PD 91785A
IRG4IBC20W
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
• 2.5kV, 60s insulation voltage V
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Industry standard Isolated TO-220 FullpakTM
outline
C
VCES = 600V
VCE(on) typ. = 2.16V
G
@VGE = 15V, IC = 6.5A
E
n-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220 FULLPAK
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
11.8
6.2
52
52
± 20
200
34
14
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
Units
–––
–––
2.0 (0.07)
3.7
65
–––
°C/W
g (oz)
1
12/30/00
IRG4IBC20W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage T 18
—
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage —
0.48
— 2.16
VCE(ON)
Collector-to-Emitter Saturation Voltage
— 2.55
— 2.05
VGE(th)
Gate Threshold Voltage
3.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
—
-8.8
gfe
Forward Transconductance U
5.5
8.3
—
—
ICES
Zero Gate Voltage Collector Current
—
—
—
—
IGES
Gate-to-Emitter Leakage Current
—
—
V(BR)CES
V(BR)ECS
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
2.6
IC = 6.5A
VGE = 15V
—
IC = 13A
See Fig.2, 5
V
—
IC = 6.5A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100 V, IC = 6.5A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
26
38
IC = 6.5A
3.7 5.5
nC VCC = 400V
See Fig.8
10
15
VGE = 15V
22
—
14
—
TJ = 25°C
ns
110 160
IC = 6.5A, VCC = 480V
64
96
VGE = 15V, RG = 50Ω
0.06 —
Energy losses include "tail"
0.08 —
mJ See Fig. 9, 10, 14
0.14 0.2
21
—
TJ = 150°C,
15
—
IC = 6.5A, VCC = 480V
ns
150 —
VGE = 15V, RG = 50Ω
150 —
Energy losses include "tail"
0.34 —
mJ See Fig. 10, 11, 14
7.5
—
nH Measured 5mm from package
490 —
VGE = 0V
38
—
pF
VCC = 30V
See Fig. 7
8.8
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω,
(See fig. 13a)
S Repetitive rating; pulse width limited by maximum
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
V t = 60s, f = 60Hz
junction temperature.
2
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IRG4IBC20W
25
F o r b o th :
Tria n g u la r w a ve :
Duty cycle: 50%
TJ = 125° C
Tsink = 90°C
G ate drive as specified
20
C la m p vo lta g e :
8 0 % o f ra te d
Load Current ( A )
Po w e r D is s ip a tio n = 1 3 W
15
S qu are wave:
6 0 % o f ra te d
v o lta g e
10
5
Id e al d io de s
A
0
0.1
1
10
100
1000
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
I C , Collector-to-Emitter Current (A)
10
TJ = 150 ° C
TJ = 25 °C
V
= 15V
20µs PULSE WIDTH
GE
1
1
10
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
100
100
TJ = 150 °C
10
TJ = 25 °C
V
= 50V
5µs PULSE WIDTH
CC
1
5
6
7
9
10
11
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4IBC20W
12
3.0
V
= 15V
80 us PULSE WIDTH
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
GE
8
4
0
25
50
75
100
125
150
IC = 13 A
IC = 6.5 A
2.0
IC =3.25 A
1.0
-60 -40 -20
TC , Case Temperature ( ° C)
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (° C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
P DM
0.05
0.1
0.01
0.00001
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC20W
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
C, Capacitance (pF)
800
Cies
600
400
C
oes
200
Cres
20
VGE , Gate-to-Emitter Voltage (V)
1000
10
12
8
4
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
= 480V
= 15V
= 25 ° C
= 6.5A
0.14
0.13
0.12
0
10
20
30
40
RG , Gate Resistance (Ohm)
Ω
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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10
15
20
25
30
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
V CC
V GE
TJ
IC
5
Q G , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.15
VCC = 400V
I C = 6.5A
16
0
1
50
50Ω
RG = Ohm
VGE = 15V
VCC = 480V
IC = 13 A
1
IC = 6.5 A
IC =3.25 A
0.1
0.01
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature °( C )
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4IBC20W
0.6
RG
TJ
VCC
VGE
100
Ω
= 50
Ohm
= 150° C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
0.8
0.4
0.2
VGE = 20V
T J = 125 o C
10
SAFE OPERATING AREA
1
0.0
0
2
4
6
8
10
12
I C , Collector-to-emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
14
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4IBC20W
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 000V
480V
4 X IC@25°C
480µF
960V
Q
R
* D river sam e type as D.U.T .; Vc = 80% of Vce(m ax)
* N ote: Due to the 50V pow er supply, pulse w idth and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
90%
10%
S
VC
90%
Fig. 14b - Switching Loss
t d (o ff)
10%
I C 5%
Waveforms
tf
tr
t d (o n )
t=5µs
E on
E o ff
E ts = (E o n +E o ff )
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7
IRG4IBC20W
Case Outline TO-220 FULLPAK
1 0 .6 0 (.4 17 )
1 0 .4 0 (.4 09 )
ø
3.4 0 (.13 3)
3.1 0 (.12 3)
4 .80 (.1 89 )
4 .60 (.1 81 )
-A3.7 0 (.145 )
3.2 0 (.126 )
1 6.0 0 (.63 0)
1 5.8 0 (.62 2)
2 .8 0 (.1 10 )
2 .6 0 (.1 02 )
LE A D A S S IG N M E N TS
LEAD ASSIGMENTS
1 - G A TE
1- GATE
2 - D RA IN
2- COLLECTOR
3 - S O U RC E
3- EMITTER
7.10 (.28 0 )
6.70 (.26 3 )
1.1 5 (.0 45)
M IN .
NOTES:
1 D IM E N S IO N IN G & TO LE R A NC ING
P E R A N S I Y 14.5M , 1 98 2
1
2
3
2 C O N TR O LL IN G D IM E N S IO N : IN C H .
3.3 0 (.130 )
3.1 0 (.122 )
-B -
1 3.7 0 (.54 0)
1 3.5 0 (.53 0)
C
A
1 .4 0 (.0 55)
3X
1 .0 5 (.0 42)
3X
0 .90 (.0 35)
0 .70 (.0 28)
0 .2 5 (.0 10)
2.5 4 (.10 0 )
2X
3X
M
A M
B
0.4 8 (.01 9)
0.4 4 (.01 7)
2 .85 (.1 12 )
2 .65 (.1 04 )
D
B
M IN IM U M C R E E P A G E
D IS T A N C E B E TW E E N
A -B -C -D = 4.8 0 (.189 )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/