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IRG5U100HF12B

IRG5U100HF12B

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®62

  • 描述:

    MOD IGBT 1200V 100A POWIR 62

  • 数据手册
  • 价格&库存
IRG5U100HF12B 数据手册
IRG5K50P5K50PM06E IRG5U100HF12B IGBT Half-Bridge POWIR 62™ Package VCES = 1200V IC = 100A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 3.20V at IC = 100A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U100HF12B POWIR 62™ Box 45 IRG5U100HF12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 100 A TC = 25°C 180 A ICM Pulse Collector Current TJ = 150°C 200 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 780 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U100HF12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 2mA 5.3 6.0 V IC = 1mA, VCE = VGE 3.20 3.50 V TJ = 25°C V TJ = 125°C 3.80 IC = 100A, VGE = 15V 2 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 2.35 Ω Switching Characteristics of IGBT Parameter Min. Typ. 170 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1230 Cies Input Capacitance 12.0 Coes Output Capacitance 0.90 Cres Reverse Transfer Capacitance 0.36 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 160 90 100 450 475 120 145 7.20 9.70 2.80 4.50 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 100A, RG = 10Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 200A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U100HF12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 200 Diode Continuous Forward Current, TC = 80°C 100 Pulse Diode Current 200 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 70 90 5.5 11.1 2.2 4.6 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 100A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=100A, di/dt=1400A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.16 °C/W RθJC Junction-to-Case (Diode) 0.41 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG5U100HF12B 200 200 VGE =15V TJ =125°C 180 160 180 TJ =25°C 140 VGE =17V VGE =15V 140 VGE =13V VGE =11V 120 IC (A) 120 100 100 IC (A) TJ =125°C 160 80 60 60 40 40 20 20 0 0.0 0.6 1.2 1.8 2.4 3.0 VCE (V) 3.6 4.2 4.8 VGE =9V 80 0 0.0 5.4 0.6 1.2 1.8 2.4 3.0 VCE (V) 3.6 4.2 4.8 Fig.1 Typical IGBT Saturation Characteristics Fig.2 Typical IGBT Output Characteristics 200 18 VGE =0V TJ =125°C 180 160 VCE= 0 V,f=1MHz Cies 15 Coes TJ =25°C 140 5.4 12 C (nF) IF (A) 120 100 9 80 6 60 40 3 20 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 Fig.3 Typical Freewheeling Diode Characteristics VCE (V) 15 20 25 15 VCC =600V,VGE =+/-15V, IC =100A,TJ =125°C 27 24 Eoff Eon 18 Erec E (mJ) E (mJ) 10 30 VCC =600V,VGE =+/-15V, Rg =10 ohm,TJ =125°C 21 12 21 Eoff Eon 18 Erec 15 12 9 9 6 6 3 3 0 20 40 60 80 100 120 IC (A) 140 160 180 200 Fig.5 Typical Switching Loss vs. Collector Current 4 5 Fig. 4 Typical Capacitance Characteristics 24 0 0 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U100HF12B 140 Duty Cycle:50% TJ =125°C 120 TC =80°C 200 Rg =10 ohm,VGE =15V 100 Square Wave: 80 150 IC (A) Load Current (A) 160 Vcc 100 60 I 40 50 20 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.20 0.5 ZthJC:Diode ZthJC:IGBT 0.4 0.15 0.3 ZthJC (K/W) ZthJC (K/W) 200 0.10 0.2 0.05 0.1 0.00 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U100HF12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014
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