Forward Current ( A ) 100 TJ = 150°C 10 TJ = 125°C T = 25°C J 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 F orward V oltage D rop - VVFMF(V) M(V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4IBC10UD 14 50 I F = 8.0A 45 12 I F = 4.0A VR = 20 0V T J = 1 25 °C T J = 2 5°C I F = 8.0A 10 I F = 4.0A Irr- ( A) trr- (nC) 40 35 8 6 30 4 25 2 VR = 2 00 V T J = 1 2 5°C T J = 2 5 °C 20 100 di f /dt - (A/µ s) 0 100 1000 1000 di f /dt - (A/µ s) Fig. 14 - Typical Reverse Recovery vs. dif/dt Fig. 15 - Typical Recovery Current vs. dif/dt 1000 200 VR = 20 0V T J = 1 25 °C T J = 2 5°C VR = 2 00 V T J = 1 25°C T J = 2 5°C 160 I F = 8.0A I F = 4.0A Qrr- (nC) 120 di (rec) M/dt- (A /µs) I F = 8.0A 80 I F = 4.0A 40 0 100 di f /dt - (A/µ s) 1000 Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com A 100 100 1000 di f /dt - (A/µ s ) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4IBC10UD 90% Vge Same ty pe device as D .U.T. +Vge V ce 430µF 80% of Vce D .U .T. Ic 9 0 % Ic 10% Vce Ic 5 % Ic td (o ff) tf E o ff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e icIcd tdt Vce t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id t Ic ddt tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 ce ieIcd t dt E on = V Vce t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 VVc d idIcd t dt t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4IBC10UD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Fig. 18e - Macro Waveforms for Figure 18a's Test Circuit D.U.T. L 1000V Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Fig. 19 - Clamped Inductive Load Test Circuit www.irf.com Fig. 20 - Pulsed Collector Current Test Circuit 9 IRG4IBC10UD TO-220 Full-Pak Package Outline 1 0 .6 0 (.4 1 7 ) 1 0 .4 0 (.4 0 9 ) ø 3 .4 0 (.1 3 3 ) 3 .1 0 (.1 2 3 ) 4 .8 0 (.1 8 9 ) 4 .6 0 (.1 8 1 ) -A 3 .7 0 (.1 4 5 ) 3 .2 0 (.1 2 6 ) 1 6 .0 0 (.6 3 0 ) 1 5 .8 0 (.6 2 2 ) 2 .8 0 (.1 1 0 ) 2 .6 0 (.1 0 2 ) L E A D ALEAD S S IG N ME NTS ASSIGMENTS 1 - G1-A GATE TE 2 - D2-R COLLECTOR A IN 3 - S3O EMITTER URCE 7 .1 0 (.2 8 0 ) 6 .7 0 (.2 6 3 ) 1 .1 5 (.0 4 5) M IN . NOTES : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4.5 M , 1 9 8 2 1 2 3 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 .3 0 (.1 3 0 ) 3 .1 0 (.1 2 2 ) -B - 1 3 .7 0 (.5 4 0 ) 1 3 .5 0 (.5 3 0 ) C A 1 .4 0 (.0 5 5 ) 3X 1 .0 5 (.0 4 2 ) 0 .9 0 (.0 35 ) 3 X 0 .7 0 (.0 28 ) 0 .2 5 (.0 1 0 ) 3X M A M B 2 .5 4 (.1 0 0 ) 2X 0 .4 8 (.0 1 9 ) 0 .4 4 (.0 1 7 ) 2 .8 5 (.1 1 2 ) 2 .6 5 (.1 0 4 ) D B M IN IM U M C R E E P A G E D IS T A N C E B E T W E E N A -B -C -D = 4 .8 0 (.1 89 ) Notes  Repetitive rating: VGE=20V; Pulse width limited by maximum junction temperature (figure 20) ‚ VCC=80%(VCES), VGE=20V, L=10µH, RG= 100Ω (figure 19) ƒ Pulse width ≤ 80µs, duty factor ≤ 0.1%. „ Pulse width 5.0µs, single shot. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 10/99 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/