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IRG5U150HF06A

IRG5U150HF06A

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®34

  • 描述:

    IGBT Module Half Bridge 600V 200A 660W Chassis Mount POWIR® 34

  • 数据手册
  • 价格&库存
IRG5U150HF06A 数据手册
IRG5K50P5K50PM06E IRG5U150HF06A IGBT Half-Bridge POWIR 34™ Package VCES = 600V IC = 150A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 2.60V at IC = 150A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U150HF06A POWIR 34™ Box 80 IRG5U150HF06A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 150 A TC = 25°C 200 A ICM Pulse Collector Current TJ = 150°C 300 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 660 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U150HF06A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. Unit Test Conditions V VGE = 0V, IC = 1mA 4.5 5.5 V IC = 0.50mA, VCE = VGE 2.60 2.90 V TJ = 25°C V TJ = 125°C 3.00 IC = 150A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 125 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 800 Cies Input Capacitance 8.5 Coes Output Capacitance 0.95 Cres Reverse Transfer Capacitance 0.38 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 120 100 115 285 690 120 145 1.78 2.35 1.23 3.55 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 150A, RG = 20Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 300A,VCC = 480V, VP = 600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U150HF06A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 300 Diode Continuous Forward Current, TC = 80°C 150 Pulse Diode Current 300 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.40 1.70 1.40 65 Unit V A 80 4.6 µC 8.2 0.95 mJ 2.00 Test Conditions TJ = 25°C TJ = 125°C IF = 150A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=150A, di/dt=1000A/μs, Vrr = 300V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.19 °C/W RθJC Junction-to-Case (Diode) 0.69 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG5U150HF06A 300 300 VGE =15V TJ =125°C 270 240 270 TJ =25°C 210 TJ =125°C VGE =17V VGE =15V 240 210 VGE =13V VGE =11V IC (A) 180 IC (A) 180 150 120 150 90 90 60 60 30 30 0 0.0 0.6 1.2 1.8 2.4 VCE (V) 3.0 3.6 4.2 VGE =9V 120 0 0.0 4.8 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 3.0 VCE (V) 3.6 4.2 4.8 5.4 Fig.2 Typical IGBT Output Characteristics 300 14 VGE =0V TJ =125°C 270 240 TJ=25°C 210 VCE= 0 V,f=1MHz Cies 12 Coes 10 180 8 C (nF) IF (A) 150 6 120 90 4 60 2 30 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 0 2.4 Fig.3 Typical Diode Forward Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 10 8 VCC =300V,VGE =+/-15V, Rg =20 ohm,TJ =125°C 8 VCC =300V,VGE =+/-15V, IC =150A,TJ =125°C 7 Eoff Eon Eoff Eon 6 5 Erec E (mJ) 6 E (mJ) 0 4 Erec 4 3 2 2 1 0 0 30 60 90 120 150 180 IC (A) 210 240 270 300 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U150HF06A 210 180 300 TC =80°C 250 Rg=20 ohm,VGE =15V 200 120 IC (A) Load Current (A) 150 Duty Cycle:50% TJ =125°C Square Wave: 100 I 60 30 0 150 Vcc 90 50 Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency Module Chip 0 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.8 0.25 ZthJC:IGBT ZthJC:Diode 0.20 0.6 0.15 ZthJC (K/W) ZthJC (K/W) 100 0.10 0.4 0.2 0.05 0.00 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U150HF06A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014
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