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IRG5U300SD12B

IRG5U300SD12B

  • 厂商:

    EUPEC(英飞凌)

  • 封装:

    POWIR®62

  • 描述:

    MOD IGBT 1200V 300A POWIR 62

  • 数据手册
  • 价格&库存
IRG5U300SD12B 数据手册
IRG5K50P5K50PM06E IRG5U300SD12B VCES = 1200V IC = 300A at TC = 80°C Single Switch IGBT with Soft Recovery Diode POWIR 62™ Package tSC ≥ 10µsec VCE(ON) = 3.20V at IC = 300A Applications:  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating     Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 62™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U300SD12B POWIR 62™ Box 45 IRG5U300SD12B Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 300 A TC = 25°C 480 A ICM Pulse Collector Current TJ = 150°C 600 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 2170 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U300SD12B Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current RGint Internal Gate Resistance Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 3mA 5.3 6.0 V IC = 3mA, VCE = VGE 3.20 3.50 V TJ = 25°C V TJ = 125°C 3.80 IC = 300A, VGE = 15V 3 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 0.62 Ω Switching Characteristics of IGBT Parameter Min. Typ. 640 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 4000 Cies Input Capacitance 38.0 Coes Output Capacitance 2.76 Cres Reverse Transfer Capacitance 1.10 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 600 360 400 1780 1800 130 160 15.2 21.1 9.8 17.5 Max. Unit ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 300A, RG = 4.7Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f =1MHz, TJ = 25°C IC = 600A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U300SD12B Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 600 Diode Continuous Forward Current, TC = 80°C 300 Pulse Diode Current 600 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 170 240 16.4 32.8 10.2 18.4 Unit V A µC mJ Test Conditions TJ = 25°C TJ = 125°C IF = 300A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF=300A, di/dt=3000A/μs, Vrr = 600V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.057 °C/W RθJC Junction-to-Case (Freewheeling Diode) 0.140 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M6 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 310 Submit Datasheet Feedback g September 2, 2014 IRG5K50P5K50PM06E IRG5U300SD12B 600 600 VGE =15V TJ =125°C 540 VGE =17V VGE =15V 480 TJ =25°C 420 420 360 360 VGE =13V VGE =11V 300 300 VGE =9V IC (A) IC (A) 480 TJ =125°C 540 240 240 180 180 120 120 60 60 0 0.0 0.6 1.2 1.8 2.4 3.0 VCE (V) 3.6 4.2 4.8 0 0.0 5.4 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 3.0 3.6 VCE (V) 4.2 5.4 6.0 6.6 Fig.2 Typical IGBT Output Characteristics 60 600 VGE =0V TJ =125°C 500 VGE = 0V,f =1 MHz Cies 50 TJ =25°C Coes 40 C (nF) 400 IF (A) 300 30 200 20 100 10 0 0 0.0 0.6 1.2 1.8 VF (V) 2.4 3.0 3.6 Fig.3 Typical Freewheeling Diode Characteristics 0 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 80 70 VCC =600V,VGE =+/-15V, Rg =4.7 ohm,TJ =125°C 60 Eoff Eon 60 50 Erec Erec E (mJ) 40 VCC = 600V,VGE = +/-15V, IC = 300A ,TJ =125°C 70 Eoff Eon 50 E (mJ) 4.8 40 30 30 20 20 10 0 10 0 60 120 180 240 300 360 IC (A) 420 480 540 600 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 Rg () 15 20 25 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U300SD12B Load Current (A) 360 Duty Cycle:50% TJ =125°C 600 300 TC =80°C 500 240 Rg =4.7 ohm,VGE =15V 400 180 Vcc 120 I 60 0 IC (A) Square Wave: 300 200 100 Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency Module Chip 0 200 400 600 VCES (V) 800 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.18 0.08 ZthJC:IGBT ZthJC:Didoe 0.15 0.06 ZthJC (K/W) ZthJC (K/W) 0.12 0.09 0.04 0.06 0.02 0.03 0.00 0.001 0.01 t (s) 0.1 1 2 0.00 0.001 0.01 t ( s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U300SD12B Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014
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