IRG5U75HF06A

IRG5K50P5K50PM06E IRG5U75HF06A IGBT Half-Bridge POWIR 34™ Package VCES = 600V IC = 75A at TC = 80⁰C tSC ≥ 10µsec VCE(ON) = 2.60V at IC = 75A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating AC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR 34™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U75HF06A POWIR 34™ Box 80 IRG5U75HF06A Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 600 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 75 A TC = 25°C 100 A ICM Pulse Collector Current TJ = 150°C 150 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 330 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U75HF06A Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage 600 VGE(th) Gate Threshold Voltage 3.5 VCE(ON) Collector to Emitter Saturation Voltage ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. Unit Test Conditions V VGE = 0V, IC = 1mA 4.5 5.5 V IC = 0.25mA, VCE = VGE 2.60 2.90 V TJ = 25°C V TJ = 125°C 3.00 IC = 75A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 100 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 400 Cies Input Capacitance 4.3 Coes Output Capacitance 0.48 Cres Reverse Transfer Capacitance 0.20 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 100 75 80 260 600 100 125 0.89 1.18 0.62 1.79 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=300V, IC = 75A, RG = 20Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 150A,VCC = 480V, VP = 600V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 300V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U75HF06A Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 600 Diode Continuous Forward Current, TC = 25°C 150 Diode Continuous Forward Current, TC = 80°C 75 Pulse Diode Current 150 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 1.40 1.70 1.40 40 Unit V A 55 2.9 µC 4.7 0.51 mJ 1.00 Test Conditions TJ = 25°C TJ = 125°C IF = 75A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝75A, di/dt=1000A/μs, Vrr = 300V, VGE = -15V TJ = 125°C Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.38 °C/W RθJC Junction-to-Case (Diode) 1.05 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Power Terminals Screw: M5 3.0 5.0 N·m M Mounting Screw: M6 4.0 6.0 N·m G Weight 3 www.irf.com © 2014 International Rectifier 165 Submit Datasheet Feedback g October 1, 2014 IRG5K50P5K50PM06E IRG5U75HF06A 150 150 VGE =15V TJ =125°C 135 120 135 TJ =25°C 105 VGE =13V VGE =11V 90 IC (A) IC (A) VGE =17V VGE =15V 105 90 75 60 75 45 30 30 15 15 0 0.6 1.2 1.8 2.4 3.0 VCE (V) 3.6 4.2 4.8 VGE =9V 60 45 0 TJ =125°C 120 0 0.0 5.4 Fig.1 Typical IGBT Saturation Characteristics 0.6 1.2 1.8 2.4 3.0 VCE (V) 3.6 4.2 4.8 5.4 Fig.2 Typical IGBT Output Characteristics 150 8 VGE =0V TJ =125°C 135 120 VCE= 0 V,f=1MHz Cies TJ =25°C 105 Coes 6 C (nF) IF (A) 90 75 4 60 45 2 30 15 0 0.0 0.4 0.8 1.2 VF (V) 1.6 2.0 0 2.4 Fig.3 Typical Diode Forward Characteristics 5 10 VCE (V) 15 20 25 Fig. 4 Typical Capacitance Characteristics 5 4 VCC =300V,VGE =+/-15V, IC =75A,TJ =125°C VCC =300V,VGE =+/-15V, Rg =20 ohm,TJ =125°C 4 Eoff Eon 3 Eoff Eon 3 Erec E (mJ) E (mJ) 0 Erec 2 2 1 1 0 0 15 30 45 60 75 90 IC (A) 105 120 135 150 Fig.5 Typical Switching Loss vs. Collector Current 4 www.irf.com © 2014 International Rectifier 0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U75HF06A 105 Duty Cycle:50% TJ =125°C 90 TC =80°C 125 Rg=20 ohm,VGE =15V 100 60 Square Wave: IC (A) Load Current(A) 75 Vcc 45 I 30 15 0 150 75 50 1 Module Chip 25 Diode as specified 10 Frequency(KHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 100 200 300 400 VCES (V) 500 600 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.5 1.2 ZthJC:IGBT 1.0 0.4 ZthJC:Diode ZthJC (K/W) ZthJC (K/W) 0.8 0.3 0.2 0.1 0.0 0.001 0.6 0.4 0.2 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014 IRG5K50P5K50PM06E IRG5U75HF06A Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback October 1, 2014