IRG5U75HH12E

IRG5K50P5K50PM06E IRG5U75HH12E IGBT H-Bridge POWIR ECO 2™ Package VCES = 1200V IC = 75A at TC = 80°C tSC ≥ 10µsec VCE(ON) = 3.20V at IC = 75A Applications：  Industrial Motor Drive Uninterruptible Power Supply Welding and Cutting Machine Switched Mode Power Supply Induction Heating DC Inverter Drive      Features Benefits Low VCE(ON) and Switching Losses High Efficiency in a Wide Range of Applications 100% RBSOA Tested 10µsec Short Circuit Safe Operating Area Rugged Transient Performance POWIR ECO 2™ Package Industry Standard Lead Free RoHS Compliant, Environmental Friendly Base Part Number Package Type Standard Pack Quantity Orderable Part Number IRG5U75HH12E POWIR ECO 2™ Box 80 IRG5U75HH12E Absolute Maximum Ratings of IGBT VCES Collector to Emitter Voltage 1200 V VGES Continuous Gate to Emitter Voltage ±20 V IC Continuous Collector Current TC = 80°C 75 A TC = 25°C 130 A ICM Pulse Collector Current TJ = 150°C 150 A PD Maximum Power Dissipation (IGBT) TC = 25°C, TJ = 150°C 540 W TJ Maximum IGBT Junction Temperature 150 °C TJOP Maximum Operating Junction Temperature Range -40 to +150 °C Tstg Storage Temperature -40 to +125 °C 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U75HH12E Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified) Parameter Min. V(BR)CES Collector to Emitter Breakdown Voltage VGE(th) Gate Threshold Voltage VCE(ON) Collector to Emitter Saturation Voltage (Module Level) ICES Collector to Emitter Leakage Current IGES Gate to Emitter Leakage Current Typ. Max. 1200 4.5 Unit Test Conditions V VGE = 0V, IC = 1mA 5.3 6.0 V IC = 0.75mA, VCE = VGE 3.20 3.50 V TJ = 25°C V TJ = 125°C 3.80 IC = 75A, VGE = 15V 1 mA VGE = 0V, VCE = VCES 400 nA VGE = ±20V, VCE = 0 Max. Unit Switching Characteristics of IGBT Parameter Min. Typ. 160 td(on) Turn-on Delay Time tr Rise Time td(off) Turn-off Delay Time tf Fall Time Eon Turn-on Switching Loss Eoff Turn-off Switching Loss Qg Total Gate Charge 980 Cies Input Capacitance 9.5 Coes Output Capacitance 0.70 Cres Reverse Transfer Capacitance 0.28 RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 2 150 90 100 440 470 120 160 5.7 6.8 1.9 3.2 ns ns ns ns mJ mJ nC nF www.irf.com © 2014 International Rectifier TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCC=600V, IC = 75A, RG = 15Ω, VGE=±15V, Inductive Load TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C VCE = 25V, VGE = 0V, f ＝1MHz, TJ = 25°C IC = 150A,VCC = 960V, VP =1200V, RG = 15Ω, VGE = +15V to 0V, TJ = 150°C Trapezoid 10 Test Conditions μs VCC = 600V, VGE = 15V, TJ = 150°C Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U75HH12E Absolute Maximum Ratings of Freewheeling Diode VRRM IF IFM Repetitive Peak Reverse Voltage 1200 Diode Continuous Forward Current, TC = 25°C 150 Diode Continuous Forward Current, TC = 80°C 75 Pulse Diode Current 150 V A A Electrical and Switching Characteristics of Freewheeling Diode Parameter VF Forward Voltage Irr Peak Reverse Recovery Current Qrr Reverse Recovery Charge Erec Reverse Recovery Energy Typ. Max. 2.20 2.70 2.40 43 Unit V A 