IRG5K30FF06Z

IRG5K50P5K50PM06E IRG5K30FF06Z IGBT Six-Pack EZIRPACK 1™ Package VCES = 600V IC = 30A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 30A Applications：  Industrial Motor Drive Servo drive Uninterruptible Power Supply AC Inverter Drive    Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance EZIRPACK 1™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K30FF06Z EZIRPACK 1™ Box 80 IRG5K30FF06Z Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 30 A TC = 25°C 60 A ICM Pulse Collector Current TJ = 150°C 60 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 200 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K30FF06Z Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. Unit Test Conditions V VGE = 0V, IC = 1mA 4.5 5.5 V IC = 0.25mA, VCE = VGE 1.80 2.10 V TJ = 25°C V TJ = 125°C 2.00 IC = 30A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 65 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 150 Cies Input Capacitance 1.90 Coes Output Capacitance 0.25 Cres Reverse Transfer Capacitance 0.10 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 60 50 50 120 130 100 140 0.25 0.38 0.28 0.44 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 30A, RG = 20Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 60A,VCC = 480V, VP =600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K30FF06Z Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 60 Diode Continuous Forward Current, TC = 80°C 30 Pulse Diode Current 60 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.40 1.70 1.40 30 Unit V A 35 1.5 µC 2.4 0.12 mJ 0.31 Test Conditions TJ = 25°C TJ = 125°C IF = 30A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝30A, di/dt=900A/μs, Vrr = 300V, VGE = -15V TJ = 125°C NTC-Thermistor Characteristic Values Parameter Typ. R25 TC =25°C R/R TC =100°C，R100 =481Ω P25 TC =25°C B25/50 B25/80 Max. 5 Unit kΩ % ±5 50 mW R2=R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K R2=R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.64 °C/W RθJC Junction-to-Case (Diode) 1.83 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Mounting Screw: M5 G Weight 3 www.irf.com © 2014 International Rectifier 1.5 2.0 24 Submit Datasheet Feedback N·m g September 2, 2014 IRG5K50P5K50PM06E IRG5K30FF06Z 60 60 VGE =15V TJ =125°C 50 TJ =125°C 50 VGE =17V VGE =15V VGE =13V TJ =25°C 40 VGE =11V VGE =9V IC (A) IC (A) 40 30 30 20 20 10 10 0 0.0 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 0 0.0 3.2 0.4 0.8 1.2 1.6 2.0 VCE (V) 2.4 VGE =0V TJ =125°C 50 VCE= 0 V,f=1MHz Cies 2.5 TJ =25°C Coes 2.0 C (nF) 40 30 1.5 20 1.0 10 0.5 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VF (V) 1.4 1.6 1.8 2.0 0.0 0 5 10 15 20 25 VCE (V) Fig.3 Typical Diode Forward Characteristics Fig. 4 Typical Capacitance Characteristics 1.0 1.0 VCC =300V,VGE =+/-15V, Rg =20 ohm,TJ =125°C 0.8 Erec Eoff Eon Erec E (mJ) 0.6 0.4 0.2 0.4 0.2 0 10 20 30 IC (A) 40 50 60 Fig.5 Typical Switching Loss vs. Collector Current 4 VCC =300V,VGE =+/-15V, IC =30A ,TJ =125°C 0.8 Eoff Eon 0.6 0.0 3.6 3.0 60 IF (A) 3.2 Fig.2 Typical IGBT Output Characteristics Fig.1 Typical IGBT Saturation Characteristics E (mJ) 2.8 www.irf.com © 2014 International Rectifier 0.0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K30FF06Z 60 70 Duty Cycle:50% TJ =125°C 50 Rg =20 ohm,VGE =15V 40 Load Current (A) 60 TC =80°C 50 40 IC (A) Square Wave: 30 Vcc 30 20 I 20 10 0 1 Module Chip 10 Diode as specified 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 100 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.8 2.5 ZthJC:Diode ZthJC:IGBT 2.0 0.6 ZthJC (K/W) ZthJC (K/W) 1.5 0.4 1.0 0.2 0.5 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 20 Rtyp 18 16 R (Kohm) 14 12 10 8 6 4 2 0 0 10 Fig. 11 5 20 30 40 50 60 70 TC (°C) 80 90 100 110 120 NTC Temperature Characteristics www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K30FF06Z Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014