IRG5K50P5K50PM06E
IRG5U400SD12B
VCES = 1200V
IC = 400A at TC = 80°C
Single Switch IGBT with Soft Recovery Diode
POWIR 62™ Package
tSC ≥ 10µsec
VCE(ON) = 3.20V at IC = 400A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 62™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5U400SD12B
POWIR 62™
Box
45
IRG5U400SD12B
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
400
A
TC = 25°C
600
A
ICM
Pulse Collector Current
TJ = 150°C
800
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
2500
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5U400SD12B
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
RGint
Internal Gate Resistance
Typ.
Max.
1200
4.5
Unit
Test Conditions
V
VGE = 0V, IC = 5mA
5.3
6.0
V
IC = 1 mA, VCE = VGE
3.20
3.50
V
TJ = 25°C
V
TJ = 125°C
3.80
IC = 400A,
VGE = 15V
5
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
0.62
Ω
Switching Characteristics of IGBT
Parameter
Min.
Typ.
405
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
4900
Cies
Input Capacitance
45.5
Coes
Output Capacitance
3.64
Cres
Reverse Transfer Capacitance
1.46
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
Max.
Unit
ns
390
150
ns
160
900
1000
130
ns
ns
160
21.2
35.0
17.2
25.2
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 400A,
RG = 3.3Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 800A,VCC = 960V,
VP =1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5U400SD12B
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
800
Diode Continuous Forward Current, TC = 80°C
400
Pulse Diode Current
800
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.00
2.70
2.20
170
Unit
V
A
360
26.8
µC
45.0
7.2
mJ
15.6
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 400A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=400A,
di/dt=3000A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.050
°C/W
RθJC
Junction-to-Case (Freewheeling Diode)
0.102
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M6
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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IRG5K50P5K50PM06E
IRG5U400SD12B
800
800
VGE =15V
TJ =125°C
720
640
480
VGE =13V
VGE =11V
400
400
VGE =9V
IC (A)
IC (A)
560
480
320
320
240
240
160
160
80
80
0
0.0
0.6
1.2
1.8
2.4 3.0
VCE (V)
3.6
4.2
4.8
5.4
0
0.0
6.0
VGE =0V
TJ =125°C
720
640
2.4 3.0
VCE (V)
3.6
4.2
4.8
5.4
6.0
VCE= 0 V,f=1MHz
Cies
Coes
60
50
C (nF)
480
400
320
40
30
240
20
160
10
80
0
0.0
0.6
1.2
1.8
VF (V)
2.4
3.0
0
3.6
Fig.3 Typical Diode Forward Characteristics
0
5
10
VCE (V)
15
20
25
Fig. 4 Typical Capacitance Characteristics
80
70
VCC =600V,VGE =+/-15V,
Rg = 3.3 ohm,TJ =125°C
50
Eoff
Eon
40
Erec
VCC =600V,VGE =+/-15V,
IC =400A,TJ =125°C
70
E (mJ)
60
E (mJ)
1.8
70
TJ =25°C
560
30
60
Eoff
Eon
50
Erec
40
30
20
20
10
10
0
80
160
240
320 400
IC (A)
480
560
640
720
800
Fig.5 Typical Switching Loss vs. Collector Current
4
1.2
80
800
0
0.6
Fig.2 Typical IGBT Output Characteristics
Fig.1 Typical IGBT Saturation Characteristics
IF (A)
VGE =17V
VGE =15V
640
TJ =25°C
560
TJ =125°C
720
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0
2
4
6
Rg ()
8
10
12
14
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5U400SD12B
480
Duty Cycle:50%
TJ =125°C
800
TC =80°C
Rg =3.3 ohm,VGE =15V
320
600
IC (A)
Load Current (A)
400
Square Wave:
240
Vcc
160
400
I
200
80
0
Module
Chip
Diode as specified
1
10
Frequency (KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
200
400
600
800
VCES (V)
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.06
0.12
ZthJC:Didoe
ZthJC:IGBT
0.09
ZthJC (K/W)
ZthJC (K/W)
0.04
0.06
0.02
0.03
0.00
0.001
0.01
t (s)
0.1
1
2
0.00
0.001
0.01
t ( s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5U400SD12B
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
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