60 4.1 µC 8.2 1.2 mJ 2.5 Test Conditions TJ = 25°C TJ = 125°C IF = 75A , VGE = 0V TJ = 25°C TJ = 125°C TJ = 25°C TJ = 125°C TJ = 25°C IF＝75A, di/dt=880A/μs, Vrr = 600V, VGE = -15V TJ = 125°C NTC-Thermistor Characteristic Values Parameter Typ. R25 TC =25°C R/R TC =100°C，R100 =481Ω P25 TC =25°C B25/50 B25/80 Max. 5 Unit kΩ ±5 % 50 mW R2=R25 exp[B25/50(1/T2-1/(298.15K))] 3380 K R2=R25 exp[B25/80(1/T2-1/(298.15K))] 3440 K Module Characteristics Parameter Min. Typ. Max. Unit 2500 V Viso Isolation Voltage (All Terminals Shorted), f = 50Hz, 1minute RθJC Junction-to-Case (IGBT) 0.23 °C/W RθJC Junction-to-Case (Diode) 0.56 °C/W RθCS Case-To-Sink (Conductive Grease Applied) 0.1 °C/W M Mounting Screw: M6 G Weight 3 www.irf.com © 2014 International Rectifier 4.0 6.0 N·m 200 g Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U75HH12E 150 150 VGE =15V TJ =125°C 135 120 TJ =125°C VGE =17V VGE =15V 120 TJ =25°C 105 105 90 90 VGE =13V VGE =11V 75 75 VGE =9V IC (A) IC (A) 135 60 60 45 45 30 30 15 15 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VCE (V) 3.5 4.0 4.5 5.0 0 5.5 1 2 3 4 VCE (V) 5 6 7 Fig.2 Typical IGBT Output Characteristics Fig.1 Typical IGBT Saturation Characteristics 14 150 VGE =0V TJ =125°C 135 120 VCE= 0 V,f=1MHz Cies 12 TJ =25°C 105 Coes 10 C (nF) 90 IF (A) 0 75 60 45 8 6 4 30 2 15 0 0.0 0.4 0.8 1.2 1.6 2.0 VF (V) 2.4 2.8 3.2 0 3.6 15 20 25 16 VCC =600V,VGE =+/-15V, Rg =15 ohm,TJ =125°C 14 10 10 E (mJ) 8 6 4 4 2 2 30 45 60 75 90 IC (A) 105 120 135 150 Fig.5 Typical Switching Loss vs. Collector Current www.irf.com © 2014 International Rectifier Erec 8 6 15 Eoff Eon 12 Erec 0 VCC =600V,VGE =+/-15V, IC =75A,TJ =125°C 14 Eoff Eon 12 E (mJ) 10 Fig. 4 Typical Capacitance Characteristics 16 4 5 VCE (V) Fig.3 Typical Freewheeling Diode Characteristics 0 0 0 0 5 10 15 20 25 30 Rg () 35 40 45 50 Fig.6 Typical Switching Loss vs. Gate Resistance Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U75HH12E 90 75 Duty Cylce:50% TJ =125°C 60 Rg=15 ohm,VGE =15V 150 120 IC (A) Load Curent (A) TC =80°C Square Wave: 45 Vcc 60 30 I 30 15 0 90 Diode as specified 1 Module Chip 10 Frequency (kHz) 0 100 Fig.7 Typical Load Current vs. Frequency 0 200 400 600 800 VCES (V) 1000 1200 Fig.8 Reverse Bias Safe Operation Area (RBSOA) 0.3 0.7 ZthJC:IGBT 0.6 ZthJC:Diode 0.5 ZthJC (K/W) ZthJC (K/W) 0.2 0.1 0.4 0.3 0.2 0.1 0.0 0.001 0.01 t (s) 0.1 1 2 0.0 0.001 0.01 t (s) 0.1 1 2 Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode) 20 Rtyp 18 16 R (Kohm) 14 12 10 8 6 4 2 0 0 10 Fig.11 5 20 30 40 50 60 70 TC (°C) 80 90 100 110 120 NTC Temperature Characteristics www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014 IRG5K50P5K50PM06E IRG5U75HH12E Internal Circuit: Package Outline (Unit: mm): Qualification Information† Qualification Level Industrial Moisture Sensitivity Level Yes RoHS Compliant † Not Applicable Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA To contact International Rectifier, please visit: http://www.irf.com/whoto-call/ 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback September 2, 2014