IRG5K50P5K50PM06E
IRG5K35HF12A
IGBT Half-Bridge
POWIR 34™ Package
VCES = 1200V
IC = 35A at TC = 80⁰C
tSC ≥ 10µsec
VCE(ON) = 2.30V at IC = 35A
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 34™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5K35HF12A
POWIR 34™
Box
80
IRG5K35HF12A
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
35
A
TC = 25°C
70
A
ICM
Pulse Collector Current
TJ = 150°C
70
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
280
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5K35HF12A
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
Typ.
Max.
1200
4.5
Unit
Test Conditions
V
VGE = 0V, IC = 1mA
5.3
6.0
V
IC = 0.25mA, VCE = VGE
2.30
2.60
V
TJ = 25°C
V
TJ = 125°C
2.60
IC = 35A,
VGE = 15V
1
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
Max.
Unit
Switching Characteristics of IGBT
Parameter
Min.
Typ.
190
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
400
Cies
Input Capacitance
3.4
Coes
Output Capacitance
0.28
Cres
Reverse Transfer Capacitance
0.11
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
185
40
50
215
225
170
325
2.51
2.88
1.85
2.83
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 35A,
RG = 15Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f ＝1MHz, TJ = 25°C
IC = 70A,VCC = 960V,
VP = 1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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October 1, 2014
IRG5K50P5K50PM06E
IRG5K35HF12A
Absolute Maximum Ratings of Freewheeling Diode
VRRM
Repetitive Peak Reverse Voltage
IF
IFM
1200
Diode Continuous Forward Current, TC = 25°C
70
Diode Continuous Forward Current, TC = 80°C
35
Pulse Diode Current
70
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
1.80
2.70
2.00
25
Unit
V
A
30
2.8
µC
4.0
0.9
mJ
1.7
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 35A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF＝35A,
di/dt= 960A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.44
°C/W
RθJC
Junction-to-Case (Diode)
0.81
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M5
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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October 1, 2014
IRG5K50P5K50PM06E
IRG5K35HF12A
70
70
VGE =15V
TJ =125°C
60
TJ =25°C
50
VGE =13V
VGE =11V
40
VGE =9V
IC (A)
IC (A)
VGE =17V
VGE =15V
50
40
30
30
20
20
10
10
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
0
0.0
4.2
Fig.1 Typical IGBT Saturation Characteristics
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
4.8
Fig.2 Typical IGBT Output Characteristics
70
5
VGE =0V
TJ =125°C
60
VCE= 0 V,f=1MHz
Cies
4
TJ =25°C
50
Coes
3
C (nF)
40
IF (A)
TJ =125°C
60
30
2
20
1
10
0
0.0
0.4
0.8
1.2
1.6
VF (V)
2.0
2.4
2.8
0
3.2
Fig.3 Typical Diode Forward Characteristics
5
Eoff
Eon
VCE (V)
15
20
25
4
Erec
VCC =600V,VGE =+/-15V,
IC =35A ,TJ =125°C
5
Eoff
Eon
4
E (mJ)
E (mJ)
10
6
VCC=600V,VGE=+/-15V,
Rg=15 ohm,TJ =125°C
6
3
Erec
3
2
2
1
1
0
10
20
30
IC (A)
40
50
60
70
Fig.5 Typical Switching Loss vs. Collector Current
4
5
Fig. 4 Typical Capacitance Characteristics
7
0
0
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0
0
5
10
15
20
Rg ()
25
30
35
40
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5K35HF12A
60
70
Duty Cycle:50%
TJ =125°C
50
60
Rg=15 ohm,VGE =15V
40
50
Square Wave:
IC (A)
Load Current (A)
TC =80°C
Vcc
30
30
I
20
40
20
10
0
Diode as specified
1
Module
Chip
10
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
400
600
800
VCES (V)
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.5
1.0
ZthJC:Diode
ZthJC:IGBT
0.8
ZthJC (K/W)
0.4
ZthJC (K/W)
0.3
0.2
0.1
0.0
0.001
200
0.6
0.4
0.2
0.01
0.1
1
2
t (s)
0.0
0.001
0.01
0.1
1
2
t (s)
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5K35HF12A
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
6
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