IRG5K50P5K50PM06E
IRG5K200HF12B
IGBT Half-Bridge
POWIR 62mm Package
VCES = 1200V
IC = 200A at TC = 80°C
tSC ≥ 10µsec
VCE(ON) = 2.30V at IC = 200A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 62mm Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5K200HF12B
POWIR 62mm
Box
45
IRG5K200HF12B
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
200
A
TC = 25°C
400
A
ICM
Pulse Collector Current
TJ = 150°C
400
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
1250
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5K200HF12B
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
1200
4.5
Unit
Test Conditions
V
VGE = 0V, IC = 2mA
5.3
6.0
V
IC = 1 mA, VCE = VGE
2.30
2.60
V
TJ = 25°C
V
TJ = 125°C
2.60
IC = 200A,
VGE = 15V
2
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
1.25
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
280
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
2370
Cies
Input Capacitance
26.0
Coes
Output Capacitance
1.80
Cres
Reverse Transfer Capacitance
0.72
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
Max.
Unit
ns
260
185
ns
185
850
ns
900
115
ns
125
20.0
28.4
16.9
21.1
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 200A,
RG = 10Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 400A,VCC = 960V,
VP =1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5K200HF12B
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
400
Diode Continuous Forward Current, TC = 80°C
200
Pulse Diode Current
400
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.00
2.70
2.20
90
Unit
V
A
130
9.7
µC
22.5
3.8
mJ
8.7
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 200A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=200A,
di/dt=1290A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.100
°C/W
RθJC
Junction-to-Case (Diode)
0.204
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M6
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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IRG5K50P5K50PM06E
IRG5K200HF12B
400
400
VGE =15V
TJ =125°C
360
320
360
TJ =25°C
280
VGE =17V
VGE =15V
280
VGE =13V
VGE =11V
240
IC (A)
240
IC (A)
TJ =125°C
320
200
200
160
VGE =9V
160
120
120
80
80
40
40
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
0
0.0
4.2
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
400
40
360
VGE =0V
TJ =125°C
320
30
C (nF)
IF (A)
Coes
25
240
200
160
20
15
120
10
80
5
40
0
0.0
0.4
0.8
1.2
1.6
VF (V)
2.0
2.4
2.8
0
3.2
0
5
20
25
70
VCC =600V,VGE =+/-15V,
Rg =10 ohm,TJ =125°C
60
VCC =600V,VGE =+/-15V,
IC =200A,TJ =125°C
60
Eoff
Eon
50
Eoff
Eon
40
Erec
40
Erec
E (mJ)
50
30
30
20
20
10
10
0
40
80
120
160
200 240
IC (A)
280
320
360
400
Fig.5 Typical Switching Loss vs. Collector Current
4
15
Fig. 4 Typical Capacitance Characteristics
70
0
10
VCE (V)
Fig.3 Typical Freewheeling Diode Characteristics
E (mJ)
VGE =0V,f =1MHz
Cies
35
TJ =25°C
280
4.8
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0
0
5
10
15
Rg ()
20
25
30
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5K200HF12B
280
Duty Cycle:50%
TJ =125°C
240
TC =80°C
200
Load Current (A)
400
Rg =15 ohm,VGE =15V
300
IC (A)
160
Square Wave:
Vcc
120
200
I
80
100
40
0
Module
Chip
Diode as specified
1
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
200
400
600
800
VCES (V)
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.25
0.12
ZthJC:Diode
ZthJC:IGBT
0.20
ZthJC (K/W)
ZthJC (K/W)
0.09
0.06
0.03
0.00
0.001
0.15
0.10
0.05
0.01
t (s)
0.1
1
2
0.00
0.001
0.01
t (s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5K200HF12B
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial (link to qualification report)
Moisture Sensitivity Level
Not Applicable
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC and MIL standards at the time of product release.
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
6
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May 12, 2014