IRG4RC10K

PD 91735A IRG4RC10K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10µs @ 125°C, VGE = 15V • Generation 4 IGBT design provides higher efficiency than Generation 3 • Industry standard TO-252AA package VCES = 600V VCE(on) typ. = 2.39V G @VGE = 15V, IC = 5.0A E n-channel Benefits • Generation 4 IGBT's offer highest efficiency available • IGBT's optimized for specified application conditions D-PAK TO-252AA Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM tsc VGE EARV PD @ T C = 25°C PD @ T C = 100°C TJ TSTG Parameter Max. Units Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load CurrentR Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 600 9.0 5.0 18 18 10 ± 20 34 38 15 -55 to + 150 V A µs V mJ W °C 300 (0.063 in. (1.6mm) from case ) Thermal Resistance Parameter RθJC RθJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. Max. ––– ––– 0.3 (0.01) 3.3 50 ––– Units °C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/30/00 IRG4RC10K Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)ECS ∆V(BR)CES/∆TJ VCE(ON) VGE(th) ∆VGE(th)/∆TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 — Emitter-to-Collector Breakdown Voltage T 18 — Temperature Coeff. of Breakdown Voltage — 0.58 — 2.39 Collector-to-Emitter Saturation Voltage — 3.25 — 2.63 Gate Threshold Voltage 3.0 — Temperature Coeff. of Threshold Voltage — -11 Forward Transconductance U 1.2 1.8 — — Zero Gate Voltage Collector Current — — — — Gate-to-Emitter Leakage Current — — Max. Units Conditions — V VGE = 0V, IC = 250µA — V VGE = 0V, IC = 1.0A — V/°C VGE = 0V, IC = 1.0mA VGE = 15V 2.62 IC = 5.0A — IC = 9.0A See Fig.2, 5 V — IC = 5.0A , TJ = 150°C 6.5 VCE = VGE, IC = 250µA — mV/°C VCE = VGE, IC = 250µA — S VCE = 50 V, IC = 5.0A 250 VGE = 0V, VCE = 600V µA 2.0 VGE = 0V, VCE = 10V, TJ = 25°C 1000 VGE = 0V, VCE = 600V, TJ = 150°C ±100 nA VGE = ±20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Min. — — — — — — — — — — 10 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 100Ω, (See fig. 13a) 2 — — — — — — — — — Typ. Max. Units Conditions 19 29 IC = 5.0A 2.9 4.3 nC VCC = 400V See Fig.8 9.8 15 VGE = 15V 11 — 24 — TJ = 25°C ns 51 77 IC = 5.0A, VCC = 480V 190 290 VGE = 15V, R G = 100Ω 0.16 — Energy losses include "tail" 0.10 — mJ See Fig. 9,10,14 0.26 0.32 — — µs VCC = 400V, TJ = 125°C VGE = 15V, R G = 100Ω , VCPK < 500V 11 — TJ = 150°C, 27 — IC = 5.0A, VCC = 480V ns 67 — VGE = 15V, R G = 100Ω 350 — Energy losses include "tail" 0.47 — mJ See Fig. 10,11,14 7.5 — nH Measured 5mm from package 220 — VGE = 0V 29 — pF VCC = 30V See Fig. 7 7.5 — ƒ = 1.0MHz S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. www.irf.com IRG4RC10K 4 For both: 3 Loa d C urre nt (A ) Triangular wave: Duty cycle: 50% TJ = 125°C Tsink = 55°C Gate drive as specified Power Dissipation = 1.4W Clamp voltage: 80% of rated Square wave: 2 60% of rated voltage 1 Ideal diodes A 0 0.1 1 10 100 f, F re q u e n c y (k H z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 TJ = 25 °C  10 TJ = 150 °C  V = 15V  20µs PULSE WIDTH I C , Collector-to-Emitter Current (A) I C , Collector Current (A) 100 10 TJ = 150 °C  TJ = 25 °C  GE 1 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VCE , Collector-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics www.irf.com 1 5 10 V = 50V  5µs PULSE WIDTH CC 15 20 VGE , Gate-to-Emitter Voltage (V) Fig. 3 - Typical Transfer Characteristics 5µs PULSE WIDTH 3 IRG4RC10K 5.0 V = 15V  80 us PULSE WIDTH GE VCE , Collector-to-Emitter Voltage(V) Maximum DC Collector Current(A) 10 8 6 4 2 0 25 50 75 100 125 150  I C = 10 A 4.0 3.0  IC = 5 A  I C = 2.5 A 2.0 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( ° C) TC , Case Temperature ( °C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10  0.05 0.1 0.01 0.00001 0.02 0.01 P DM SINGLE PULSE  (THERMAL RESPONSE) t1 t2  Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10K VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc C, Capacitance (pF) 300 Cies  200 100 C oes 20 VGE , Gate-to-Emitter Voltage (V)  400  VCC = 400V I C = 5.0A 16 12 8 4 Cres  0 1 10 0 100 0 VCE , Collector-to-Emitter Voltage (V)  10 VCC = 480V VGE = 15V TJ = 25 °C I C = 5A Total Switching Losses (mJ) Total Switching Losses (mJ) 0.26 0.24 0.22 0.20 0 20 40 60 80 RG , Gate Resistance ( Ω ) Fig. 9 - Typical Switching Losses vs. Gate Resistance www.irf.com 8 12 16 20 Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage 0.28 4 QG , Total Gate Charge (nC) 100  100Ω RG = Ohm VGE = 15V VCC = 480V  IC = 10 A 1  IC = 5 A  IC = 2.5 A 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature ( °C ) Fig. 10 - Typical Switching Losses vs. Junction Temperature 5 IRG4RC10K  RG TJ VCC 1.0 VGE  100 = 100 OhmΩ = 150 ° C = 480V = 15V I C , Collector Current (A) Total Switching Losses (mJ) 1.2 0.8 0.6 VGE = 20V T J = 125 oC 10 0.4 SAFE OPERATING AREA 1 0.2 2 4 6 8 1 10 10 Fig. 11 - Typical Switching Losses vs. Collector Current L 1000 Fig. 12 - Turn-Off SOA D .U .T. VC * 50V 100 VCE , Collector-to-Emitter Voltage (V) I C , Collector Current (A) RL = 0 - 480V 10 0 0V 480V 4 X I C@25°C 480µF 960V Q R * Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax ) * Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre as e to obta in rated Id. Fig. 13a - Clamped Inductive Fig. 13b - Pulsed Collector Load Test Circuit Current Test Circuit IC L D river* D .U .T. VC Fig. 14a - Switching Loss Test Circuit 50V 1000V Q * Driver same type as D.U.T., VC = 480V R 6 S www.irf.com IRG4RC10K Q R 90 % 10 % S VC 90 % Fig. 14b - Switching Loss t d (o ff) 1 0% IC 5% Waveforms tf tr t d (o n ) t=5µ s Eon E o ff E ts = (E o n +E o ff ) Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.09 4) 2 .1 9 (.08 6) 6.73 (.2 65) 6.35 (.2 50) -A1.2 7 (.050 ) 0.8 8 (.035 ) 5.46 (.2 15 ) 5.21 (.2 05 ) 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 4 6.45 (.2 45 ) 5.68 (.2 24 ) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 1 0.42 (.4 10 ) 9 .4 0 (.37 0) 0.51 (.0 20 ) M IN. -B1.5 2 (.0 60 ) 1.1 5 (.0 45 ) 3X 1 .1 4 (.04 5) 2 X 0 .7 6 (.03 0) 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (.01 0) 2 .28 (.09 0) 4.5 7 (.1 80 ) www.irf.com LEAD ASSIGNMENTS 3 M A M B LE AD A1SS IG N M E NTS - GATE 1 - G ATE 2 - COLLECTOR 2 - D RA IN 3 - EMITTER 3 - SO U R C E COLLECTOR 44 - D- RA IN 0 .58 (.0 23) 0 .46 (.0 18) N O TE S: 1 D IM EN S IO N IN G & TO LE R AN C IN G PE R A N SI Y 14 .5M , 1 982 . 2 C O N TR O LLING D IM EN S IO N : INC H . 3 C O N FO R M S TO JED E C O U TLIN E TO -25 2A A. 4 D IM EN S IO N S S H O W N AR E B EF O RE SO L D ER D IP, SO L D ER D IP M AX. +0 .16 (.00 6). 7 IRG4RC10K Tape & Reel Information TO-252AA TR TRR 1 6.3 ( .641 ) 1 5.7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N TRL 16 .3 ( .641 ) 15 .7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 8 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/