IRG7PG35UPBF

IRG7PG35UPbF IRG7PG35U-EPbF   INSULATED GATE BIPOLAR TRANSISTOR   Features  Low VCE (ON) trench IGBT technology  Low switching losses  Square RBSOA  100% of the parts tested for ILM  Positive VCE (ON) temperature co-efficient  Tight parameter distribution  Lead-free package Package Type IRG7PG35UPbF IRG7PG35U-EPbF TO-247AC TO-247AD TJ(MAX) = 175°C G E VCE(ON) typ. = 1.9V@ IC = 20A n-channel   C C G E GC G Gate C Collector IRG7PG35UPbF IRG7PG35U-EPbF     Max. 1000 55 35 60 80 ±30 210 105 -55 to +175 Units V A V W °C 300 (0.063 in.(1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance   © 2014 International Rectifier E Emitter Orderable Part Number 25 25 Mounting Torque, 6-32 or M3 Screw Parameter RθJC (IGBT) Junction-to-Case (IGBT)  RθCS Case-to-Sink (flat, greased surface) RθJA Junction-to-Ambient (typical socket mount) E IRG7PG35U-EPbF TO-247AD IRG7PG35UPbF TO-247AC Tube Tube Parameter Collector-to-Emitter Voltage VCES IC @ TC = 25°C Continuous Collector Current (Silicon Limited) IC @ TC = 100°C Continuous Collector Current (Silicon Limited) ICM Pulse Collector Current, VGE = 15V  ILM Clamped Inductive Load Current, VGE = 20V  VGE Continuous Gate-to-Emitter Voltage PD @ TC = 25°C Maximum Power Dissipation PD @ TC = 100°C Maximum Power Dissipation TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 sec. www.irf.com C Standard Pack Form Quantity Absolute Maximum Ratings 1 VCES = 1000V IC = 35A, TC = 100°C Benefits  High efficiency in a wide range of applications  Suitable for a wide range of switching frequencies due to low VCE(on) and low switching losses  Rugged transient performance for increased reliability  Excellent current sharing in parallel operation Applications  U.P.S.   Welding   Solar Inverter   Induction heating  Base part number   C Min. ––– ––– –––   Typ. ––– 0.24 ––– Submit Datasheet Feedback   Max. 0.70 ––– 40 Units °C/W April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 1000 — — 1.2 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — 1.9 VCE(on) Collector-to-Emitter Saturation Voltage — 2.3 — 2.4 VGE(th) Gate Threshold Voltage 3.0 — — -16 VGE(th)/TJ Gate Threshold Voltage temp coefficient. gfe Forward Transconductance — 22 ICES Collector-to-Emitter Leakage Current — 2.0 — 2000     IGES Gate-to-Emitter Leakage Current — — Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge — 85 Qge Gate-to-Emitter Charge — 15 Qgc Gate-to-Collector Charge — 35 Eon Turn-On Switching Loss — 1060 Eoff Turn-Off Switching Loss — 620 Etotal Total Switching Loss — 1680 td(on) Turn-On delay time — 30 tr Rise time — 15 td(off) Turn-Off delay time — 160 tf Fall time — 80 Eon Turn-On Switching Loss — 1880 Eoff Turn-Off Switching Loss — 1140 Etotal Total Switching Loss — 3020 td(on) Turn-On delay time — 25 tr Rise time — 20 td(off) Turn-Off delay time — 200 tf Fall time — 200 Cies Input Capacitance — 1940 Coes Output Capacitance — 60 Cres Reverse Transfer Capacitance — 40 RBSOA Reverse Bias Safe Operating Area Max. Units Conditions — V VGE = 0V, IC = 100µA  — V/°C VGE = 0V, IC = 1.0mA (25°C-150°C) 2.2 IC = 20A, VGE = 15V, TJ = 25°C — V   IC = 20A, VGE = 15V, TJ = 150°C — IC = 20A, VGE = 15V, TJ = 175°C 6.0 V VCE = VGE, IC = 600µA — mV/°C VCE = VGE, IC = 600µA (25°C-150°C) — S VCE = 50V, IC = 20A, PW = 30µs 100 µA VGE = 0V, VCE = 1000V — VGE = 0V, VCE = 1000V, TJ = 175°C ±100 nA VGE = ±30V Max. Units Conditions — IC = 20A nC  VGE = 15V — VCC = 600V —   — µJ IC = 20A, VCC = 600V, VGE = 15V — — RG = 10, L = 200µH, TJ = 25°C Energy losses include tail & diode — ns reverse recovery — Diode clamp the same as — IRG7PH35UDPbF — — µJ IC = 20A, VCC = 600V, VGE = 15V — — RG = 10, L = 200µH, TJ = 175°C Energy losses include tail & diode — ns reverse recovery — Diode clamp the same as — IRG7PH35UDPbF — — VGE = 0V pF VCC = 30V — f = 1.0Mhz — TJ = 175°C, IC = 80A FULL SQUARE VCC = 800V, Vp ≤ 1000V Rg = 10, VGE = +20V to 0V Notes:  VCC = 80% (VCES), VGE = 20V, RG = 10.  Pulse width limited by max. junction temperature.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  R is measured at TJ of approximately 90°C. