IRG5K50P5K50PM06E
IRG5K300HF06B
IGBT Half-Bridge
POWIR 62™ Package
VCES = 600V
IC = 300A at TC = 80°C
tSC ≥ 10µsec
VCE(ON) = 1.80V at IC = 300A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 62™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5K300HF06B
POWIR 62™
Box
45
IRG5K300HF06B
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
600
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
300
A
TC = 25°C
480
A
ICM
Pulse Collector Current
TJ = 150°C
600
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
1200
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5K300HF06B
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
600
VGE(th)
Gate Threshold Voltage
3.5
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
Unit
Test Conditions
V
VGE = 0V, IC = 2mA
4.5
5.5
V
IC = 0.75mA, VCE = VGE
1.80
2.10
V
TJ = 25°C
V
TJ = 125°C
2.00
IC = 300A,
VGE = 15V
2
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
1.57
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
270
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
1600
Cies
Input Capacitance
18.8
Coes
Output Capacitance
1.98
Cres
Reverse Transfer Capacitance
0.79
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
260
240
230
600
620
170
160
2.0
5.6
10.3
12.0
Max.
Unit
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=300V,
IC = 300A,
RG = 10Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 600A,VCC = 480V,
VP =600V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 300V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5K300HF06B
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
600
Diode Continuous Forward Current, TC = 25°C
600
Diode Continuous Forward Current, TC = 80°C
300
Pulse Diode Current
600
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
1.40
1.70
1.40
65
100
4.8
10.2
0.26
1.30
Unit
V
A
µC
mJ
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 300A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=300A,
di/dt=960A/μs,
Vrr = 300V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.104
°C/W
RθJC
Junction-to-Case (Diode)
0.348
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M6
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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IRG5K50P5K50PM06E
IRG5K300HF06B
600
600
VGE =15V
TJ =125°C
540
480
540
TJ =25°C
420
VGE =17V
VGE =15V
420
VGE =13V
VGE =11V
360
IC (A)
360
IC (A)
TJ =125°C
480
300
240
300
180
180
120
120
60
60
0
0.0
0.4
0.8
1.2
1.6
VCE (V)
2.0
2.4
2.8
VGE =9V
240
0
0.0
3.2
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
600
35
540
VGE =0V
TJ =125°C
480
C (nF)
IF (A)
300
240
180
15
5
60
0
0.0
0.2
0.4
0.6
0.8
1.0 1.2
VF (V)
1.4
1.6
1.8
0
2.0
0
5
10
VCE (V)
15
20
25
Fig. 4 Typical Capacitance Characteristics
Fig.3 Typical Freewheeling Diode Characteristics
30
24
VCC =300V,VGE =+/-15V,
Rg =10 ohm,TJ =125°C
25
E (mJ)
Erec
Erec
12
10
8
5
4
60
120
Eoff
Eon
16
15
0
VCC =300V,VGE =+/-15V,
IC =300A,TJ =125°C
20
Eoff
Eon
20
E (mJ)
20
10
120
180
240
300 360
IC (A)
420
480
540
600
Fig.5 Typical Switching Loss vs. Collector Current
4
Coes
25
360
0
VGE =0V,f =1 MHz
Cies
30
TJ =25°C
420
4.8
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0
0
5
10
15
Rg ()
20
25
30
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5K300HF06B
350
Duty Cycle:50%
TJ =125°C
600
300
TC =80°C
500
Rg=10 ohm,VGE =15V
250
400
IC (A)
Load Current (A)
400
Square Wave:
200
Vcc
300
150
I
200
100
50
0
1
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
100
200
300
400
VCES (V)
500
600
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.4
0.12
0.10
Module
Chip
100
Diode as specified
ZthJC:Diode
ZthJC:IGBT
0.3
ZthJC (K/W)
ZthJC (K/W)
0.08
0.06
0.2
0.04
0.1
0.02
0.00
0.001
0.01
t ( s)
0.1
1
2
0.00
0.001
0.01
t ( s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5K300HF06B
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
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