IRG4PC50FDPBF

PD 91469B IRG4PC50FD Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20 kHz in resonant mode). • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package VCES = 600V VCE(on) typ. = 1.45V G @VGE = 15V, IC = 39A E n-cha nn el Benefits • Generation -4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 70 39 280 280 25 280 ± 20 200 78 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ------------------------- ----------0.24 ----6 (0.21) 0.64 0.83 -----40 ------ Units °C/W g (oz) 1 12/30/00 IRG4PC50FD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES V FM IGES Parameter Min. Collector-to-Emitter Breakdown VoltageS 600 Temperature Coeff. of Breakdown Voltage ---Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage ---Forward Transconductance T 21 Zero Gate Voltage Collector Current ------Diode Forward Voltage Drop ------Gate-to-Emitter Leakage Current ---- Typ. Max. Units ------V 0.62 ---- V/°C 1.45 1.6 1.79 ---V 1.53 ------- 6.0 -14 ---- mV/°C 30 ---S ---- 250 µA ---- 6500 1.3 1.7 V 1.2 1.5 ---- ±100 nA Conditions VGE = 0V, IC = 250µA VGE = 0V, IC = 1.0mA IC = 39A VGE = 15V IC = 70A See Fig. 2, 5 IC = 39A, TJ = 150°C VCE = VGE, IC = 250µA VCE = VGE, IC = 250µA VCE = 100V, IC = 39A VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 150°C IC = 25A See Fig. 13 IC = 25A, TJ = 150°C VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres t rr Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Q rr Diode Reverse Recovery Charge di(rec)M/dt Diode Peak Rate of Fall of Recovery During tb 2 Min. ---------------------------------------------------------------------------------- Typ. 190 28 65 55 25 240 140 1.5 2.4 3.9 59 27 400 260 6.5 13 4100 250 49 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 290 IC = 39A 42 nC VCC = 400V See Fig. 8 97 VGE = 15V ---TJ = 25°C ---ns IC = 39A, VCC = 480V 360 VGE = 15V, RG = 5.0Ω 210 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 5.0 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 39A, VCC = 480V ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 IF = 25A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C See Fig. ---TJ = 125°C 17 www.irf.com IRG4PC50FD 50 D u ty c yc le: 50 % T J = 1 25°C T sink = 9 0 °C G a te drive as spe cifie d T urn-on loss es includ e e ffects of reverse re c overy Pow er D iss ipation = 40W Load Current ( A ) 40 30 6 0% of rate d vo lta g e 20 10 A 0 0.1 1 10 100 f, Frequenc y (k Hz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 100 T J = 1 5 0 °C 10 T J = 2 5 °C VG E = 1 5 V 2 0 µ s P U L S E W ID T H A 1 0.1 1 10 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com I C , C ollec to r-to -Em itter C urre n t (A) I C , C o lle ctor-to-E m itter Cu rre n t (A ) 1000 100 T J = 1 50 °C TJ = 2 5°C 10 V CC = 5 0 V 5µ s P U L S E W ID TH A 1 5 6 7 8 9 10 11 12 VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50FD 2.5 V G E = 15 V V C E , C ollec to r-to-Em itter V oltage (V) M aximum D C Collector Current (A ) 70 60 50 40 30 20 10 0 V G E = 1 5V 8 0 µs P U L S E W ID TH I C = 78 A 2.0 I C = 39 A 1.5 I C = 20A A 1.0 25 50 75 100 125 150 -60 T C , C ase Tem perature (°C) Fig. 4 - Maximum Collector Current vs. Case Temperature -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n Te m p e ra tu re (°C ) Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Therm al Re spo nse (Z thJC ) 1 D = 0 .5 0 0 .2 0 0 .1 0 .1 0 PD M 0 .0 5 t 0 .0 2 0 .0 1 0 .0 1 0 .0 0 0 0 1 1 t2 S IN G L E P U L S E (T H E R M A L R E S P O N S E ) N o te s : 1 . D u ty fa c to r D = t 1 / t2 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R ectangular P ulse D uration (sec) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50FD VGE = 0V 20 f = 1 MHz Cies = Cge + Cgc + Cce Cres = Cce SHORTED V G E , G