IRG4PC50UDPBF

PD -95185 IRG4PC50UDPbF UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations • Industry standard TO-247AC package • Lead-Free C VCES = 600V VCE(on) typ. = 1.65V G @VGE = 15V, IC = 27A E n-ch an nel Benefits • Generation 4 IGBT's offer highest efficiencies available • IGBT's optimized for specific application conditions • HEXFRED diodes optimized for performance with IGBT's . Minimized recovery characteristics require less/no snubbing • Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBT's TO-247AC Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw. Max. Units 600 55 27 220 220 25 220 ± 20 200 78 -55 to +150 V A V W °C 300 (0.063 in. (1.6mm) from case) 10 lbf•in (1.1 N•m) Thermal Resistance Parameter RθJC RθJC RθCS RθJA Wt www.irf.com Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight Min. Typ. Max. ------------------------- ----------0.24 ----6 (0.21) 0.64 0.83 -----40 ------ Units °C/W g (oz) 1 04/23/04 IRG4PC50UDPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown VoltageS 600 ---- ---V VGE = 0V, IC = 250µA ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.60 ---- V/°C VGE = 0V, IC = 1.0mA Collector-to-Emitter Saturation Voltage ---- 1.65 2.0 IC = 27A VGE = 15V VCE(on) ---- 2.0 ---V IC = 55A See Fig. 2, 5 ---- 1.6 ---IC = 27A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆T J Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°C VCE = VGE, IC = 250µA Forward Transconductance T 16 24 ---S VCE = 100V, IC = 27A gfe ICES Zero Gate Voltage Collector Current ---- ---- 250 µA VGE = 0V, VCE = 600V ---- ---- 6500 VGE = 0V, VCE = 600V, TJ = 150°C V FM Diode Forward Voltage Drop ---- 1.3 1.7 V IC = 25A See Fig. 13 ---- 1.2 1.5 IC = 25A, TJ = 150°C Gate-to-Emitter Leakage Current ---- ---- ±100 nA VGE = ±20V IGES V(BR)CES Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M /dt 2 Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Min. ---------------------------------------------------------------Diode Peak Reverse Recovery Current ------Diode Reverse Recovery Charge ------Diode Peak Rate of Fall of Recovery ---During tb ---- Typ. 180 25 61 46 25 140 74 0.99 0.59 1.58 44 27 240 130 2.3 13 4000 250 52 50 105 4.5 8.0 112 420 250 160 Max. Units Conditions 270 IC = 27A 38 nC VCC = 400V See Fig. 8 90 VGE = 15V ---TJ = 25°C ---ns IC = 27A, VCC = 480V 230 VGE = 15V, RG = 5.0Ω 110 Energy losses include "tail" and ---diode reverse recovery. ---mJ See Fig. 9, 10, 11, 18 1.9 ---TJ = 150°C, See Fig. 9, 10, 11, 18 ---ns IC = 27A, VCC = 480V ---VGE = 15V, RG = 5.0Ω ---Energy losses include "tail" and ---mJ diode reverse recovery. ---nH Measured 5mm from package ---VGE = 0V ---pF VCC = 30V See Fig. 7 ---ƒ = 1.0MHz 75 ns TJ = 25°C See Fig. 160 TJ = 125°C 14 IF = 25A 10 A TJ = 25°C See Fig. 15 TJ = 125°C 15 VR = 200V 375 nC TJ = 25°C See Fig. 1200 TJ = 125°C 16 di/dt 200A/µs ---- A/µs TJ = 25°C ---TJ = 125°C www.irf.com IRG4PC50UDPbF 40 D u ty c ycl e: 5 0% T J = 1 25 °C T sin k = 90 °C Ga te d rive a s spe cifi ed Tu rn -on lo sses inclu de effe cts o f reve rse re cov ery P o w e r D issipa tion = 4 0 W Loa d C urre nt (A) 30 6 0 % o f rate d v o lta g e 20 10 A 0 0.1 1 10 100 f, Freq uen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 1000 I C , C ollec to r-to-Em itte r C u rre nt (A) I C , C o lle ctor-to-E m itter Cu rre n t (A ) 1000 100 T J = 1 5 0 °C 10 T J = 2 5 °C 1 VGE = 15V 2 0 µ s P U L S E W ID T H 0.1 0 1 A 10 VC E , C o lle c to r-to -E m itte r V o lta g e (V ) Fig. 2 - Typical Output Characteristics www.irf.com 100 TJ = 1 5 0°C T J = 2 5 °C 10 VC C = 1 0 V 5 µ s P U LS E W ID TH A 1 4 6 8 10 12 VG E , G a te -to -E m itte r V o lta g e (V ) Fig. 3 - Typical Transfer Characteristics 3 IRG4PC50UDPbF 2.5 V G E = 15 V V C E , C ollec to r-to-Em itter V oltage (V) M axim um DC C ollector C urrent (A) 60 50 40 30 20 10 0 25 50 75 100 125 IC = 5 4 A 2.0 IC = 2 7 A 1.5 IC = 14 A A 1.0 150 -60 T C , C ase Tem perature (°C) Fig. 4 - Maximum Collector Current vs. Temperature V G E = 1 5V 8 0 µs P U L S E W ID TH -40 -20 0 20 40 60 80 100 120 140 160 T J , Ju n c tio n Te m p e ra tu re (°C ) Case Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature T h e rm a l R e s p o n s e (Z thJC ) 1 D = 0 .5 0 0 .2 0 0 .1 0 .1 0 PD M 0 .0 5 t S IN G L E