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   45 For both: Duty cycle : 50% Tj = 150°C Tc = 100°C Gate drive as specified Power Dissipation = 70W 40 Load Current ( A ) 35 30 25 20 Square Wave: VCC 15 I 10 Diode as specified 5 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 60 250 50 200 Ptot (W) IC (A) 40 30 20 10 150 100 50 0 25 50 75 100 125 150 0 175 0 25 50 TC (°C) 75 100 125 150 175 TC (°C) Fig. 3 - Power Dissipation vs. Case Temperature Fig. 2 - Maximum DC Collector Current vs. Case Temperature 100 1000 10 µs 100 IC (A) IC (A) 10 100 µs 1 10 1ms DC 0.1 1 1 10 100 1000 10000 V CE (V) Fig. 4 - Forward SOA TC = 25°C, TJ ≤ 175°C; VGE = 15V 3 www.irf.com © 2014 International Rectifier 10 100 1000 10000 VCE (V) Fig. 5 - Reverse Bias SOA TJ = 175°C; VGE = 20V Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   80 80 VGE = 18V VGE = 15V 70 VGE = 12V VGE = 10V VGE = 8.0V 50 VGE = 18V VGE = 15V VGE = 12V 60 VGE = 10V VGE = 8.0V 50 ICE (A) 60 ICE (A) 70 40 40 30 30 20 20 10 10 0 0 0 2 4 6 8 10 0 2 4 VCE (V) 8 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 60 50 7 6 VCE (V) 70 ICE (A) 10 Fig. 7 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 30µs 80 40 30 5 ICE = 10A ICE = 20A 4 ICE = 40A 20 3 10 2 0 0 2 4 6 8 1 10 4 8 12 16 Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 8 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 30µs 8 7 7 6 6 ICE = 10A 5 5 ICE = 40A VCE (V) 8 ICE = 10A ICE = 20A ICE = 40A 4 20 VGE (V) VCE (V) VCE (V) 8 VCE (V) Fig. 6 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 30µs ICE = 20A 4 3 3 2 2 1 1 5 10 15 20 VGE (V) Fig. 10 - Typical VCE vs. VGE TJ = 25°C 4 6 www.irf.com © 2014 International Rectifier 5 10 15 20 VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   4000 70 3000 60 50 Energy (µJ) IC, Collector-to-Emitter Current (A) 80 40 TJ = 175°C 30 EON 2000 EOFF 20 1000 TJ = 25°C 10 0 0 4 5 6 7 8 9 10 0 10 20 Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 30µs 40 Fig. 13 - Typ. Energy Loss vs. IC TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V 3500 1000 tdOFF 3000 EON tF 100 2500 Energy (µJ) Swiching Time (ns) 30 IC (A) VGE, Gate-to-Emitter Voltage (V) tdON 2000 EOFF 1500 10 tR 1000 500 1 0 10 20 30 0 40 IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 175°C; L = 680µH; VCE = 600V, RG = 10; VGE = 15V 10000 20 40 60 80 100 RG () Fig. 15 - Typ. Energy Loss vs. RG TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V 10000 1000 Capacitance (pF) Swiching Time (ns) Cies tdOFF tF 100 1000 100 Coes tdON tR 10 0 Cres 10 20 40 60 80 100 0 100 200 300 400 500 600 RG () VCE (V) Fig. 16 - Typ. Switching Time vs. RG TJ = 175°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V Fig. 17 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF VGE(th), Gate Threshold Voltage (Normalized)   VGE, Gate-to-Emitter Voltage (V) 16 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 0 20 40 60 80 1.0 IC = 600µA 0.8 0.6 0.4 100 25 50 75 100 125 150 175 Q G, Total Gate Charge (nC) TJ , Temperature (°C) Fig. 18 - Typical Gate Charge vs. VGE ICE = 20A Fig. 19 - Typical Gate Threshold Voltage (Normalized) vs. Junction Temperature 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 0.05 J 0.02 R1 R1 J 1 R3 R3 1 2 2 3 3 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 1E-005 0.0001 R4 R4 C Ci= iRi Ci= iRi 0.01 0.01 R2 R2 4 4 C Ri (°C/W) i (sec) 0.017 0.000013 0.218 0.000141 0.299 0.002184 0.177 0.013107 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   L L VCC DUT 0 80 V + DUT - 1K Vclamped Rg Fig.C.T.2 - RBSOA Circuit Fig.C.T.1 - Gate Charge Circuit (turn-off) C force DIODE CLAMP L 100K D1 22K C sense DUT / DRIVER VCC 0.0075µ G force DUT Rg E sense E force Fig.C.T.3 - Switching Loss Circuit 7 www.irf.com © 2014 International Rectifier Fig.C.T.4 - BVCES Filter Circuit Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF tf 600 90% ICE V C E (V) 500 400 300 200 5% ICE 0 -100 -0.5 Eoff Loss 0.5 35 700 30 600 25 500 20 400 15 5% VCE 100 800 200 5 100 0 0 -5 1.5 Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.3 www.irf.com © 2014 International Rectifier 80 70 tr TEST CURRENT 60 50 40 90% test current 300 10 time(µs) 8 VCE (V) 700 40 I C E (A) 800 30 ICE (A)   20 10% test current 5% VCE 10 0 Eon Loss -100 -0.5 -10 -0.3 -0.1 0.1 0.3 0.5 time (µs) Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.3 Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014 IRG7PG35UPbF/IRG7PG35U-EPbF   Qualification Information† Industrial Qualification Level Moisture Sensitivity Level TO-247AC N/A TO-247AD Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 14, 2014