a te -to -E m itte r V oltage (V ) 8000 C, Capacitance (pF) Coes = Cce + Cgc 6000 C ies 4000 C oes 2000 Cres A 0 1 10 V CE = 4 0 0 V IC = 39A 16 12 8 4 A 0 100 0 40 V C E , Collector-to-Emitter Voltage (V) Total Switchig Losses (mJ) Total Switchig Losses (mJ) 100 4.50 4.00 A 0 10 20 30 40 50 R G , Gate Resistance ( Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V C C = 480V V G E = 15V T J = 25°C I C = 39A 3.50 120 Q g , To ta l G a te C h a rg e (n C ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 5.00 80 60 R G = 5.0 Ω V G E = 15V V C C = 480V I C = 78A 10 I C = 39A I C = 20A A 1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50FD RG TJ V CC V GE 1000 = 5.0 Ω = 150°C = 480V = 15V I C , C olle ctor-to-E mitte r C urren t (A) Total Switchig Losses (mJ) 16 12 8 4 A 0 0 20 40 60 VGGE E= 2 0V T J = 12 5 °C S A FE O P E R A TIN G A R E A 100 10 1 80 1 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) I C , Collector-to-Emitter Current (A ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 100 TJ = 1 50 °C TJ = 1 25 °C 10 TJ = 25 °C 1 0.6 1.0 1.4 1.8 2.2 2.6 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC50FD 100 140 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V TJ = 125°C TJ = 25°C 120 I IR R M - (A ) t rr - (ns) 100 I F = 50A 80 I F = 25A IF = 50A I F = 25 A 10 I F = 1 0A IF = 10A 60 40 20 100 1 100 1000 di f /dt - (A/µs) Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 d i f /d t - (A /µ s ) Fig. 15 - Typical Recovery Current vs. dif/dt 10000 1500 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C d i(re c )M /d t - (A /µ s ) Q R R - (n C ) 1200 900 I F = 5 0A 600 I F = 2 5A 1000 I F = 10 A I F = 25 A 300 I F = 1 0A 0 100 d i f /d t - (A /µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com I F = 5 0A 1000 100 100 1000 d i f /d t - (A /µ s ) Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC50FD 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 9 0 % Ic 10% Vce Ic 5 % Ic 430µF 80% of Vce D .U .T. td (o ff) tf Eoff = ∫ t1 + 5 µ S V c e ic d t t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Q rr = Ic ∫ trr id d t tx +Vg tx 10% Vcc 1 0 % Irr V cc D UT VO LTAG E AN D CU RRE NT Vce V pk Irr Vcc 1 0 % Ic Ip k 9 0 % Ic Ic D IO D E R E C O V E R Y W A V E FO R M S tr td (o n ) 5% Vce t1 ∫ t2 E o n = V ce ie d t t1 t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ t4 V d id d t t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PC50FD V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 480V 4 X IC @25°C 0 - 480V 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PC50FD Notes: Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10µH, RG = 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. Case Outline — TO-247AC 3 .6 5 ( .1 4 3 ) 3 .5 5 ( .1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -A5 .5 0 (.2 1 7 ) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 -D- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 5 .5 0 (.2 1 7 ) 4 .5 0 (.1 7 7 ) LEAD 1234- 3 -C- * 1 4 .80 ( .58 3) 1 4 .20 ( .55 9) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.21 5) 2X 4.3 0 (.1 70) 3.7 0 (.1 45) 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) N OTES: 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M IL L IM E T E R S (IN C H E S ). 4 C O N F O R M S T O J E D E C O U T L IN E T O -2 4 7A C . * C A S 0 .8 0 (.0 3 1 ) 3X 0 .4 0 (.0 1 6 ) 2 .6 0 (.1 0 2 ) 2 .2 0 (.0 8 7 ) A S S IG N M E N T S GATE C OLLE C TO R E M IT T E R C OLLE C TO R L O N G E R L E A D E D (2 0 m m ) V E R S IO N A V A IL A B L E (T O -2 4 7 A D ) T O O R D E R A D D "-E " S U F F IX TO PART NUMBER CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s io n s in M illim ete rs a n d (In c h e s ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/