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IRG5K300HF06B

IRG5K300HF06B

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®62

  • 描述:

    MOD IGBT 600V 300A POWIR 62

  • 数据手册
  • 价格&库存
IRG5K300HF06B 数据手册
IRG5K50P5K50PM06E IRG5K300HF06B IGBT Half-Bridge POWIR 62™ Package VCES = 600V IC = 300A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 300A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K300HF06B POWIR 62™ Box 45 IRG5K300HF06B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 300 A TC = 25°C 480 A ICM Pulse Collector Current TJ = 150°C 600 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 1200 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K300HF06B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. Unit Test Conditions V VGE = 0V, IC = 2mA 4.5 5.5 V IC = 0.75mA, VCE = VGE 1.80 2.10 V TJ = 25°C V TJ = 125°C 2.00 IC = 300A, VGE = 15V 2 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 1.57 Ω Switching Characteristics of IGBT Parameter Min. Typ. 270 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1600 Cies Input Capacitance 18.8 Coes Output Capacitance 1.98 Cres Reverse Transfer Capacitance 0.79 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 260 240 230 600 620 170 160 2.0 5.6 10.3 12.0 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 300A, RG = 10Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 600A,VCC = 480V, VP =600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K300HF06B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 600 Diode Continuous Forward Current, TC = 80°C 300 Pulse Diode Current 600 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.40 1.70 1.40 65 100 4.8 10.2 0.26 1.30 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 300A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=300A, di/dt=960A/μs, Vrr = 300V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.104 °C/W RθJC Junction-to-Case (Diode) 0.348 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG5K300HF06B 600 600 VGE =15V TJ =125°C 540 480 540 TJ =25°C 420 VGE =17V VGE =15V 420 VGE =13V VGE =11V 360 IC (A) 360 IC (A) TJ =125°C 480 300 240 300 180 180 120 120 60 60 0 0.0 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 VGE =9V 240 0 0.0 3.2 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 4.2 Fig.1 Typical IGBT Saturation Characteristics Fig.2 Typical IGBT Output Characteristics 600 35 540 VGE =0V TJ =125°C 480 C (nF) IF (A) 300 240 180 15 5 60 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (V) 1.4 1.6 1.8 0 2.0 0 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics Fig.3 Typical Freewheeling Diode Characteristics 30 24 VCC =300V,VGE =+/-15V, Rg =10 ohm,TJ =125°C 25 E (mJ) Erec Erec 12 10 8 5 4 60 120 Eoff Eon 16 15 0 VCC =300V,VGE =+/-15V, IC =300A,TJ =125°C 20 Eoff Eon 20 E (mJ) 20 10 120 180 240 300 360 IC (A) 420 480 540 600 Fig.5 Typical Switching Loss vs. Collector Current 4 Coes 25 360 0 VGE =0V,f =1 MHz Cies 30 TJ =25°C 420 4.8 www.irf.com © 2014 International Rectifier 0 0 5 10 15 Rg () 20 25 30 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K300HF06B 350 Duty Cycle:50% TJ =125°C 600 300 TC =80°C 500 Rg=10 ohm,VGE =15V 250 400 IC (A) Load Current (A) 400 Square Wave: 200 Vcc 300 150 I 200 100 50 0 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 100 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.4 0.12 0.10 Module Chip 100 Diode as specified ZthJC:Diode ZthJC:IGBT 0.3 ZthJC (K/W) ZthJC (K/W) 0.08 0.06 0.2 0.04 0.1 0.02 0.00 0.001 0.01 t ( s) 0.1 1 2 0.00 0.001 0.01 t ( s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K300HF06B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014
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