IRG5K200HF06A

IRG5K50P5K50PM06E IRG5K200HF06A IGBT Half-Bridge POWIR 34™ Package VCES = 600V IC = 200A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 200A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K200HF06A POWIR 34™ Box 80 IRG5K200HF06A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 200 A TC = 25°C 340 A ICM Pulse Collector Current TJ = 150°C 400 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 800 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K200HF06A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. Unit Test Conditions V VGE = 0V, IC = 1mA 4.5 5.5 V IC = 4mA, VCE = VGE 1.80 2.10 V TJ = 25°C V TJ = 125°C 2.00 IC = 200A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0V Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 223 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1100 Cies Input Capacitance 11.9 Coes Output Capacitance 1.15 Cres Reverse Transfer Capacitance 0.46 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 210 190 195 492 510 145 140 1.5 2.3 8.0 8.6 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 200A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 400A,VCC = 480V, VP = 600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K200HF06A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 400 Diode Continuous Forward Current, TC = 80°C 200 Pulse Diode Current 400 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.50 1.80 1.50 40 Unit V A 55 4.9 µC 9.4 0.34 mJ 1.38 Test Conditions TJ = 25°C TJ = 125°C IF = 200A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝200A, di/dt= 580A/μs, Vrr = 300V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.155 °C/W RθJC Junction-to-Case (Diode) 0.52 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 g Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K200HF06A 400 400 350 VGE =15V TJ =125°C 350 300 TJ =25°C 300 VGE =17V VGE =15V VGE =13V VGE =11V 250 IC (A) IC (A) 250 TJ =125°C 200 150 200 150 100 100 50 50 0 0.0 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 2.8 3.2 VGE =9V 0 0.0 3.6 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 4.2 4.8 Fig.2 Typical IGBT Output Characteristics 400 25 VGE =0V TJ =125°C 360 320 20 TJ =25°C 280 VGE =0V,f =1MHz Cies 15 IF (A) C (nF) 240 Coes 200 160 10 120 80 5 40 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 0 2.4 Fig.3 Typical Diode Forward Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 25 16 VCC =300V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 20 Eoff Eon Eoff Eon 12 10 Erec 15 VCC =300V,VGE =+/-15V, IC =200A,TJ =125°C 14 E (mJ) E (mJ) 0 10 Erec 8 6 4 5 2 0 0 40 80 120 160 200 240 IC (A) 280 320 360 400 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 4 8 Rg () 12 16 20 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K200HF06A 280 Duty Cycle:50% TJ =125°C 240 400 TC =80°C Rg =15 ohm,VGE =15V 160 300 Square Wave: IC (A) Load Current (A) 200 Vcc 120 I 80 100 40 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 100 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.18 0.6 ZthJC:Diode ZthJC:IGBT 0.15 0.5 0.12 0.4 ZthJC (K/W) ZthJC (K/W) 200 0.09 0.3 0.06 0.2 0.03 0.1 0.00 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K200HF06A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014