0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
IRG5U150HF12B

IRG5U150HF12B

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®62

  • 描述:

    MOD IGBT 1200V 150A POWIR 62

  • 数据手册
  • 价格&库存
IRG5U150HF12B 数据手册
IRG5K50P5K50PM06E IRG5U150HF12B IGBT Half-Bridge POWIR 62™ Package VCES = 1200V IC = 150A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 3.20V at IC = 150A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U150HF12B POWIR 62™ Box 45 IRG5U150HF12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 150 A TC = 25°C 260 A ICM Pulse Collector Current TJ = 150°C 300 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 1100 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U150HF12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 2mA 5.3 6.0 V IC = 1.5mA, VCE = VGE 3.20 3.50 V TJ = 25°C V TJ = 125°C 3.80 IC = 150A, VGE = 15V 2 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 1.25 Ω Switching Characteristics of IGBT Parameter Min. Typ. 200 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 1890 Cies Input Capacitance 18.0 Coes Output Capacitance 1.63 Cres Reverse Transfer Capacitance 0.65 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 185 110 120 510 540 125 150 8.4 11.3 5.7 8.1 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 150A, RG = 6.2Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 300A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U150HF12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 300 Diode Continuous Forward Current, TC = 80°C 150 Pulse Diode Current 300 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 85 120 8.0 13.4 3.6 6.1 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 150A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=150A, di/dt=1700A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.114 °C/W RθJC Junction-to-Case (Diode) 0.28 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 230 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG5U150HF12B 300 300 VGE = 15V TJ = 125°C 270 240 210 180 180 VGE =13V VGE =11V 150 150 VGE =9V IC (A) IC (A) VGE =17V VGE =15V 240 TJ = 25°C 210 TJ =125°C 270 120 120 90 90 60 60 30 30 0 0.0 0.6 1.2 1.8 2.4 3.0 VCE (V) 3.6 4.2 4.8 0 0.0 5.4 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 3.0 3.6 VCE (V) 4.2 4.8 5.4 6.0 6.6 Fig.2 Typical IGBT Output Characteristics 300 30 VGE= 0V TJ =125°C 270 240 VGE =0V,f =1 MHz Cies 25 Coes TJ =25°C 210 20 IF (A) C (nF) 180 150 120 15 10 90 60 5 30 0 0.0 0.6 1.2 1.8 2.4 VF (V) 3.0 3.6 0 4.2 Fig.3 Typical Freewheeling Diode Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 25 35 VCC =600V,VGE =+/-15V, Rg =6.2ohm,TJ =125°C 15 VCC=600V,VGE=+/-15V, IC =150A,TJ =125°C 30 Eoff Eon 25 Erec 20 E (mJ) 20 E (mJ) 0 10 Eoff Eon Erec 15 10 5 5 0 0 30 60 90 120 150 180 IC (A) 210 240 270 300 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 Rg () 20 25 30 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U150HF12B 180 Duty Cycle:50% TJ =125°C 150 400 Rg =6.2 ohm,VGE =15V 300 Square Wave: 90 IC (A) Load Current (A) TC =80°C 120 Vcc 60 200 I 100 30 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.4 0.15 ZthJC:IGBT ZthJC:Didoe 0.3 ZthJC (K/W) ZthJC (K/W) 0.10 0.2 0.05 0.1 0.00 0.001 0.01 t ( s) 0.1 1 2 0.0 0.001 0.01 t ( s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U150HF12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014
IRG5U150HF12B 价格&库存

很抱歉,暂时无法提供与“IRG5U150HF12B”相匹配的价格&库存,您可以联系我们找货

免费人工找货