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IRG5U200SD12B

IRG5U200SD12B

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®62

  • 描述:

    MOD IGBT 1200V 200A POWIR 62

  • 数据手册
  • 价格&库存
IRG5U200SD12B 数据手册
IRG5K50P5K50PM06E IRG5U200SD12B VCES = 1200V IC = 200A at TC = 80°C Single Switch IGBT with Soft Recovery Diode POWIR 62™ Package tSC ≥ 10µsec VCE (ON) = 3.20V at IC = 200A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U200SD12B POWIR 62™ Box 45 IRG5U200SD12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 200 A TC = 25°C 320 A ICM Pulse Collector Current TJ = 150°C 400 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 1430 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U200SD12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 3mA 5.3 6.0 V IC = 2mA, VCE = VGE 3.20 3.50 V TJ = 25°C V TJ = 125°C 3.80 IC = 200A, VGE = 15V 3 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 0.62 Ω Switching Characteristics of IGBT Parameter Min. Typ. 460 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 2500 Cies Input Capacitance 23.0 Coes Output Capacitance 1.81 Cres Reverse Transfer Capacitance 0.72 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 440 280 280 1220 1300 130 160 14.4 18.4 4.0 7.6 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 200A, RG = 15 Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 400A,VCC = 960V, VP =1200V, RG = 4.7Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U200SD12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 400 Diode Continuous Forward Current, TC = 80°C 200 Pulse Diode Current 400 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.00 2.70 2.20 160 180 12.4 22.4 4.08 8.04 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 200A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=200A, di/dt=2400A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.087 °C/W RθJC Junction-to-Case (Freewheeling Diode) 0.217 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 310 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG5U200SD12B 400 400 VGE =15V TJ =125°C 360 320 280 240 240 VGE =13V VGE =11V 200 200 VGE =9V IC (A) IC (A) VGE =17V VGE =15V 320 TJ =25°C 280 TJ =125°C 360 160 160 120 120 80 80 40 40 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE (V) 3.5 4.0 4.5 5.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 VCE (V) 5.5 Fig.1 Typical IGBT Saturation Characteristics Fig.2 Typical IGBT Output Characteristics 400 40 VGE =0V TJ =125°C 360 320 25 IF (A) C (nF) 240 200 160 20 15 120 10 80 5 40 0 0.0 0.5 1.0 1.5 2.0 VF (V) 2.5 3.0 0 3.5 Fig.3 Typical Freewheeling Diode Characteristics 0 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 50 40 VCC =600V,VGE =+/-15V, Rg = 15 ohm,TJ =125°C 35 30 Eoff Eon 25 Erec VCC =600V,VGE =+/-15V, IC =200A,TJ =125°C 40 Eoff Eon Erec 30 E (mJ) E (mJ) Coes 30 TJ =25°C 280 VGE = 0V,f =1 MHz Cies 35 20 15 10 20 10 5 0 0 40 80 120 160 200 240 IC (A) 280 320 360 400 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U200SD12B 320 280 Duty Cycle:50% TJ =125°C 240 TC =80°C Rg =15 ohm,VGE =15V 200 Load Current (A) 400 300 IC (A) Square Wave: 160 Vcc 200 120 I 80 100 40 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.10 0.25 ZthJC:Didoe ZthJC:IGBT 0.20 0.06 0.15 ZthJC (K/W) ZthJC (K/W) 0.08 0.04 0.02 0.10 0.05 0.00 0.001 0.01 t (s) 0.1 1 2 0.00 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U200SD12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014
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