IRG5K50P5K50PM06E
IRG5U100HF06A
IGBT Half-Bridge
POWIR 34™ Package
VCES = 600V
IC = 100A at TC = 80⁰C
tSC ≥ 10µsec
VCE(ON) = 2.60V at IC = 100A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 34™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5U100HF06A
POWIR 34™
Box
80
IRG5U100HF06A
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
600
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
100
A
TC = 25°C
130
A
ICM
Pulse Collector Current
TJ = 150°C
200
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
400
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5U100HF06A
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
600
VGE(th)
Gate Threshold Voltage
3.5
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
Typ.
Max.
Unit
Test Conditions
V
VGE = 0V, IC = 1mA
4.5
5.5
V
IC = 0.25mA, VCE = VGE
2.60
2.90
V
TJ = 25°C
V
TJ = 125°C
3.00
IC = 100A,
VGE = 15V
1
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
Max.
Unit
Switching Characteristics of IGBT
Parameter
Min.
Typ.
130
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
530
Cies
Input Capacitance
6.1
Coes
Output Capacitance
0.64
Cres
Reverse Transfer Capacitance
0.26
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
135
100
100
350
805
85
115
1.43
1.77
1.02
3.36
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=300V,
IC = 100A,
RG = 20Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 200A,VCC = 480V,
VP = 600V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 300V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5U100HF06A
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
600
Diode Continuous Forward Current, TC = 25°C
200
Diode Continuous Forward Current, TC = 80°C
100
Pulse Diode Current
200
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
1.50
1.80
1.50
50
Unit
V
A
60
3.0
µC
5.3
0.5
mJ
1.0
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 100A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=100A,
di/dt=1100A/μs,
Vrr = 300V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.31
°C/W
RθJC
Junction-to-Case (Diode)
1.05
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M5
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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October 1, 2014
IRG5K50P5K50PM06E
IRG5U100HF06A
200
200
VGE =15V
TJ =125°C
180
160
180
TJ =25°C
140
VGE =17V
VGE =15V
140
VGE =13V
VGE =11V
120
IC (A)
120
IC (A)
TJ =125°C
160
100
80
100
60
60
40
40
20
20
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
VGE =9V
80
0
0.0
4.8
Fig.1 Typical IGBT Saturation Characteristics
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
4.8
Fig.2 Typical IGBT Output Characteristics
200
12
VGE =0V
TJ =125°C
180
160
VCE= 0 V,f=1MHz
Cies
10
TJ =25°C
Coes
140
8
C (nF)
IF (A)
120
100
6
80
4
60
40
2
20
0
0.0
0.4
0.8
1.2
VF (V)
1.6
2.0
0
2.4
Fig.3 Typical Diode Forward Characteristics
VCE (V)
15
20
25
E (mJ)
5
VCC =300V,VGE =+/-15V,
IC =100A,TJ =125°C
6
Eoff
Eon
Erec
6
E (mJ)
10
7
VCC =300V,VGE =+/-15V,
Rg =20 ohm,TJ =125°C
7
4
3
5
Eoff
Eon
4
Erec
3
2
2
1
1
0
20
40
60
80
100 120
IC (A)
140
160
180
200
Fig.5 Typical Switching Loss vs. Collector Current
4
5
Fig. 4 Typical Capacitance Characteristics
8
0
0
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0
0
5
10
15
20
25
30
Rg ()
35
40
45
50
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5U100HF06A
120
Duty Cycle:50%
TJ =125°C
200
TC =80°C
Rg=20 ohm,VGE =15V
80
150
Square Wave:
60
IC (A)
Load Current(A)
100
Vcc
100
I
40
50
20
0
Diode as specified
1
Module
Chip
10
Frequency(KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
100
200
300
400
VCES (V)
500
600
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.4
1.2
ZthJC:IGBT
1.0
ZthJC:Diode
0.3
ZthJC (K/W)
ZthJC (K/W)
0.8
0.2
0.6
0.4
0.1
0.2
0.0
0.001
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t (s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5U100HF06A
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
6
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