IRG5K50P5K50PM06E
IRG5K75FF06E
IGBT Six-Pack
POWIR ECO 2™ Package
VCES = 600V
IC = 75A at TC = 80⁰C
tSC ≥ 10µsec
VCE(ON) = 1.80V at IC = 75A
Applications:
Industrial Motor Drive
Servo drive
Uninterruptible Power Supply
AC Inverter Drive
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR ECO 2™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5K75FF06E
POWIR ECO 2™
Box
80
IRG5K75FF06E
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
600
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
75
A
TC = 25°C
140
A
ICM
Pulse Collector Current
TJ = 150°C
150
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
330
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5K75FF06E
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
600
VGE(th)
Gate Threshold Voltage
3.5
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
Typ.
Max.
Unit
Test Conditions
V
VGE = 0V, IC = 1mA
4.5
5.5
V
IC = 0.25mA, VCE = VGE
1.80
2.10
V
TJ = 25°C
V
TJ = 125°C
2.00
IC = 75A,
VGE = 15V
1
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
Max.
Unit
Switching Characteristics of IGBT
Parameter
Min.
Typ.
105
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
260
Cies
Input Capacitance
3.6
Coes
Output Capacitance
0.45
Cres
Reverse Transfer Capacitance
0.18
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
100
90
90
240
250
90
110
0.52
0.93
0.90
1.43
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=300V,
IC = 75A,
RG = 20Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 150A,VCC = 480V,
VP =600V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 300V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5K75FF06E
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
600
Diode Continuous Forward Current, TC = 25°C
150
Diode Continuous Forward Current, TC = 80°C
75
Pulse Diode Current
150
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
1.50
1.80
1.50
40
Unit
V
A
50
2.9
µC
4.7
0.38
mJ
0.95
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 75A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=75A,
di/dt=840A/μs,
Vrr = 300V,
VGE = -15V
TJ = 125°C
NTC-Thermistor Characteristic Values
Parameter
Typ.
R25
TC =25°C
R/R
TC =100°C,R100 =481Ω
P25
TC =25°C
B25/50
B25/80
Max.
5
Unit
kΩ
±5
%
50
mW
R2=R25 exp[B25/50(1/T2-1/(298.15K))]
3380
K
R2=R25 exp[B25/80(1/T2-1/(298.15K))]
3440
K
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.38
°C/W
RθJC
Junction-to-Case (Diode)
1.06
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.10
°C/W
M
Mounting Screw: M6
G
Weight
3
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4.0
6.0
N·m
200
g
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IRG5K50P5K50PM06E
IRG5K75FF06E
150
150
VGE =15V
TJ =125°C
135
120
135
TJ =25°C
105
VGE =17V
VGE =15V
105
VGE =13V
VGE =11V
90
IC (A)
90
IC (A)
TJ =125°C
120
75
60
75
45
45
30
30
15
15
0
0.0
0.4
0.8
1.2
1.6
VCE (V)
2.0
2.4
2.8
VGE =9V
60
0
0.0
3.2
Fig.1 Typical IGBT Saturation Characteristics
0.4
0.8
1.2
1.6
VCE (V)
2.0
2.4
2.8
3.2
Fig.2 Typical IGBT Output Characteristics
6
150
135
VGE =0V
TJ =125°C
120
Coes
TJ =25°C
105
VCE= 0 V,f=1MHz
Cies
5
4
C (nF)
IF (A)
90
75
3
60
2
45
30
1
15
0
0.0
0.2
0.4
0.6
0.8
1.0 1.2
VF (V)
1.4
1.6
1.8
0
2.0
5
10
15
20
25
VCE (V)
Fig.3 Typical Freewheeling Diode Characteristics
Fig. 4 Typical Capacitance Characteristics
3.0
4.5
VCC =300V,VGE =+/-15V,
Rg =20 ohm,TJ =125°C
3.5
3.0
Eoff
Eon
2.5
Erec
VCC =300V,VGE =+/-15V,
IC =75A,TJ =125°C
2.5
Eoff
Eon
2.0
E (mJ)
4.0
E (mJ)
0
2.0
Erec
1.5
1.0
1.5
1.0
0.5
0.5
0.0
0
15
30
45
60
75
90
IC (A)
105
120
135
150
Fig.5 Typical Switching Loss vs. Collector Current
4
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0.0
0
5
10
15
20
25
30
Rg ()
35
40
45
50
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5K75FF06E
120
Duty Cycle:50%
TJ =125°C
105
150
TC =80°C
90
125
Rg=20 ohm,VGE =15V
100
Square Wave:
60
IC (A)
Load Current (A)
75
Vcc
75
45
I
50
30
15
0
1
Module
Chip
25
Diode as specified
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
100
200
300
400
VCES (V)
500
600
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
1.2
0.5
ZthJC:IGBT
1.0
0.4
ZthJC:Diode
ZthJC (K/W)
ZthJC (K/W)
0.8
0.3
0.6
0.2
0.4
0.1
0.2
0.0
0.001
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t (s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
20
Rtyp
18
16
R (Kohm)
14
12
10
8
6
4
2
0
0
10
Fig. 11
5
20
30
40
50
60 70
TC (°C)
80
90 100 110 120
NTC Temperature Characteristics
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IRG5K50P5K50PM06E
IRG5K75FF06E
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
6
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September 2, 2014