0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IRG5K150HF12B

IRG5K150HF12B

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®62

  • 描述:

    MOD IGBT 1200V 150A POWIR 62

  • 数据手册
  • 价格&库存
IRG5K150HF12B 数据手册
IRG5K50P5K50PM06E IRG5K150HF12B IGBT Half-Bridge POWIR 62™ Package VCES = 1200V IC = 150A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 2.30V at IC = 150A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K150HF12B POWIR 62™ Box 45 IRG5K150HF12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 150 A TC = 25°C 300 A ICM Pulse Collector Current TJ = 150°C 300 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 1060 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K150HF12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 2mA 5.3 6.0 V IC = 1.5mA, VCE = VGE 2.30 2.60 V TJ = 25°C V TJ = 125°C 2.60 IC = 150A, VGE = 15V 2 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 200 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1940 Cies Input Capacitance 19.0 Coes Output Capacitance 1.40 Cres Reverse Transfer Capacitance 0.56 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 190 120 120 530 560 160 200 9.6 12.8 9.5 12.4 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 150A, RG = 6.2Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 300A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K150HF12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 300 Diode Continuous Forward Current, TC = 80°C 150 Pulse Diode Current 300 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 90 120 8.2 13.5 3.7 6.0 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 150A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=150A, di/dt=1680A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.118 °C/W RθJC Junction-to-Case (Diode) 0.280 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG5K150HF12B 300 300 VGE =15V TJ =125°C 270 240 270 TJ =25°C 210 VGE =17V VGE =15V 210 VGE =13V VGE =11V 180 IC (A) 180 IC (A) TJ =125°C 240 150 150 120 VGE =9V 120 90 90 60 60 30 30 0 0.0 0.5 1.0 1.5 2.0 VCE (V) 2.5 3.0 3.5 0 0.0 4.0 0.5 1.0 1.5 2.0 2.5 VCE (V) 3.0 3.5 4.0 Fig.1 Typical IGBT Saturation Characteristics Fig.2 Typical IGBT Output Characteristics 300 30 270 VGE =0V TJ =125°C 240 VGE =0V,f =1MHz Cies 25 Coes TJ =25°C 210 4.5 20 IF (A) C (nF) 180 150 15 120 10 90 60 5 30 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics Fig.3 Typical Freewheeling Diode Characteristics 25 40 VCC =600V,VGE =+/-15V, Rg =6.2 ohm,TJ =125°C 20 VCC =600V,VGE =+/-15V, IC =150A,TJ =125°C 35 Eoff Eon 15 Eoff Eon 30 25 Erec E (mJ) E (mJ) 0 10 Erec 20 15 10 5 5 0 0 30 60 90 120 150 180 IC (A) 210 240 270 300 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 Rg () 20 25 30 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K150HF12B 240 210 Duty Cycle:50% TJ =125°C 300 180 TC =80°C 250 Rg =6.2 ohm,VGE =15V Load Current (A) 150 200 IC (A) Square Wave: 120 Vcc 90 I 100 60 0 1 Module Chip 50 Diode as specified 30 150 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.15 0.4 ZthJC:Diode ZthJC:IGBT 0.3 ZthJC (K/W) ZthJC (K/W) 0.10 0.05 0.2 0.1 0.00 0.001 0.01 0.1 1 2 t (s) 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K150HF12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014
IRG5K150HF12B 价格&库存

很抱歉,暂时无法提供与“IRG5K150HF12B”相匹配的价格&库存,您可以联系我们找货

免费人工找货