IRG5U50HH12E

IRG5K50P5K50PM06E IRG5U50HH12E IGBT H-Bridge POWIR ECO 2™ Package VCES = 1200V IC = 50A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 3.20V at IC = 50A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating DC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR ECO 2™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U50HH12E POWIR ECO 2™ Box 80 IRG5U50HH12E Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 50 A TC = 25°C 85 A ICM Pulse Collector Current TJ = 150°C 100 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 390 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U50HH12E Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage (Module Level) ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 1mA 5.3 6.0 V IC = 0.50mA, VCE = VGE 3.20 3.50 V TJ = 25°C V TJ = 125°C 3.80 IC = 50A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 115 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 630 Cies Input Capacitance 6.0 Coes Output Capacitance 0.50 Cres Reverse Transfer Capacitance 0.20 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 110 70 70 305 325 125 160 3.6 4.6 1.0 1.9 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 50A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 100A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U50HH12E Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 100 Diode Continuous Forward Current, TC = 80°C 50 Pulse Diode Current 100 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 40 Unit V A 50 3.0 µC 5.6 1.02 mJ 2.01 Test Conditions TJ = 25°C TJ = 125°C IF = 50A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝50A, di/dt=850A/μs, Vrr = 600V, VGE = -15V TJ = 125°C NTC-Thermistor Characteristic Values Parameter Typ. R25 TC =25°C R/R TC =100°C，R100 =481Ω P25 TC =25°C B25/50 B25/80 Max. 5 Unit kΩ ±5 % 50 mW R2=R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K R2=R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.32 °C/W RθJC Junction-to-Case (Diode) 0.87 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Mounting Screw: M6 G Weight 3 www.irf.com © 2014 International Rectifier 4.0 6.0 N·m 200 g Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U50HH12E 100 100 VGE =15V TJ =125°C 90 80 50 50 IC (A) 60 40 30 20 20 10 10 0.5 1.0 1.5 2.0 2.5 3.0 VCE (V) 3.5 4.0 4.5 5.0 0.6 1.2 1.8 2.4 3.0 3.6 VCE (V) 4.2 4.8 5.4 6.0 6.6 Fig.2 Typical IGBT Output Characteristics 100 9 90 VGE =0V TJ =125°C 80 VCE= 0 V,f=1MHz Cies 8 7 TJ =25°C 70 Coes 6 60 5 C (nF) IF (A) VGE =9V 0 0.0 5.5 Fig.1 Typical IGBT Saturation Characteristics 50 40 4 3 30 20 2 10 1 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 Fig.3 Typical Freewheeling Diode Characteristics 0 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 11 12 9 Eoff Eon 8 VCC =600V,VGE =+/-15V, IC =50A,TJ =125°C 10 VCC =600V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 10 Eoff Eon 8 7 Erec E (mJ) E (mJ) VGE =13V VGE =11V 40 30 0 VGE =17V VGE =15V 70 60 0 TJ =125°C 80 TJ =25°C 70 IC(A) 90 6 Erec 6 5 4 4 3 2 2 1 0 0 10 20 30 40 50 IC (A) 60 70 80 90 100 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 25 30 Rg ( 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U50HH12E 70 Duty Cycle:50% TJ =125°C 60 TC =80°C 100 80 Rg=15 ohm,VGE =15V 50 IC (A) Load Current (A) 80 Square Wave: 40 Vcc 30 60 40 I 20 20 10 0 Module Chip Diode as specified 1 10 Frequency (KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.4 1.0 ZthJC:IGBT 0.8 ZthJC (K/W) 0.3 ZthJC (K/W) 200 0.2 0.1 ZthJC:Diode 0.6 0.4 0.2 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 20 Rtyp 18 16 R (Kohm) 14 12 10 8 6 4 2 0 0 10 Fig.11 5 20 30 40 50 60 70 TC (°C) 80 90 100 110 120 NTC Temperature Characteristics www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U50HH12E Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014