PD - 95603B
IRG4IBC10UDPbF
UltraFast Co-Pack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
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C
UltraFast: Optimized for high operating up to
80 kHz in hard switching, >200 kHz in
resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
IGBT co-packaged with HEXFRED® ultrafast, ultrasoft recovery anti-parallel diodes for use in bridge
configurations
Industry standard TO-220 Full-Pak
Lead-Free
VCES = 600V
VCE(on) typ. = 2.15V
G
@VGE=15V, IC=5.0A
E
tf (typ.) = 140ns
n-channel
Benefits
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Generation 4 IGBTs offer highest efficiencies available
IGBTs optimized for specifica application conditions
HEXFRED® diodes optimized for performace with IGBTs
Minimized recovery characteristics require less/no
snubbing
TO-220AB
Absolute Maximum Ratings
Max.
Units
600
V
6.8
3.9
A
Continuous Collector, VGE @ 15V
Pulsed Collector Current
Clamped Inductive Load Current
27
27
Parameter
VCES
IC @ TC = 25°C
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, VGE @ 15V
IC @ TC = 100°C
ICM
ILM
IF@Tc = 100°C
IFM
VISOL
VGE
PD @TC = 25°C
PD @TC = 100°C
TJ
TSTG
c
d
d
3.9
27
2500
V
Gate-to-Emitter Voltage
Power Dissipation
±20
25
W
Power Dissipation
Operating Junction and
10
-55 to + 150
Diode Continuous Forward Current
Diode Maximum Forward Current
rms Isolated Voltage, Terminal to case, t=1min
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in.) (1.6mm from case)
10lb in (1.1N m)
x
x
N
Thermal Resistance
Parameter
RθJC
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
–––
–––
2.1 (0.075)
5.0
9.0
65
–––
Units
°C/W
g (oz)
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1
01/28/2011
IRG4IB10UDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
∆V(BR)CES/∆TJ Breakdown Voltage Temp. Coefficient
e
Min.
Typ. Max. Units
600
–––
–––
0.54
–––
–––
2.15
2.61
2.6
–––
Conditions
V VGE = 0V, ICE = 250µA
V/°C VGE = 0V, ICE = 1.0mA
VGE = 15V, ICE = 5.0A
VCE(on)
Collector-to-Emitter Saturation Voltage
–––
–––
VGE(th)
Gate Threshold Voltage
–––
3.0
2.30
–––
–––
6.0
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage Coefficient
Forward Transconductance
–––
2.8
-8.7
4.2
–––
–––
Collector-to-Emitter Leakage Current
–––
–––
–––
–––
250
1000
VFM
Diode Forward Voltage Drop
–––
–––
1.5
1.4
1.8
1.7
V
VCE = 600V, VGE = 0V, TJ = 150°C
IC = 4.0A
–––
–––
–––
–––
100
-100
nA
IC = 4.0A, TJ = 125°C
VGE = 20V
IGES
g
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
V
VGE = 15V, ICE = 8.5A
VGE = 15V, ICE = 5.0A, TJ = 150°C
V
VCE = VGE, ICE = 250µA
mV/°C
S VCE = 100V, ICE = 5.0A
µA VCE = 600V, VGE = 0V
VGE = -20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
VCE = 400V
IC = 5.0A
Total Gate Charge (turn-on)
–––
15
22
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge
–––
–––
2.6
5.8
4.0
8.7
Turn-On delay time
–––
40
–––
Rise time
Turn-Off delay time
–––
–––
16
87
–––
130
Fall time
Turn-On Switching Loss
–––
–––
140
0.14
210
–––
Turn-Off Switching Loss
Total Switching Loss
–––
–––
0.12
0.26
–––
0.33
Turn-On delay time
Rise time
–––
–––
38
18
–––
–––
Turn-Off delay time
Fall time
–––
–––
95
250
–––
–––
Total Switching Loss
Internal Emitter Inductance
–––
–––
0.45
7.5
–––
–––
mJ
nH
Input Capacitance
Output Capacitance
–––
–––
270
21
–––
–––
diode reverse recovery.
Measured 5mm from package
VGE = 0V
pF
VCE = 30V
Reverse Transfer Capacitance
Diode Reverse Recovery Time
–––
–––
3.5
28
–––
42
ns
Irr
Diode Peak Reverse Recovery Current
–––
–––
38
2.9
57
5.2
ƒ = 1.0MHz, See Fig. 7
TJ=25°C, See Fig. IF=4.0A, VR=200V
TJ=125°C
14
di/dt=200A/µs
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
–––
–––
–––
–––
–––
3.7
40
70
280
235
6.7
60
105
–––
–––
Qgc
td(on)
tr
td(off)
tf
E(on)
E(off)
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
nC
VGE = 15V, See Fig. 8
ns
IC = 5.0A, VCC = 480V
VGE = 15V, RG = 100Ω
TJ = 25°C
Energy losses include "tail" and
mJ
diode reverse recovery.
