IRG4PC50K

PD - 91583B IRG4PC50K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • High short circuit rating optimized for motor control, tsc =10µs, @360V VCE (start), TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Latest generation design provides tighter parameter distribution and higher efficiency than previous generations VCES = 600V VCE(on) typ. = 1.84V G @VGE = 15V, IC = 30A E n-channel Benefits • As a Freewheeling Diode we recommend our HEXFREDTM ultrafast, ultrasoft recovery diodes for minimum EMI / Noise and switching losses in the Diode and IGBT • Latest generation 4 IGBTs offer highest power density motor controls possible • This part replaces the IRGPC50K and IRGPC50M devices TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Max. Units 600 52 30 104 104 10 ±20 170 200 78 -55 to +150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθCS RθJA Wt www.irf.com Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient, typical socket mount Weight Typ. Max. ––– 0.24 ––– 6 (0.21) 0.64 ––– 40 ––– Units °C/W g (oz) 1 4/15/2000 IRG4PC50K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage — 0.47 — 1.84 Collector-to-Emitter Saturation Voltage — 2.19 VCE(ON) — 1.79 VGE(th) Gate Threshold Voltage 3.0 — ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage — -12 gfe Forward Transconductance U 17 24 — — ICES Zero Gate Voltage Collector Current — — — — IGES Gate-to-Emitter Leakage Current — — V(BR)CES V(BR)ECS Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA 2.2 IC = 30A VGE = 15V — IC = 52A See Fig.2, 5 V — IC = 30A , TJ = 150°C 6.0 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 100 V, IC = 30A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 5000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time td(on) tr td(off) tf Ets LE Cies Coes Cres Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. — — — — — — — — — — 10 Typ. 200 25 85 38 34 160 79 0.49 0.68 1.12 — — — — — — — — — — 37 35 260 170 2.34 13 3200 370 95 Max. Units Conditions 300 IC = 30A 38 nC VCC = 400V See Fig.8 130 VGE = 15V — — TJ = 25°C ns 240 IC = 30A, VCC = 480V 120 VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 9,10,14 1.4 — µs VCC = 400V, TJ = 125°C VGE = 15V, RG = 10Ω , VCPK < 500V — TJ = 150°C, — IC = 30A, VCC = 480V ns — VGE = 15V, RG = 5.0Ω — Energy losses include "tail" — mJ See Fig. 11,14 — nH Measured 5mm from package — VGE = 0V — pF VCC = 30V See Fig. 7 — ƒ = 1.0MHz Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0 Ω S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. 2 www.irf.com IRG4PC50K 70 F o r b o th : T ria n g u la r wa v e : D u ty cy cl e: 5 0% TJ = 1 25 °C T sin k = 9 0°C G ate d rive as s p ecified P o w e r D is s ip a tio n = 4 0 W 60 50 40 C la m p v o lta g e : 8 0 % o f ra te d S q u a re wave : 6 0 % o f ra t e d v o lta g e 30 I 20 Id e al d i o de s 10 A 0 0.1 1 10 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 TJ = 25 ° C 100 TJ = 150 °C 10 V GE = 15V 20µs PULSE WIDTH 1 1 10 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com I C , Collector-to-Emitter Current (A) I C, Collector-to-Emitter Current (A) 1000 100 TJ = 150 °C 10 TJ = 25 °C V CC = 50V 5µs PULSE WIDTH 1 5 6 7 8 9 10 11 12 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50K 3.0 VCE , Collector-to-Emitter Voltage(V) 60 Maximum DC Collector Current(A) 50 40 30 20 10 0 25 50 75 100 125 150 VGE = 15V 80 us PULSE WIDTH IC = 60 A 2.0 IC = 30 A IC = 15 A 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 1 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50K VGE = Cies = Cres = Coes = C, Capacitance (pF) 4000 20 0V, f = 1MHz Cge + Cgc , Cce SHORTED Cgc Cce + Cgc VGE , Gate-to-Emitter Voltage (V) 5000 Cies 3000 2000 1000 Coes Cres 0 1 16 12 8 4 0 10 0 100 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Total Switching Losses (mJ) Total Switching Losses (mJ) 100 3.0 2.0 1.0 0.0 10 20 30 40 Ω RG , Gate Resistance (Ohm) (Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 80 120 160 200 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage V CC = 480V V GE = 15V TJ = 25 ° C I C = 30A 0 40 QG , Total Gate Charge (nC) VCE , Collector-to-Emitter Voltage (V) 4.0 VCC = 400V I C = 30A 50 RG = 5.0 Ohm Ω VGE = 15V VCC = 480V 10 IC = 60 A IC = 30 A IC = 15 A 1 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50K RG TJ VCC VGE 1000 5.0Ω = 5.0Ohm = 150 °C = 480V = 15V I C , Collector-to-Emitter Current (A) Total Switching Losses (mJ) 8.0 6.0 4.0 2.0 VGE = 20V T J = 125 oC 100 SAFE OPERATING AREA 10 0.0 10 20 30 40 50 I C , Collector-to-emitter Current (A) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current 6 60 1 10 100 1000 VCE , Collector-to-Emitter Voltage (V) Fig. 12 - Turn-Off SOA www.irf.com IRG4PC50K L D .U .T. VC * 50V RL = 0 - 480V 1 00 0V 480V 4 X IC@25°C 480µF 960V Q R * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R S Q R 9 0% 1 0% S VC 90 % Fig. 14b - Switching Loss t d (o ff) 10 % IC 5% Waveforms tf tr t d (o n ) t=5µ s E on E o ff E ts = ( Eo n +E o ff ) www.irf.com 7 IRG4PC50K Case Outline and Dimensions — TO-247AC 3 .6 5 (.1 4 3 ) 3 .5 5 (.1 4 0 ) 0 .2 5 (.0 1 0 ) M D B M 1 5 .9 0 (.6 2 6 ) 1 5 .3 0 (.6 0 2 ) -B- -A5 .5 0 (.2 1 7) 2 0 .3 0 (.8 0 0 ) 1 9 .7 0 (.7 7 5 ) 2X 1 2 -D- 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9 ) 1 .5 0 (.0 5 9 ) 4 5 .5 0 (.2 17 ) 4 .5 0 (.1 77 ) LEAD 1234- 3 -C- * 1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 (.2 1 5 ) 2X 4 .3 0 (.1 7 0 ) 3 .7 0 (.1 4 5 ) 3X 1 .4 0 (.0 5 6 ) 1 .0 0 (.0 3 9 ) 0 .2 5 (.0 1 0 ) M 3 .4 0 (.1 3 3 ) 3 .0 0 (.1 1 8 ) N O TE S : 1 D IM E N S IO N S & T O L E R A N C IN G P E R A N S I Y 14 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 D IM E N S IO N S A R E S H O W N M ILL IM E T E R S (IN C H E S ). 4 C O N F O R M S T O JE D E C O U T L IN E T O -2 4 7 A C . * A S S IG N M E N T S GATE COLLE CTO R E M IT T E R COLLE CTO R L O N G E R L E A D E D (2 0m m ) V E R S IO N A V A IL A B LE (T O -24 7 A D ) T O O R D E R A D D "-E " S U F F IX T O P A R T N U M B ER 0 .8 0 (.0 3 1 ) 0 .4 0 (.0 1 6 ) 2 .6 0 ( .1 0 2 ) 2 .2 0 ( .0 8 7 ) 3X C A S CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P) D im e n s ion s in M illim e te rs a n d (In c h es ) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 4/00 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/