P U L S E (T H E R M A L R E S P O N S E ) 0 .0 2 t2 N ote s : 1 . D u ty f ac t or D = t 0 .0 1 0 .0 1 0 .0 0 0 0 1 1 1 / t2 2 . P e a k TJ = P D M x Z th J C + T C 0 .0 0 0 1 0 .0 0 1 0 .0 1 0 .1 1 10 t 1 , R e c ta n g u la r P u ls e D ura tio n (s e c ) Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4PC50UDPbF 20 V GE C ie s C re s C oes 6000 = = = = 0V , f = 1M Hz C ge + C gc , C ce SH O R TED C gc C ce + C gc V G E , Gate-to-Emitter Voltage (V) C, Capacitance (pF) 8000 C ie s 4000 C oes 2000 C res A 0 1 10 VC E = 400V I C = 27A 16 12 8 4 A 0 0 100 40 Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 2.5 2.0 1.5 A 1.0 10 20 30 40 R G , G a te R e s is ta n c e ( 50 Ω) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 200 10 = 480V = 15V = 2 5 °C = 27A 0 160 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Total Switching Losses (mJ) T ota l S w itching Loss es (m J) VCC VGE TJ IC 120 Q g , Total Gate Charge (nC) V C E , C o lle c to r-to -E m itte r V o lta g e (V ) 3.0 80 60 I C = 54A I C = 27A 1 I C = 14A 0.1 RG = 5.0 Ω VG E = 15V VC C = 480V -60 -40 -20 0 A 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4PC50UDPbF RG TJ V CC V GE 1000 = 5 .0 Ω = 1 5 0 °C = 480V = 15V I C , Collector-to-E m itter C urrent (A) Total S w itc hing Loss es (m J) 8.0 6.0 4.0 2.0 A 0.0 0 10 20 30 40 50 VGGE E= 2 0V T J = 125 °C S A FE O P E R A TIN G A R E A 100 10 1 60 1 I C , C o lle c to r-to-E m itte r C u rre n t (A ) 10 100 1000 V C E , Collecto r-to-E m itter V oltage (V ) Fig. 12 - Turn-Off SOA Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current In s ta n ta n e o u s F o rw a rd C u rre n t - I F (A ) 100 TJ = 1 50 °C TJ = 1 25 °C 10 TJ = 25 °C 1 0.6 1.0 1.4 1.8 2.2 2.6 F o rw a rd V o lta g e D ro p - V F M (V ) Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com IRG4PC50UDPbF 100 140 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V TJ = 125°C TJ = 25°C 120 I IR R M - (A ) t rr - (ns) 100 I F = 50A 80 I F = 25A I F = 5 0A I F = 2 5A 10 I F = 10 A IF = 10A 60 40 20 100 di f /dt - (A/µs) 1 100 1000 Fig. 14 - Typical Reverse Recovery vs. dif/dt 1000 d i f /d t - (A /µ s) Fig. 15 - Typical Recovery Current vs. dif/dt 1500 10000 VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C VR = 2 0 0 V T J = 1 2 5 °C T J = 2 5 °C d i(rec)M /d t - (A /µs) Q R R - (n C ) 1200 900 I F = 5 0A 600 I F = 2 5A 1000 I F = 10 A I F = 25 A 300 I F = 1 0A 0 100 d i f /d t - (A /µ s ) Fig. 16 - Typical Stored Charge vs. dif/dt www.irf.com I F = 5 0A 1000 100 100 di f /dt - (A /µs) 1000 Fig. 17 - Typical di(rec)M/dt vs. dif/dt 7 IRG4PC50UDPbF 90% Vge +Vge Same ty pe device as D .U.T. Vce Ic 9 0 % Ic 10% Vce Ic 430µF 80% of Vce 5 % Ic D .U .T. td (o ff) tf Eoff = Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf t1 ∫ t1 + 5 µ S V c e ic d t t1 t2 Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining Eoff, td(off), tf G A T E V O L T A G E D .U .T . 1 0 % +V g trr Ic Q rr = D UT VO LTAG E AN D CU RRE NT Vce 1 0 % Ic Ip k 9 0 % Ic tr td (o n ) V pk 1 0 % Irr V cc Irr Ic D IO D E R E C O V E R Y W A V E FO R M S 5% Vce t1 t2 E o n = V ce ie d t t1 ∫ t2 E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 Fig. 18c - Test Waveforms for Circuit of Fig. 18a, Defining Eon, td(on), tr 8 ∫ +Vg tx 10% Vcc Vcc trr id d t tx ∫ t4 V d id d t t3 t4 Fig. 18d - Test Waveforms for Circuit of Fig. 18a, Defining Erec, trr, Qrr, Irr www.irf.com IRG4PC50UDPbF V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T . V O L T A G E IN D .U .T . C U R R E N T IN D 1 t0 t1 t2 Figure 18e. Macro Waveforms for Figure 18a's Test Circuit L 1000V D.U.T. Vc* RL= 0 - 480V 480V 4 X IC @25°C 50V 6000µ F 100 V Figure 19. Clamped Inductive Load Test Circuit www.irf.com Figure 20. Pulsed Collector Current Test Circuit 9 IRG4PC50UDPbF Notes: Q Repetitive rating: VGE = 20V; pulse width limited by maximum junction temperature (figure 20) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω (figure 19) S Pulse width ≤ 80µs; duty factor ≤ 0.1%. T Pulse width 5.0µs, single shot. TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2000 IN T HE AS S EMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO AS S EMBLY LOT CODE PART NUMBER IRFPE30 56 035H 57 DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/