IRG5K50P5K50PM06E
IRG5U300SD12B
VCES = 1200V
IC = 300A at TC = 80°C
Single Switch IGBT with Soft Recovery Diode
POWIR 62™ Package
tSC ≥ 10µsec
VCE(ON) = 3.20V at IC = 300A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 62™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5U300SD12B
POWIR 62™
Box
45
IRG5U300SD12B
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
300
A
TC = 25°C
480
A
ICM
Pulse Collector Current
TJ = 150°C
600
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
2170
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5U300SD12B
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
1200
4.5
Unit
Test Conditions
V
VGE = 0V, IC = 3mA
5.3
6.0
V
IC = 3mA, VCE = VGE
3.20
3.50
V
TJ = 25°C
V
TJ = 125°C
3.80
IC = 300A,
VGE = 15V
3
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
0.62
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
640
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
4000
Cies
Input Capacitance
38.0
Coes
Output Capacitance
2.76
Cres
Reverse Transfer Capacitance
1.10
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
600
360
400
1780
1800
130
160
15.2
21.1
9.8
17.5
Max.
Unit
ns
ns
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 300A,
RG = 4.7Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 600A,VCC = 960V,
VP =1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5U300SD12B
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
600
Diode Continuous Forward Current, TC = 80°C
300
Pulse Diode Current
600
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.20
2.70
2.40
170
240
16.4
32.8
10.2
18.4
Unit
V
A
µC
mJ
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 300A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=300A,
di/dt=3000A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.057
°C/W
RθJC
Junction-to-Case (Freewheeling Diode)
0.140
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M6
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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IRG5K50P5K50PM06E
IRG5U300SD12B
600
600
VGE =15V
TJ =125°C
540
VGE =17V
VGE =15V
480
TJ =25°C
420
420
360
360
VGE =13V
VGE =11V
300
300
VGE =9V
IC (A)
IC (A)
480
TJ =125°C
540
240
240
180
180
120
120
60
60
0
0.0
0.6
1.2
1.8
2.4
3.0
VCE (V)
3.6
4.2
4.8
0
0.0
5.4
Fig.1 Typical IGBT Saturation Characteristics
0.6
1.2
1.8
2.4
3.0 3.6
VCE (V)
4.2
5.4
6.0
6.6
Fig.2 Typical IGBT Output Characteristics
60
600
VGE =0V
TJ =125°C
500
VGE = 0V,f =1 MHz
Cies
50
TJ =25°C
Coes
40
C (nF)
400
IF (A)
300
30
200
20
100
10
0
0
0.0
0.6
1.2
1.8
VF (V)
2.4
3.0
3.6
Fig.3 Typical Freewheeling Diode Characteristics
0
5
10
VCE (V)
15
20
25
Fig. 4 Typical Capacitance Characteristics
80
70
VCC =600V,VGE =+/-15V,
Rg =4.7 ohm,TJ =125°C
60
Eoff
Eon
60
50
Erec
Erec
E (mJ)
40
VCC = 600V,VGE = +/-15V,
IC = 300A ,TJ =125°C
70
Eoff
Eon
50
E (mJ)
4.8
40
30
30
20
20
10
0
10
0
60
120
180
240
300 360
IC (A)
420
480
540
600
Fig.5 Typical Switching Loss vs. Collector Current
4
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0
0
5
10
Rg ()
15
20
25
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5U300SD12B
Load Current (A)
360
Duty Cycle:50%
TJ =125°C
600
300
TC =80°C
500
240
Rg =4.7 ohm,VGE =15V
400
180
Vcc
120
I
60
0
IC (A)
Square Wave:
300
200
100
Diode as specified
1
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
Module
Chip
0
200
400
600
VCES (V)
800
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.18
0.08
ZthJC:IGBT
ZthJC:Didoe
0.15
0.06
ZthJC (K/W)
ZthJC (K/W)
0.12
0.09
0.04
0.06
0.02
0.03
0.00
0.001
0.01
t (s)
0.1
1
2
0.00
0.001
0.01
t ( s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5U300SD12B
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
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