IRG5K50P5K50PM06E
IRG5U150HF06A
IGBT Half-Bridge
POWIR 34™ Package
VCES = 600V
IC = 150A at TC = 80⁰C
tSC ≥ 10µsec
VCE(ON) = 2.60V at IC = 150A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 34™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5U150HF06A
POWIR 34™
Box
80
IRG5U150HF06A
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
600
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
150
A
TC = 25°C
200
A
ICM
Pulse Collector Current
TJ = 150°C
300
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
660
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5U150HF06A
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
600
VGE(th)
Gate Threshold Voltage
3.5
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
Unit
Test Conditions
V
VGE = 0V, IC = 1mA
4.5
5.5
V
IC = 0.50mA, VCE = VGE
2.60
2.90
V
TJ = 25°C
V
TJ = 125°C
3.00
IC = 150A,
VGE = 15V
1
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
1.25
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
125
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
800
Cies
Input Capacitance
8.5
Coes
Output Capacitance
0.95
Cres
Reverse Transfer Capacitance
0.38
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
120
100
115
285
690
120
145
1.78
2.35
1.23
3.55
Max.
Unit
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=300V,
IC = 150A,
RG = 20Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 300A,VCC = 480V,
VP = 600V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 300V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5U150HF06A
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
600
Diode Continuous Forward Current, TC = 25°C
300
Diode Continuous Forward Current, TC = 80°C
150
Pulse Diode Current
300
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
1.40
1.70
1.40
65
Unit
V
A
80
4.6
µC
8.2
0.95
mJ
2.00
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 150A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=150A,
di/dt=1000A/μs,
Vrr = 300V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.19
°C/W
RθJC
Junction-to-Case (Diode)
0.69
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M5
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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October 1, 2014
IRG5K50P5K50PM06E
IRG5U150HF06A
300
300
VGE =15V
TJ =125°C
270
240
270
TJ =25°C
210
TJ =125°C
VGE =17V
VGE =15V
240
210
VGE =13V
VGE =11V
IC (A)
180
IC (A)
180
150
120
150
90
90
60
60
30
30
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
VGE =9V
120
0
0.0
4.8
Fig.1 Typical IGBT Saturation Characteristics
0.6
1.2
1.8
2.4
3.0
VCE (V)
3.6
4.2
4.8
5.4
Fig.2 Typical IGBT Output Characteristics
300
14
VGE =0V
TJ =125°C
270
240
TJ=25°C
210
VCE= 0 V,f=1MHz
Cies
12
Coes
10
180
8
C (nF)
IF (A)
150
6
120
90
4
60
2
30
0
0.0
0.4
0.8
1.2
VF (V)
1.6
2.0
0
2.4
Fig.3 Typical Diode Forward Characteristics
5
10
VCE (V)
15
20
25
Fig. 4 Typical Capacitance Characteristics
10
8
VCC =300V,VGE =+/-15V,
Rg =20 ohm,TJ =125°C
8
VCC =300V,VGE =+/-15V,
IC =150A,TJ =125°C
7
Eoff
Eon
Eoff
Eon
6
5
Erec
E (mJ)
6
E (mJ)
0
4
Erec
4
3
2
2
1
0
0
30
60
90
120
150 180
IC (A)
210
240
270
300
Fig.5 Typical Switching Loss vs. Collector Current
4
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0
0
5
10
15
20
25
30
Rg ()
35
40
45
50
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5U150HF06A
210
180
300
TC =80°C
250
Rg=20 ohm,VGE =15V
200
120
IC (A)
Load Current (A)
150
Duty Cycle:50%
TJ =125°C
Square Wave:
100
I
60
30
0
150
Vcc
90
50
Diode as specified
1
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
Module
Chip
0
200
300
400
VCES (V)
500
600
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.8
0.25
ZthJC:IGBT
ZthJC:Diode
0.20
0.6
0.15
ZthJC (K/W)
ZthJC (K/W)
100
0.10
0.4
0.2
0.05
0.00
0.001
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t (s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5U150HF06A
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
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