IRG5K50FF06E

IRG5K50P5K50PM06E IRG5K50FF06E IGBT Six-Pack POWIR ECO 2™ Package VCES = 600V IC = 50A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 50A Applications：  Industrial Motor Drive Servo drive Uninterruptible Power Supply AC Inverter Drive    Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR ECO 2™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K50FF06E POWIR ECO 2™ Box 80 IRG5K50FF06E Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 50 A TC = 25°C 100 A ICM Pulse Collector Current TJ = 150°C 100 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 245 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K50FF06E Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. Unit Test Conditions V VGE = 0V, IC = 1mA 4.5 5.5 V IC = 0.25mA, VCE = VGE 1.80 2.10 V TJ = 25°C V TJ = 125°C 2.00 IC = 50A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 110 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 260 Cies Input Capacitance 3.0 Coes Output Capacitance 0.35 Cres Reverse Transfer Capacitance 0.14 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 100 75 80 220 240 90 110 0.68 0.78 0.75 0.92 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 50A, RG = 30Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 100A,VCC = 480V, VP =600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K50FF06E Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 100 Diode Continuous Forward Current, TC = 80°C 50 Pulse Diode Current 100 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.40 1.70 1.40 30 Unit V A 40 2.4 µC 3.6 0.25 mJ 0.70 Test Conditions TJ = 25°C TJ = 125°C IF = 50A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝50A, di/dt=840A/μs, Vrr = 300V, VGE = -15V TJ = 125°C NTC-Thermistor Characteristic Values Parameter Typ. R25 TC =25°C R/R TC =100°C，R100 =481Ω P25 TC =25°C B25/50 B25/80 Max. 5 Unit kΩ ±5 % 50 mW R2=R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K R2=R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.515 °C/W RθJC Junction-to-Case (Diode) 1.41 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.10 °C/W M Mounting Screw: M6 G Weight 3 www.irf.com © 2014 International Rectifier 4.0 6.0 N·m 200 g Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K50FF06E 100 100 90 90 VGE =15V TJ =125°C 80 TJ =25°C 70 TJ =125°C VGE =17V VGE =15V VGE =13V 80 70 60 IC (A) 60 VGE =11V VGE =9V IC (A) 50 50 40 40 30 30 20 20 10 10 0 0.0 0.4 0.8 1.2 1.6 VCE (V) 2.0 2.4 2.8 0 0.0 3.2 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 VCE (V) 2.4 3.0 3.6 Fig.2 Typical IGBT Output Characteristics 100 6 VGE =0V TJ =125°C 90 80 VCE= 0 V,f=1MHz Cies TJ =25°C 70 Coes 4 C (nF) IF (A) 60 50 40 2 30 20 10 0 0.0 0.3 0.6 0.9 VF (V) 1.2 1.5 0 1.8 15 20 25 2.0 VCC =300V,VGE =+/-15V, Rg =30 ohm,TJ =125°C 2.0 VCC =300V,VGE =+/-15V, IC =50A,TJ =125°C Eoff Eon Eoff Eon 1.5 E (mJ) Erec 1.5 E (mJ) 10 Fig. 4 Typical Capacitance Characteristics 2.5 1.0 Erec 1.0 0.5 0.5 0 10 20 30 40 50 60 IC (A) 70 80 90 100 Fig.5 Typical Switching Loss vs. Collector Current 4 5 VCE (V) Fig.3 Typical Freewheeling Diode Characteristics 0.0 0 www.irf.com © 2014 International Rectifier 0.0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K50FF06E 80 Duty Cycle:50% TJ =125°C 70 TC =80°C 60 Rg=30 ohm,VGE =15V 50 100 80 Square Wave: IC (A) Load Current (A) 90 Vcc 40 30 40 I 20 0 20 Diode as specified 10 60 1 10 Frequency(KHz) 0 100 Fig.7 Typical Load Current vs. Frequency Module Chip 0 100 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.6 1.8 ZthJC:IGBT 0.5 1.5 ZthJC (K/W) 1.2 ZthJC (K/W) 0.4 ZthJC:Diode 0.3 0.2 0.1 0.9 0.6 0.3 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 20 Rtyp 18 16 R (Kohm) 14 12 10 8 6 4 2 0 0 10 Fig. 11 5 20 30 40 50 60 70 TC (°C) 80 90 100 110 120 NTC Temperature Characteristics www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5K50FF06E Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014