IRG5K50P5K50PM06E
IRG5U75HF12A
IGBT Half-Bridge
POWIR 34™ Package
VCES = 1200V
IC = 75A at TC = 80⁰C
tSC ≥ 10μsec
VCE(ON) = 3.20V at IC = 75A
Applications˖
˖
x
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
x
x
x
x
x
Features
Benefits
Low VCE(ON) and Switching Losses
High Efficiency in a Wide Range of Applications
100% RBSOA Tested
10μsec Short Circuit Safe Operating Area
Rugged Transient Performance
POWIR 34™ Package
Industry Standard
Lead Free
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG5U75HF12A
POWIR 34™
Box
80
IRG5U75HF12A
Absolute Maximum Ratings of IGBT
VCES
Collector to Emitter Voltage
1200
V
VGES
Continuous Gate to Emitter Voltage
±20
V
IC
Continuous Collector Current
TC = 80°C
75
A
TC = 25°C
130
A
ICM
Pulse Collector Current
TJ = 150°C
150
A
PD
Maximum Power Dissipation (IGBT)
TC = 25°C, TJ = 150°C
540
W
TJ
Maximum IGBT Junction Temperature
150
°C
TJOP
Maximum Operating Junction Temperature Range
-40 to +150
°C
Tstg
Storage Temperature
-40 to +125
°C
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 1, 2014
IRG5K50P5K50PM06E
IRG5U75HF12A
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
Min.
V(BR)CES
Collector to Emitter Breakdown
Voltage
VGE(th)
Gate Threshold Voltage
VCE(ON)
Collector to Emitter Saturation Voltage
ICES
Collector to Emitter Leakage Current
IGES
Gate to Emitter Leakage Current
Typ.
Max.
1200
4.5
Unit
Test Conditions
V
VGE = 0V, IC = 1mA
5.3
6.0
V
IC = 0.75mA, VCE = VGE
3.20
3.50
V
TJ = 25°C
V
TJ = 125°C
3.80
IC = 75A,
VGE = 15V
1
mA
VGE = 0V, VCE = VCES
400
nA
VGE = ±20V, VCE = 0
Max.
Unit
Switching Characteristics of IGBT
Parameter
Min.
Typ.
160
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
Qg
Total Gate Charge
980
Cies
Input Capacitance
9.5
Coes
Output Capacitance
0.69
Cres
Reverse Transfer Capacitance
0.28
RBSOA
Reverse Bias Safe Operating Area
SCSOA
Short Circuit Safe Operating Area
2
150
90
100
440
470
120
160
5.7
6.8
1.9
3.2
ns
ns
ns
ns
mJ
mJ
nC
nF
www.irf.com © 2014 International Rectifier
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCC=600V,
IC = 75A,
RG = 15Ω,
VGE=±15V,
Inductive
Load
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VCE = 25V, VGE = 0V,
f ˙1MHz, TJ = 25°C
IC = 150A,VCC = 960V,
VP = 1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
Trapezoid
10
Test Conditions
μs
VCC = 600V, VGE = 15V,
TJ = 150°C
Submit Datasheet Feedback
October 1, 2014
IRG5K50P5K50PM06E
IRG5U75HF12A
Absolute Maximum Ratings of Freewheeling Diode
VRRM
IF
IFM
Repetitive Peak Reverse Voltage
1200
Diode Continuous Forward Current, TC = 25°C
150
Diode Continuous Forward Current, TC = 80°C
75
Pulse Diode Current
150
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
VF
Forward Voltage
Irr
Peak Reverse Recovery Current
Qrr
Reverse Recovery Charge
Erec
Reverse Recovery Energy
Typ.
Max.
2.20
2.70
2.40
43
Unit
V
A
60
4.1
μC
8.2
1.2
mJ
3.2
Test Conditions
TJ = 25°C
TJ = 125°C
IF = 75A ,
VGE = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IF˙75A,
di/dt=880A/μs,
Vrr = 600V,
VGE = -15V
TJ = 125°C
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
2500
V
Viso
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
Junction-to-Case (IGBT)
0.23
°C/W
RθJC
Junction-to-Case (Diode)
0.56
°C/W
RθCS
Case-To-Sink
(Conductive Grease Applied)
0.1
°C/W
M
Power Terminals Screw: M5
3.0
5.0
N·m
M
Mounting Screw: M6
4.0
6.0
N·m
G
Weight
3
www.irf.com © 2014 International Rectifier
165
Submit Datasheet Feedback
g
October 1, 2014
IRG5K50P5K50PM06E
IRG5U75HF12A
150
150
VGE =15V
TJ =25°C
135
120
90
VGE =13V
VGE =15V
75
75
VGE =17V
IC (A)
IC (A)
105
90
60
60
45
45
30
30
15
15
0
0.0
0.5
1.0
1.5
2.0
2.5 3.0
VCE (V)
3.5
4.0
4.5
5.0
0
5.5
Fig.1 Typical IGBT Saturation Characteristics
0
1
2
3
4
VCE (V)
5
6
7
Fig.2 Typical IGBT Output Characteristics
14
150
VGE =0V
TJ =25°C
135
120
VGE =0V,f =1MHz
Cies
12
TJ =125°C
105
Coes
10
C (nF)
90
IF (A)
VGE =9V
VGE =11V
120
TJ =125°C
105
TJ =125°C
135
75
60
45
8
6
4
30
2
15
0
0.0
0.4
0.8
1.2
1.6
2.0
VF (V)
2.4
2.8
3.2
0
3.6
Fig.3 Typical Diode Forward Characteristics
16
VCC = 600V,VGE = +/-15V,
Rg =15 ohm,TJ =125°C
14
5
Eoff
Eon
12
Eoff
Eon
10
Erec
10
Erec
E (mJ)
12
6
4
4
2
2
0
15
30
45
60
75
90
IC (A)
105
120
135
150
Fig.5 Typical Switching Loss vs. Collector Current
4
www.irf.com © 2014 International Rectifier
15
20
25
8
6
0
VCE (V)
VCC = 600V,VGE = +/-15V
IC = 75A,TJ =125°C
14
8
10
Fig. 4 Typical Capacitance Characteristics
16
E (mJ)
0
0
0
5
10
15
20
25
30
Rg (:)
35
40
45
50
Fig.6 Typical Switching Loss vs. Gate Resistance
Submit Datasheet Feedback
October 1, 2014
IRG5K50P5K50PM06E
IRG5U75HF12A
90
Duty Cylce:50%
TJ =125°C
75
150
TC =80°C
120
Rg=15 ohm,VGE =15V
Load Curent (A)
60
Vcc
15
90
60
I
30
0
IC (A)
Square Wave:
45
30
Diode as specified
1
Module
Chip
10
Frequency (kHz)
0
100
Fig.7 Typical Load Current vs. Frequency
0
200
400
600
800
VCES (V)
1000
1200
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.3
0.7
ZthJC:IGBT
0.6
ZthJC:Diode
0.5
ZthJC (K/W)
ZthJC (K/W)
0.2
0.1
0.4
0.3
0.2
0.1
0.0
0.001
0.01
t (s)
0.1
1
2
0.0
0.001
0.01
t (s)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 1, 2014
IRG5K50P5K50PM06E
IRG5U75HF12A
Internal Circuit:
Package Outline (Unit: mm):
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
Yes
RoHS Compliant
†
Not Applicable
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
6
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 1, 2014
