IRG5K100HF12A

IRG5K50P5K50PM06E IRG5K100HF12A IGBT Half-Bridge POWIR 34™ Package VCES = 1200V IC = 100A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 2.30V at IC = 100A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K100HF12A POWIR 34™ Box 80 IRG5K100HF12A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 100 A TC = 25°C 200 A ICM Pulse Collector Current TJ = 150°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 620 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K100HF12A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 1mA 5.3 6.0 V IC = 1mA, VCE = VGE 2.30 2.60 V TJ = 25°C V TJ = 125°C 2.60 IC = 100A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0V Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 190 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1270 Cies Input Capacitance 12.9 Coes Output Capacitance 0.90 Cres Reverse Transfer Capacitance 0.36 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 185 110 125 500 600 150 200 8.4 10.1 6.7 8.6 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 100A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 200A,VCC = 960V, VP = 1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K100HF12A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 200 Diode Continuous Forward Current, TC = 80°C 100 Pulse Diode Current 200 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 55 Unit V A 75 6.7 µC 11.7 2.3 mJ 4.6 Test Conditions TJ = 25°C TJ = 125°C IF = 100A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝100A, di/dt= 890A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.20 °C/W RθJC Junction-to-Case (Diode) 0.41 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG5K100HF12A 200 200 VGE =15V TJ =125°C 180 160 180 TJ =25°C 140 IC (A) IC (A) 100 80 60 40 40 20 20 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 0 0.0 4.2 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 4.2 4.8 Fig.2 Typical IGBT Output Characteristics 200 20 VGE =0V TJ =125°C 180 160 VGE =0V,f =1MHz Cies 18 16 TJ =25°C 140 Coes 14 12 C (nF) 120 IF (A) VGE =9V 80 60 0 0.0 100 10 80 8 60 6 40 4 20 2 0 0.0 0.6 1.2 1.8 2.4 VF (V) 3.0 3.6 0 4.2 Fig.3 Typical Diode Forward Characteristics 0 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 25 25 VCC =600V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 20 VCC =600V,VGE =+/-15V, IC =100A,TJ =125°C 20 Eoff Eon 15 Eoff Eon 15 Erec E (mJ) E (mJ) VGE =13V VGE =11V 120 100 10 5 Erec 10 5 0 20 40 60 80 100 120 IC (A) 140 160 180 200 Fig.5 Typical Switching Loss vs. Collector Current 4 VGE =17V VGE =15V 140 120 0 TJ =125°C 160 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 Rg () 25 30 35 40 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K100HF12A 140 Duty Cycle:50% TJ =125°C 120 TC =80°C 100 Rg=15 ohm,VGE =15V 80 150 Square Wave: IC (A) Load Current (A) 200 Vcc 100 60 I 40 50 20 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.3 0.5 ZthJC:Diode ZthJC:IGBT 0.4 ZthJC (K/W) ZthJC (K/W) 0.2 0.1 0.3 0.2 0.1 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K100HF12A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014