IRG5K50HF06A

IRG5K50P5K50PM06E IRG5K50HF06A IGBT Half-Bridge POWIR 34™ Package VCES = 600V IC = 50A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 1.80V at IC = 50A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5K50HF06A POWIR 34™ Box 80 IRG5K50HF06A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 50 A TC = 25°C 100 A ICM Pulse Collector Current TJ = 150°C 100 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 245 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K50HF06A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. Unit Test Conditions V VGE = 0V, IC = 1mA 4.5 5.5 V IC = 0.25mA, VCE = VGE 1.80 2.10 V TJ = 25°C V TJ = 125°C 2.00 IC = 50A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 110 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 260 Cies Input Capacitance 3.0 Coes Output Capacitance 0.35 Cres Reverse Transfer Capacitance 0.14 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 100 75 80 220 240 90 110 0.68 0.78 0.75 0.92 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 50A, RG = 30Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 100A,VCC = 480V, VP = 600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K50HF06A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 100 Diode Continuous Forward Current, TC = 80°C 50 Pulse Diode Current 100 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.40 1.70 1.40 30 Unit V A 40 2.4 µC 3.6 0.25 mJ 0.59 Test Conditions TJ = 25°C TJ = 125°C IF = 50A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝50A, di/dt= 840A/μs, Vrr = 300V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.51 °C/W RθJC Junction-to-Case (Diode) 1.45 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG5K50HF06A 100 100 VGE =15V TJ =125°C 90 80 90 TJ =25°C 70 VGE =17V VGE =15V VGE =13V 70 60 VGE =11V VGE =9V IC (A) 60 IC (A) TJ =125°C 80 50 50 40 40 30 30 20 20 10 10 0 0.0 0.6 1.2 1.8 VCE (V) 2.4 3.0 0 0.0 3.6 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 VCE (V) 2.4 3.0 3.6 Fig.2 Typical IGBT Output Characteristics 100 6 VGE =0V TJ =125°C 90 80 VCE= 0 V,f=1MHz Cies TJ =25°C 70 Coes 4 C (nF) IF (A) 60 50 40 2 30 20 10 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 0 2.4 Fig.3 Typical Diode Forward Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 2.5 2.0 VCC =300V,VGE =+/-15V, Rg =30 ohm,TJ =125°C 2.0 Eoff Eon Erec 1.5 VCC =300V,VGE =+/-15V, IC =50A,TJ =125°C 1.5 E (mJ) E (mJ) 0 Eoff Eon Erec 1.0 1.0 0.5 0.5 0.0 0 10 20 30 40 50 60 IC (A) 70 80 90 100 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0.0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K50HF06A 80 Duty Cycle:50% TJ =125°C 70 TC =80°C 60 Rg=30 ohm,VGE =15V 50 100 80 Square Wave: Vcc 40 30 60 IC (A) Load Current (A) 90 40 I 20 0 20 Diode as specified 10 1 10 Frequency (KHz) Fig.7 Typical Load Current vs. Frequency 0 100 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.6 0.5 0 100 Module Chip 2.0 ZthJC:Diode ZthJC:IGBT 1.6 0.4 ZthJC (K/W) ZthJC (K/W) 1.2 0.3 0.8 0.2 0.4 0.1 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5K50HF06A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014