See Fig. 9, 10, 18
IC = 5.0A, VCC = 480V See Fig. 11, 18
ns
VGE = 15V, RG = 100Ω
TJ = 150°C
Energy losses include "tail" and
TJ=25°C, See Fig.
TJ=125°C
15
nC TJ=25°C, See Fig.
TJ=125°C
16
T
=25°C,
A/µs J
See Fig.
TJ=125°C
17
A
IF=4.0A, VR=200V
di/dt=200A/µs
IF=4.0A, VR=200V
di/dt=200A/µs
IF=4.0A, VR=200V
di/dt=200A/µs
Details of note through are on the last page
2
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IRG4IBC10UDPbF
7
LOAD CURRENT (A)
6
5
4
3
2
1
0
0.1
1
10
100
f, Frequency (KHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
TJ = 25 oC
10
TJ = 150 oC
1
0.1
V GE = 15V
20µs PULSE WIDTH
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C, Collector-to-Emitter Current (A)
I C, Collector-to-Emitter Current (A)
100
10
TJ = 150 o C
TJ = 25 oC
1
V CC = 50V
5µs PULSE WIDTH
5
6
7
8
9
10
11
12
13
14
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4IB10UDPbF
5.0
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
10
8
6
4
2
0
25
50
75
100
125
150
TC , Case Temperature ( ° C)
VGE = 15V
80 us PULSE WIDTH
IC = 10 A
4.0
3.0
IC =
5A
IC = 2.5 A
2.0
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
0.01
0.00001
0.02
0.01
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC10UDPbF
500
VGE , Gate-to-Emitter Voltage (V)
400
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
300
200
Coes
100
VCC = 400V
I C = 5.0A
16
12
8
4
Cres
0
0
1
10
100
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
V CC = 480V
V GE = 15V
TJ = 25 ° C
I C = 5.0A
0.25
0.20
50
60
70
80
90
100
RG , Gate Resistance (Ohm)
Fig. 9 - Typical Switching Losses vs. Gate Resistance
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4
8
12
16
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
0.30
0
QG , Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
RG = Ohm
VGE = 15V
VCC = 480V
IC = 10 A
1
IC =
5A
IC = 2.5 A
0.1
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4IB10UDPbF
RG
TJ
1.2 VCC
VGE
100
= 100Ω
Ohm
= 150 ° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
1.4
1.0
0.8
0.6
0.4
0.2
0.0
0
2
4
6
8
VGE = 20V
T J = 125 oC
10
1
10
SAFE OPERATING AREA
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Instantaneous Forward Current ( A )
100
TJ = 150°C
10
T = 125°C
J
T = 25°C
J
1
0.1
0.0
1.0
2.0
3.0
4.0
5.0
6.0
Forward
Forward Voltage
Voltage Drop
Drop -- VVFM
((V)
V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4IBC10UDPbF
50
14
I F = 8.0A
45
12
I F = 4.0A
10
I F = 8.0A
I F = 4.0A
Irr- ( A)
trr- (nC)
40
VR = 200V
TJ = 125°C
TJ = 25°C
35
8
6
30
4
25
2
VR = 200V
TJ = 125°C
TJ = 25°C
20
100
di f /dt - (A/µs)
0
100
1000
di f /dt - (A/µs)
1000
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
200
1000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
160
I F = 8.0A
di (rec) M/dt- (A /µs)
Qrr- (nC)
120
I F = 8.0A
I F = 4.0A
80
I F = 4.0A
40
0
100
di f /dt - (A/µs)
1000
Fig. 16 - Typical Stored Charge vs. dif/dt
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100
100
A
di f /dt - (A/µs)
1000
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,
7
IRG4IB10UDPbF
90% Vge
Same type
device as
D.U.T.
+Vge
Vce
430µF
80%
of Vce
D.U.T.
Ic
90% Ic
10% Vce
Ic
5% Ic
td(off)
tf
Eoff =
Fig. 18a - Test Circuit for Measurement of
t1+5µS
Vce ic dt
∫ Vce Ic dt
t1
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
GATE VOLTAGE D.U.T.
10% +Vg
trr
Ic
Qrr =
tx
DUT VOLTAGE
AND CURRENT
Vce
10% Ic
90% Ic
tr
td(on)
10% Irr
Ipk
Vpk
Vcc
Irr
Ic
DIODE RECOVERY
WAVEFORMS
5% Vce
t1
t2
VceieIcdt dt
Eon = Vce
t1
∫
t2
DIODE REVERSE
RECOVERY ENERGY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
+Vg
10% Vcc
Vcc
trr
id
Ic dtdt
tx
t4
Erec = Vd
VdidIcdt dt
t3
∫
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4IBC10UDPbF
Vg GATE SIGNAL
DEVICE UNDER TEST
CURRENT D.U.T.
VOLTAGE IN D.U.T.
CURRENT IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
0 - 480V
480V
4 X I C @25°C
50V
6000µF
100V
Figure 19. Clamped Inductive Load Test Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4IB10UDPbF
TO-220AB Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Full-Pak Part Marking Information
(;$03/( 7+,6,6$1,5),*
:,7+$66(0%/
