IRG5K50P5K50PM06E
IRG5U50HF12A
IGBT Half-Bridge
POWIR 34™ Package
VCES = 1200V
IC = 50A at TC = 80⁰C
tSC ≥ 10µsec
VCE(ON) = 3.20V at IC = 50A
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 34™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5U50HF12A
POWIR 34™
Box
80
IRG5U50HF12A
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
50
A
TC = 25°C
85
A
ICM
Pulse Collector Current
TJ = 150°C
100
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
390
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
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IRG5K50P5K50PM06E
IRG5U50HF12A
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
Typ.
Max.
1200
4.5
Unit
Test Conditions
V
VGE = 0V, IC = 1mA
5.3
6.0
V
IC = 0.50mA, VCE = VGE
3.20
3.50
V
TJ = 25°C
V
TJ = 125°C
3.80
IC = 50A,
VGE = 15V
1
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
Max.
Unit
Switching Characteristics of IGBT
Parameter
Min.
Typ.
115
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
630
Cies
Input Capacitance
5.7
Coes
Output Capacitance
0.45
Cres
Reverse Transfer Capacitance
0.18
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
110
70
ns
ns
70
305
325
125
160
3.6
4.6
1.0
1.9
ns
ns
mJ
mJ
nC
nF
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TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 50A,
RG = 15Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f =1MHz, TJ = 25°C
IC = 100A,VCC = 960V,
VP = 1200V, RG = 4.7Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
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IRG5K50P5K50PM06E
IRG5U50HF12A
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
100
Diode Continuous Forward Current, TC = 80°C
50
Pulse Diode Current
100
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.00
2.70
2.20
40
Unit
V
A
47
3.1
µC
5.6
1.02
mJ
2.01
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 50A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF=50A,
di/dt=850A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.32
°C/W
RθJC
Junction-to-Case (Diode)
0.87
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M5
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
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165
g
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IRG5K50P5K50PM06E
IRG5U50HF12A
100
80
TJ =125°C
90
VGE =17V
VGE =15V
80
TJ =25°C
70
70
60
60
VGE =13V
VGE =11V
50
50
VGE =9V
IC (A)
IC (A)
100
VGE =15V
TJ =125°C
90
40
40
30
30
20
20
10
10
0
0
1
2
3
VCE (V)
4
5
0
6
Fig.1 Typical IGBT Saturation Characteristics
0
1
2
3
4
VCE (V)
5
7
Fig.2 Typical IGBT Output Characteristics
10
100
VGE =0V
TJ =125°C
90
80
VGE =0V,f =1MHz
Cies
8
TJ =25°C
Coes
70
6
C (nF)
60
IF (A)
6
50
40
4
30
2
20
10
0
0
0.5
1.0
1.5
2.0
VF (V)
2.5
3.0
3.5
0
4.0
Fig.3 Typical Diode Forward Characteristics
10
10
VCE (V)
15
20
25
VCC=600V,VGE=+/-15V,
IC=50A,TJ =125°C
8
Erec
Eoff
Eon
Erec
6
E (mJ)
E (mJ)
10
Eoff
Eon
6
5
Fig. 4 Typical Capacitance Characteristics
VCC=600V,VGE=+/-15V,
Rg=15 ohm,TJ =125°C
8
0
4
4
2
2
0
0
10
20
30
40
50
60
IC (A)
70
80
90
100
Fig.5 Typical Switching Loss vs. Collector Current
4
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0
0
5
10
15
20
25
30
Rg ()
35
40
45
50
Fig.6 Typical Switching Loss vs. Gate Resistance
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IRG5K50P5K50PM06E
IRG5U50HF12A
70
Duty Cycle:50%
TJ =125°C
60
TC =80°C
100
80
Rg=15 ohm,VGE =15V
50
Square Wave:
IC (A)
Load Current(A)
80
Vcc
40
30
60
40
I
20
0
20
Diode as specified
10
1
10
Frequency(KHz)
0
100
Fig.7 Typical Load Current vs. Frequency
Module
Chip
0
600
800
VCES (V)
1000
1200
1.0
ZthJC:Diode
ZthJC:IGBT
0.8
ZthJC (K/W)
0.3
ZthJC (K/W)
400
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.4
0.2
0.1
0.0
0.001
200
0.6
0.4
0.2
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t (s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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IRG5K50P5K50PM06E
IRG5U50HF12A
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
6
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