PD - 94923
IRG4PC30UPbF
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
Industry standard TO-247AC package
Lead-Free
VCES = 600V
VCE(on) typ. = 1.95V
G
@VGE = 15V, IC = 12A
E
n-channel
Benefits
Generation 4 IGBT's offer highest efficiency available
IGBT's optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
23
12
92
92
± 20
10
100
42
-55 to + 150
V
A
V
mJ
W
300 (0.063 in. (1.6mm from case )
10 lbfin (1.1Nm)
°C
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
0.24
6 (0.21)
1.2
40
Units
°C/W
g (oz)
1
12/30/03
IRG4PC30UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
Emitter-to-Collector Breakdown Voltage 18
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.63
1.95
Collector-to-Emitter Saturation Voltage
2.52
VCE(ON)
2.09
VGE(th)
Gate Threshold Voltage
3.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-13
gfe
Forward Transconductance
3.1
8.6
ICES
Zero Gate Voltage Collector Current
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
V(BR)ECS
Max. Units
Conditions
V
VGE = 0V, IC = 250µA
V
VGE = 0V, IC = 1.0A
V/°C VGE = 0V, IC = 1.0mA
2.1
IC = 12A
VGE = 15V
IC = 23A
See Fig.2, 5
V
IC = 12A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
mV/°C VCE = VGE, IC = 250µA
S
VCE = 100 V, IC = 12A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 n A VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
E ts
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
Typ.
50
8.1
18
17
9.6
78
97
0.16
0.20
0.36
20
13
180
140
0.73
13
1100
73
14
Max. Units
Conditions
75
IC = 12A
12
nC
VCC = 400V
See Fig.8
27
VGE = 15V
TJ = 25°C
ns
120
IC = 12A, VCC = 480V
150
VGE = 15V, RG = 23Ω
Energy losses include "tail"
mJ
See Fig. 10, 11, 13, 14
0.50
TJ = 150°C,
IC = 12A, VCC = 480V
ns
VGE = 15V, RG = 23Ω
Energy losses include "tail"
mJ See Fig. 13, 14
nH
Measured 5mm from package
VGE = 0V
pF
VCC = 30V
See Fig. 7
= 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30UPbF
40
Load Current (A)
For both:
Triangular wave:
Duty cycle: 50%
TJ = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 24W
30
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
20
10
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
100
TJ = 25°C
TJ = 150°C
10
1
VGE = 15V
20µs PULSE WIDTH A
0.1
0.1
1
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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10
IC , Collector-to-Emitter Current (A)
IC , Collector-to-Emitter Current (A)
100
TJ = 150°C
10
TJ = 25°C
1
V CC = 10V
5µs PULSE WIDTH A
0.1
5
6
7
8
9
10
11
12
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
25
3.0
V GE = 15V
VCE , Collector-to-Emitter Voltage (V)
Maximum DC Collector Current (A
IRG4PC30UPbF
20
15
10
5
A
0
25
50
75
100
125
V GE = 15V
80µs PULSE WIDTH
IC = 24A
2.5
IC = 12A
2.0
I C = 6.0A
A
1.5
-60
150
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
TC , Case Temperature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
Fig. 5 - Collector-to-Emitter Voltage vs.
Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.01
0.00001
t
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC30UPbF
20
V GE = 0V,
f = 1MHz
C ies = C ge + C gc , Cce SHORTED
C res = C gc
C oes = C ce + C gc
1600
VGE , Gate-to-Emitter Voltage (V)
C, Capacitance (pF)
2000
Cies
1200
800
Coes
400
Cres
16
12
A
0
1
10
VCE = 400V
I C = 12A
8
4
A
0
100
0
10
VCE, Collector-to-Emitter Voltage (V)
10
= 480V
= 15V
= 25°C
= 12A
0.4
0.3
A
0.2
0
10
20
30
40
50
R G , Gate Resistance (Ω)
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
50
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC
VGE
TJ
IC
30
Qg , Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
0.5
20
60
RG = 23 Ω
V GE = 15V
V CC = 480V
IC = 24A
1
I C = 12A
I C = 6.0A
A
0.1
-60
-40
-20
0
20
40
60
80
100 120 140 160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PC30UPbF
RG
TJ
V CC
V GE
1.2
1000
= 23 Ω
= 150°C
= 480V
= 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
1.6
0.8
0.4
A
0.0
0
10
20
I C , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
30
VGE
= 20V
GE
TJ = 125°C
100
SAFE OPERATING AREA
10
1
0.1
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 12 - Turn-Off SOA
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IRG4PC30UPbF
L
D.U.T.
VC *
50V
RL =
0 - 480V
1000V
c
480V
4 X IC@ 25°C
480µF
960V
d
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Current Test Circuit
Load Test Circuit
IC
L
Driver*
D.U.T.
VC
Test Circuit
50V
1000V
c
Fig. 14a - Switching Loss
d
e
* Driver same type
as D.U.T., VC = 480V
c
d
90%
e
VC
10%
90%
Fig. 14b - Switching Loss
t d(off)
10%
I C 5%
Waveforms
tf
tr
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
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7
IRG4PC30UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
-D-
3.65 (.143)
3.55 (.140)
15.90 (.626)
15.30 (.602)
-B-
-A-
0.25 (.010) M D B M
2.50 (.089)
1.50 (.059)
4
5.50 (.217)
20.30 (.800)
19.70 (.775)
2X
1
2
5.30 (.209)
4.70 (.185)
NOTES:
5.50 (.217)
4.50 (.177)
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
2 CONTROLLING DIMENSION : INCH.
3 CONFORMS TO JEDEC OUTLINE
TO-247-AC.
3
-C-
14.80 (.583)
14.20 (.559)
2.40 (.094)
2.00 (.079)
2X
5.45 (.215)
2X
4.30 (.170)
3.70 (.145)
0.80 (.031)
3X 0.40 (.016)
1.40 (.056)
3X 1.00 (.039)
0.25 (.010) M
2.60 (.102)
2.20 (.087)
C A S
3.40 (.133)
3.00 (.118)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -LEAD
GateASSIGNMENTS
1 - Gate
1 - GATE2 - Collector
2 - Drain
2 - DRAIN
3 - Source
3 - Emitter
3 - SOURCE
4 - Drain
4 - DRAIN4 - Collector
TO-247AC Part Marking Information
EXAMPLE: T HIS IS AN IRFPE30
WIT H ASSEMBLY
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE AS SEMBLY LINE "H"
Note: "P" in assembly line
position indicates "Lead-Free"
INT ERNATIONAL
RECT IFIER
LOGO
ASSEMBLY
LOT CODE
PART NUMBER
IRFPE30
56
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/03
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
